// HICUM Level_0 Version_1.12: A Verilog-A description // (A simplified version of HICUM Level2 model for BJT) // ## It is modified after the first version of HICUM/L0 code ## // 12/08: Modifications for ngspice and adms2.2.7 DW // Changed VT0 in Vt0 to prevent conflict in compiled C version. // Made a temporary variable cjei_i for cjei output purpose only. // Minor code related changes // 03/08: Quick Fix: Default value of TFH has been changed from infinity to zero and modified the default value limits to [0, inf) to include zero // 12/06: Upper limit of FGEO is changed to infinity // 06/06: Thermal node "tnode" set as external // Flag FLSH introduced for controlling Self-heating calculation // all if-else blocks marked with begin-end // all series resistors and RTH are allowed to have a minimum value MIN_R // 07/06: QCJMOD deleted, QJMODF introduced along with with HICJQ // ddx() operator used with QJMOD and QJMODF wherever needed // aj is kept at 2.4 except BE depletion charge // Substrate transistor transfer current added. // Gmin added to (bi,ei) and (bi,ci) branches. // hyperbolic smoothing used in rbi computation to avoid devide-by-zero. // ********************************************************************************* // 06/06: Comment on NODE COLLAPSING: // Presently this verilog code permits a minimum of 1 milli-Ohm resistance for any // series resistance as well as for thermal resistance RTH. If any of the resistance // values drops below this minimum value, the corresponding nodes are shorted with // zero voltage contribution. We want the model compilers/simulators deal this // situation in such a manner that the corresponding node is COLLAPSED. // We expect that the simulators should permit current contribution statement // for any branch with resistance value more than (or equal to) 1 milli-Ohm without // any convergence problem. In fact, we wish NOT to have to use a voltage contribution // statement in our Verilog code, except as an indication for the model compiler/simulator // to interprete a zero branch voltage as NODE-COLLAPSING action. // ********************************************************************************** //Default simulator: Spectre `ifdef insideADMS `define P(p) (*p*) `define PGIVEN(p) $given(p) `define INITIAL_MODEL @(initial_model) `else `define P(p) `define PGIVEN(p) p `define INITIAL_MODEL @(initial_step) `endif //ADS //`include "constants.vams" //`include "disciplines.vams" //`include "compact.vams" //Spectre `include "constants.h" `include "discipline.h" `define NPN +1 `define PNP -1 `define VPT_thresh 1.0e2 `define EXPLIM 80.0 `define INF 1.0e6 `define TMAX 326.85 `define TMIN -100.0 `define MIN_R 0.001 //`define Gmin 1.0e-12 `define QCMODF(vj,cj0,vd,z,aj,cjf)\ if(cj0 > 0.0) begin\ vf = vd*(1.0-exp(-ln(aj)/z));\ xvf = (vf-vj)/VT;\ xvf2 = sqrt(xvf*xvf+1.921812);\ v_j = vf-VT*(xvf+xvf2)*0.5;\ dvj = 0.5*(xvf+xvf2)/xvf2;\ cjf = cj0*exp(-z*ln(1-v_j/vd))*dvj+aj*cj0*(1-dvj);\ end else begin\ cjf = 0.0;\ end // DEPLETION CHARGE CALCULATION // Hyperbolic smoothing used; no punch-through `define QJMODF(vj,cj0,vd,z,aj,qjf)\ if(cj0 > 0.0) begin\ vf = vd*(1.0-exp(-ln(aj)/z));\ xvf = (vf-vj)/VT;\ xvf2 = sqrt(xvf*xvf+1.921812);\ v_j = vf-VT*(xvf+xvf2)*0.5;\ x = 1.0-z;\ y = 1.0-exp(x*ln(1.0-v_j/vd));\ qjf = cj0*vd*y/x+aj*cj0*(vj-v_j);\ end else begin\ qjf = 0.0;\ end // Depletion Charge : with punch through `define