/********** Copyright 1991 Regents of the University of California. All rights reserved. Authors: 1987 Karti Mayaram, 1991 David Gates **********/ /* * Constants used by the numerical simulation routines */ /* Member of CIDER device simulator * Version: 1b1 */ #ifndef ngspice_NUMCONST_H #define ngspice_NUMCONST_H /* Mathematical Constants */ #ifdef PI #undef PI #endif #define PI 3.14159265358973923846264338327950288419716939937511 #define TWO_PI (2.0 * PI) #define ROOT_TWO 1.41421356237309504880168872420969807856967187537694 /* Basic Physical Constants */ #ifdef CHARGE #undef CHARGE #endif #define CHARGE 1.602191770e-19 /* C */ #define BOLTZMANN_CONSTANT 1.38062259e-23 /* J/oK */ #define VELOCITY_OF_LIGHT 2.997924562e8 /* CM/S */ #define ELECTRON_MASS 9.10955854e-31 /* kG */ #define ZERO_DEGREES_CELSIUS 273.15 /* oK */ #define EPS0 8.854e-14 /* F/CM */ /* Physical Constants of Silicon, GaAs, SiO2, Si3N4 */ #define EPS_REL_SI 11.7 /* ~EPS0 */ #define EPS_SI EPS0 * EPS_REL_SI /* F/CM */ #define EPS_REL_GA 10.9 /* ~EPS0 */ #define EPS_GA EPS0 * EPS_REL_GA /* F/CM */ #define EPS_REL_OX 3.9 /* ~EPS0 */ #define EPS_OX EPS0 * EPS_REL_OX /* F/CM */ #define EPS_REL_NI 7.5 /* ~EPS0 */ #define EPS_NI EPS0 * EPS_REL_NI /* F/CM */ /* Work Function, Affinity, Band & Bandgap Parameters */ #define AFFIN_SI 4.05 /* eV */ #define AFFIN_GA 4.07 /* eV */ #define AFFIN_OX 0.95 /* eV */ #define AFFIN_NI 3.10 /* eV */ #define PHI_METAL 4.10 /* eV */ #define PHI_ALUM 4.10 /* eV */ #define PHI_GOLD 4.75 /* eV */ #define EGAP300_SI 1.1245 /* eV */ #define EGAP300_GA 1.43 /* eV */ #define EGAP300_OX 9.00 /* eV */ #define EGAP300_NI 4.70 /* eV */ #define DGAPDT_SI 4.73e-4 /* eV/oK */ #define DGAPDT_GA 5.405e-4 /* eV/oK */ #define TREF_EG_SI 636.0 /* oK */ #define TREF_EG_GA 204.0 /* oK */ #define NCV_NOM 2.509e19 /* CM^-3 */ #define M_N_SI 1.447 /* ~ELECTRON_MASS */ #define M_P_SI 1.08 /* ~ELECTRON_MASS */ #define M_N_GA 7.05e-2 /* ~ELECTRON_MASS */ #define M_P_GA 0.427 /* ~ELECTRON_MASS */ /* Physical Model Parameters for Silicon and GaAs*/ /* N = electrons, P = holes */ /* Effective Richardson Constants (ref. PISCES) */ #define A_RICH_N_SI 110.0 /* A/CM^2/oK^2 */ #define A_RICH_P_SI 30.0 /* A/CM^2/oK^2 */ #define A_RICH_N_GA 6.2857 /* A/CM^2/oK^2 */ #define A_RICH_P_GA 105.0 /* A/CM^2/oK^2 */ /* Auger Recombination (ref. PISCES, SOLL90) */ #define C_AUG_N_SI 1.8e-31 /* CM^6/S */ #define C_AUG_P_SI 8.3e-32 /* CM^6/S */ #define C_AUG_N_GA 2.8e-31 /* CM^6/S */ #define C_AUG_P_GA 9.9e-32 /* CM^6/S */ /* SRH Recombination (ref. SOLL90) */ #define TAU0_N_SI 3.0e-5 /* S */ #define NSRH_N_SI 1.0e17 /* CM^-3 */ #define S_N_SI 1.0e4 /* CM/S */ #define TAU0_P_SI 1.0e-5 /* S */ #define NSRH_P_SI 1.0e17 /* CM^-3 */ #define S_P_SI 1.0e4 /* CM/S */ #define TAU0_N_GA 1.0e-7 /* S */ #define NSRH_N_GA 5.0e16 /* CM^-3 */ #define S_N_GA 1.0e4 /* CM/S */ #define TAU0_P_GA 1.0e-7 /* S */ #define NSRH_P_GA 5.0e16 /* CM^-3 */ #define S_P_GA 1.0e4 /* CM/S */ /* Bandgap Narrowing (ref. SOLL90) */ #define DGAPDN_N 1.2e-2 /* V */ #define NBGN_N 1.0e18 /* CM^-3 */ #define DGAPDN_P 9.7e-3 /* V */ #define NBGN_P 1.0e17 /* CM^-3 */ /* Mobility Models : */ /* Scharfetter-Gummel (SG) mobility (ref. SCHA69) */ #define SG_MUMAX_N 1400.0 #define SG_MUMIN_N 75.0 #define SG_NTREF_N 3.0e16 #define SG_NTEXP_N 0.5 #define SG_VSAT_N 1.036e7 #define SG_VWARM_N 4.9e6 #define SG_FIT_N 8.8 #define SG_MUMAX_P 480.0 #define SG_MUMIN_P 53.0 #define SG_NTREF_P 4.0e16 #define SG_NTEXP_P 0.5 #define SG_VSAT_P 1.2e7 #define SG_VWARM_P 2.928e6 #define SG_FIT_P 1.6 /* Caughey-Thomas (CT) mobility (ref. CAUG67) */ #define CT_MUMAX_N 1360.0 #define CT_MUMIN_N 92.0 #define CT_NTREF_N 1.3e17 #define CT_NTEXP_N 0.91 #define CT_VSAT_N 1.1e7 #define CT_MUMAX_P 520.0 #define CT_MUMIN_P 65.0 #define CT_NTREF_P 2.4e17 #define CT_NTEXP_P 0.61 #define CT_VSAT_P 9.5e6 /* Arora (AR) mobility (ref. AROR82) */ #define AR_MUMAX_N 1340.0 #define AR_MUMIN_N 88.0 #define AR_NTREF_N 1.26e17 #define AR_NTEXP_N 0.88 #define AR_VSAT_N 1.38e7 #define AR_MUMAX_P 461.3 #define AR_MUMIN_P 54.3 #define AR_NTREF_P 2.35e17 #define AR_NTEXP_P 0.88 #define AR_VSAT_P 9.0e6 /* Minority Carrier mobility (ref. SOLL90) */ /* * These parameters are flawed in that they don't match the majority * carrier mobility when the concentration drops to zero. * Carrier heating effects must be handled by a different model. */ #define UF_MUMAX_N 1412.0 #define UF_MUMIN_N 232.0 #define UF_NTREF_N 8.0e16 #define UF_NTEXP_N 0.9 #define UF_MUMAX_P 500.0 #define UF_MUMIN_P 130.0 #define UF_NTREF_P 8.0e17 #define UF_NTEXP_P 1.25 /* Temperature-Dependence of Arora mobility */ /* Applicable to all above models, but not necessarily accurate. */ #define TD_TREFVS_N 175.0 #define TD_TREFVS_P 312.0 #define TD_EXPMUMAX_N -2.33 #define TD_EXPMUMAX_P -2.23 #define TD_EXPMUMIN_N -0.57 #define TD_EXPMUMIN_P -0.57 #define TD_EXPNTREF_N 2.4 #define TD_EXPNTREF_P 2.4 #define TD_EXPNTEXP_N -0.146 #define TD_EXPNTEXP_P -0.146 /* * Inversion-layers are handled differently. They don't fit into the nice * pattern established above for bulk mobility. */ /* Surface mobility (ref. GATE90) */ #define MUS_N 991.0 /* CM^2/VS */ #define THETAA_N 2.67e-6 /* CM/V */ #define THETAB_N 4.18e-14 /* CM^2/V^2 */ #define SALPHA_N 1.0 / 2.0 /* --- */ #define SBETA_N 1.0 / 2.0 /* --- */ #define MUS_P 240.0 /* CM^2/VS */ #define THETAA_P 3.07e-6 /* CM/V */ #define THETAB_P 0.0 /* CM^2/V^2 */ #define SALPHA_P 2.0 / 3.0 /* --- */ #define SBETA_P 1.0 / 3.0 /* --- */ /* Gallium-Arsenide (GA) mobility (ref. PISCES) */ #define GA_MUMAX_N 5000.0 #define GA_MUMIN_N 50.0 #define GA_NTREF_N 1.0e17 #define GA_NTEXP_N 1.0 #define GA_VSAT_N 7.7e6 #define GA_VWARM_N 2.31e7 #define GA_MUMAX_P 400.0 #define GA_MUMIN_P 40.0 #define GA_NTREF_P 1.0e17 #define GA_NTEXP_P 1.0 #define GA_VSAT_P 7.7e6 #define GA_VWARM_P 2.31e7 /* END OF MOBILITY MODELS */ /* Freeze Out / Incomplete Ionization Parameters */ #define E_ARS_SI 0.049 /* eV (Arsenic) */ #define E_DON_SI 0.044 /* eV (Phosphorus) */ #define E_ACC_SI 0.045 /* eV (Boron) */ #define G_DON_SI 2.0 /* --- */ #define G_ACC_SI 4.0 /* --- */ #define E_DON_GA 0.005 /* eV */ #define E_ACC_GA 0.005 /* eV */ #define G_DON_GA 2.0 /* --- */ #define G_ACC_GA 2.0 /* --- */ /* Impact Ionization / Avalanche Generation Parameters */ /* These are for Silicon. Need better GaAs parameters. */ #define AII_N 7.03e5 #define BII_N 1.231e6 #define AII_P 1.582e6 #define BII_P 2.036e6 /* Default Surface-State / Fixed-Charge Density */ #define NSS 0.0 /* CM^-2 */ /* Default abstol for Poisson and Current-Continuity Equations */ #define DABSTOL1D 1.0e-12 /* --- */ #define DABSTOL2D 1.0e-8 /* --- */ #endif