QJMOD(vj,cj0,vd,z,vpt,aj,qjf)\ if(cj0 > 0.0) begin\ zr = z/4.0;\ vp = vpt-vd;\ vf = vd*(1.0-exp(-ln(aj)/z));\ cmax = aj*cj0;\ cr = cj0*exp((z-zr)*ln(vd/vpt));\ a = VT;\ ve = (vf-vj)/a;\ if (ve <= `EXPLIM) begin\ ex1 = exp(ve);\ ee1 = 1.0+ex1;\ vj1 = vf-a*ln(ee1);\ end else begin\ vj1 = vj;\ end\ a = 0.1*vp+4.0*VT;\ vr = (vp+vj1)/a;\ if (vr <= `EXPLIM) begin\ ex1 = exp(vr);\ ee1 = 1.0+ex1;\ vj2 = -vp+a*ln(ee1);\ end else begin\ vj2 = vj1;\ end\ vj4 = vj-vj1;\ ez = 1.0-z;\ ezr = 1.0-zr;\ vdj1 = ln(1.0-vj1/vd);\ vdj2 = ln(1.0-vj2/vd);\ qj1 = cj0*(1.0-exp(vdj2*ez))/ez;\ qj2 = cr*(1.0-exp(vdj1*ezr))/ezr;\ qj3 = cr*(1.0-exp(vdj2*ezr))/ezr;\ qjf = (qj1+qj2-qj3)*vd+cmax*vj4;\ end else begin\ qjf = 0.0;\ end // DEPLETION CHARGE CALCULATION SELECTOR: // Dependent on junction punch-through voltage // Important for collector related junctions `define HICJQ(vj,cj0,vd,z,vpt,qjf)\ if(vpt < `VPT_thresh) begin\ `QJMOD(vj,cj0,vd,z,vpt,2.4,qjf)\ end else begin\ `QJMODF(vj,cj0,vd,z,2.4,qjf)\ end //Temperature dependence of depletion capacitance parameters `define TMPHICJ(cj0,vd,z,vg,cj0_t,vd_t)\ arg = 0.5*vd/Vt0;\ vdj0 = 2*Vt0*ln(exp(arg)-exp(-arg));\ vdjt = vdj0*qtt0+vg*(1-qtt0)-mg*VT*ln_qtt0;\ vd_t = vdjt+2*VT*ln(0.5*(1+sqrt(1+4*exp(-vdjt/VT))));\ cj0_t = cj0*exp(z*ln(vd/vd_t)); //Limiting exponential `define LIN_EXP(le, arg)\ if(arg > 80) begin\ le = (1 + ((arg) - 80));\ arg = 80;\ end else begin\ le=1;\ end\ le = le*limexp(arg); // IDEAL DIODE (WITHOUT CAPACITANCE): // conductance not calculated // INPUT: // IS, IST : saturation currents (model parameter related) // UM1 : ideality factor // U : branch voltage // IMPLICIT INPUT: // VT : thermal voltage // OUTPUT: // Iz : diode current `define HICDIO(IS,IST,UM1,U,Iz)\ DIOY = U/(UM1*VT);\ if (IS > 0.0) begin\ if (DIOY > 80) begin\ le = (1 + ((DIOY) - 80));\ DIOY = 80;\ end else begin\ le = 1;\ end\ le = le*limexp(DIOY);\ Iz = IST*(le-1.0);\ if(DIOY <= -14.0) begin\ Iz = -IST;\ end\ end else begin\ Iz = 0.0;\ end module hic0_full (c,b,e,s,tnode); //Node definitions inout c,b,e,s,tnode; electrical c `P(info="external collector node"); electrical b `P(info="external base node"); electrical e `P(info="external emitter node"); electrical s `P(info="external substrate node"); electrical ci `P(info="internal collector node"); electrical bi `P(info="internal base node"); electrical ei `P(info="internal emitter node"); electrical tnode `P(info="local temperature rise node"); //Branch definitions branch (ci,c) br_cic_i; branch (ci,c) br_cic_v; branch (ei,e) br_eie_i; branch (ei,e) br_eie_v; branch (bi,ei) br_biei; branch (bi,ci) br_bici; branch (ci,ei) br_ciei; branch (b,bi) br_bbi_i; branch (b,bi) br_bbi_v; branch (b,e) br_be; branch (b,ci) br_bci; branch (b,s) br_bs; branch (s,ci) br_sci; branch (tnode ) br_sht; // // Parameter initialization with default values // Collector current parameter real is = 1.0e-16 from [0:1] `P(spice:name="is" info="(Modified) saturation current" m:factor="yes" unit="A"); parameter real mcf = 1.00 from (0:10] `P(spice:name="mcf" info="Non-ideality coefficient of forward collector current"); parameter real mcr = 1.00 from (0:10] `P(spice:name="mcr" info="Non-ideality coefficient of reverse collector current"); parameter real vef = `INF from (0:`INF] `P(spice:name="vef" info="forward Early voltage (normalization volt.)" unit="V" default:value="infinity"); parameter real iqf = `INF from (0:`INF] `P(spice:name="iqf" info="forward d.c. high-injection toll-off current" unit="A" m:factor="yes" default:value="infinity"); parameter real iqr = `INF from (0:`INF] `P(spice:name="iqr" info="inverse d.c. high-injection roll-off current" unit="A" m:factor="yes" default:value="infinity"); parameter real iqfh = `INF from (0:`INF] `P(spice:name="iqfh" info="high-injection correction current" unit="A" m:factor="yes"); parameter real tfh = 0.0 from [0:`INF) `P(spice:name="tfh" info="high-injection correction factor" test:value="2e-9" m:factor="yes"); // Base current parameter real ibes = 1e-18 from [0:1] `P(spice:name="ibes" info="BE saturation current" unit="A" m:factor="yes"); parameter real mbe = 1.0 from (0:10] `P(spice:name="mbe" info="BE non-ideality factor"); parameter real ires = 0.0 from [0:1] `P(spice:name="ires" info="BE recombination saturation current" test:value="1e-16" unit="A" m:factor="yes"); parameter real mre = 2.0 from (0:10] `P(spice:name="mre" info="BE recombination non-ideality factor"); parameter real ibcs = 0.0 from [0:1] `P(spice:name="ibcs" info="BC saturation current" test:value="1e-16" unit="A" m:factor="yes"); parameter real mbc = 1.0 from (0:10] `P(spice:name="mbc" info="BC non-ideality factor"); // BE depletion cap parameter real cje0 = 1.0e-20 from (0:`INF) `P(spice:name="cje0" info="Zero-bias BE depletion capacitance" unit="F" test:value="2e-14" m:factor="yes"); parameter real vde = 0.9 from (0:10] `P(spice:name="vde" info="BE built-in voltage" unit="V"); parameter real ze = 0.5 from (0:1] `P(spice:name="ze" info="BE exponent factor"); parameter real aje = 2.5 from [1:`INF) `P(spice:name="aje" info="Ratio of maximum to zero-bias value"); // Transit time parameter real t0 = 0.0 from [0:`INF) `P(spice:name="t0" info="low current transit time at Vbici=0" test:value="5e-12" unit="s"); parameter real dt0h = 0.0; // from [0:`INF) `P(spice:name="dt0h" info="Base width modulation contribution" test:value="2e-12" unit="s"); parameter real tbvl = 0.0 from [0:`INF) `P(spice:name="tbvl" info="SCR width modulation contribution" test:value="4e-12" unit="s"); parameter real tef0 = 0.0 from [0:`INF) `P(spice:name="tef0" info="Storage time in neutral emitter" test:value="1e-12" unit="s"); parameter real gte = 1.0 from (0:10] `P(spice:name="gte" info="Exponent factor for emmiter transit time"); parameter real thcs = 0.0 from [0:`INF) `P(spice:name="thcs" info="Saturation time at high current densities" test:value="3e-11" unit="s"); parameter real ahc = 0.1 from (0:10] `P(spice:name="ahc" info="Smoothing facor for current dependence"); parameter real tr = 0.0 from [0:`INF) `P(spice:name="tr" info="Storage time at inverse operation" unit="s"); // Critical current parameter real rci0 = 150 from (0:`INF) `P(spice:name="rci0" info="Low-field collector resistance under emitter" test:value="50" unit="Ohm" m:inverse_factor="yes"); parameter real vlim = 0.5 from (0:10] `P(spice:name="vlim" info="Voltage dividing ohmic and satur.region" unit="V"); parameter real vpt = 100 from (0:100] `P(spice:name="vpt" info="Punch-through voltage" test:value="10" unit="V" default="infinity"); parameter real vces = 0.1 from [0:1] `P(spice:name="vces" info="Saturation voltage" unit="V"); // BC depletion cap intern parameter real cjci0 = 1.0e-20 from (0:`INF) `P(spice:name="cjci0" info="Total zero-bias BC depletion capacitance" test:value="1e-15" unit="F" m:factor="yes"); parameter real vdci = 0.7 from (0:10] `P(spice:name="vdci" info="BC built-in voltage" test:value="0.7" unit="V"); parameter real zci = 0.333 from (0:1] `P(spice:name="zci" info="BC exponent factor" test:value="0.4"); parameter real vptci = 100 from (0:100] `P(spice:name="vptci" info="Punch-through voltage of BC junction" test:value="50" unit="V"); // BC depletion cap extern parameter real cjcx0 = 1.0e-20 from [0:`INF) `P(spice:name="cjcx0" info="Zero-bias external BC depletion capacitance" unit="F" test:value="1e-15" m:factor="yes"); parameter real vdcx = 0.7 from (0:10] `P(spice:name="vdcx" info="External BC built-in voltage" unit="V"); parameter real zcx = 0.333 from (0:1] `P(spice:name="zcx" info="External BC exponent factor"); parameter real vptcx = 100 from (0:100] `P(spice:name="vptcx" info="Punch-through voltage" unit="V" test:value="5.0" default="infinity"); parameter real fbc = 1.0 from [0:1] `P(spice:name="fbc" info="Split factor = Cjci0/Cjc0" test:value="0.5"); // Base resistance parameter real rbi0 = 0.0 from [0:`INF) `P(spice:name="rbi0" info="Internal base resistance at zero-bias" test:value="100" unit="Ohm" m:inverse_factor="yes"); parameter real vr0e = 2.5 from (0:`INF] `P(spice:name="vr0e" info="forward Early voltage (normalization volt.)" unit="V"); parameter real vr0c = `INF from (0:`INF] `P(spice:name="vr0c" info="forward Early voltage (normalization volt.)" unit="V" default="infinity" test:value="25.0"); parameter real fgeo = 0.656 from [0:`INF] `P(spice:name="fgeo" info="Geometry factor" test:value="0.73"); // Series resistances parameter real rbx = 0.0 from [0:`INF) `P(spice:name="rbx" info="External base series resistance" test:value="8.8" unit="Ohm" m:inverse_factor="yes"); parameter real rcx = 0.0 from [0:`INF) `P(spice:name="rcx" info="Emitter series resistance" test:value="12.5" unit="Ohm" m:inverse_factor="yes"); parameter real re = 0.0 from [0:`INF) `P(spice:name="re" info="External collector series resistance" test:value="9.16" unit="Ohm" m:inverse_factor="yes"); // Substrate transfer current, diode current and cap parameter real itss = 0.0 from [0:1.0] `P(spice:name="itss" info="Substrate transistor transfer saturation current" unit="A" test:value="1e-17" m:factor="yes"); parameter real msf = 1.0 from (0:10] `P(spice:name="msf" info="Substrate transistor transfer current non-ideality factor"); parameter real iscs = 0.0 from [0:1.0] `P(spice:name="iscs" info="SC saturation current" unit="A" test:value="1e-17" m:factor="yes"); parameter real msc = 1.0 from (0:10] `P(spice:name="msc" info="SC non-ideality factor"); parameter real cjs0 = 1.0e-20 from [0:`INF) `P(spice:name="cjs0" info="Zero-bias SC depletion capacitance" unit="F" test:value="1e-15" m:factor="yes"); parameter real vds = 0.3 from (0:10] `P(spice:name="vds" info="SC built-in voltage" unit="V"); parameter real zs = 0.3 from (0:1] `P(spice:name="zs" info="External SC exponent factor"); parameter real vpts = 100 from (0:100] `P(spice:name="vpts" info="SC punch-through voltage" unit="V" test:value="5.0" default="infinity"); // Parasitic caps parameter real cbcpar = 0.0 from [0:`INF) `P(spice:name="cbcpar" info="Collector-base isolation (overlap) capacitance" unit="F" m:factor="yes" test:value="1e-15"); parameter real cbepar = 0.0 from [0:`INF) `P(spice:name="cbepar" info="Emitter-base oxide capacitance" unit="F" m:factor="yes" test:value="2e-15"); // BC avalanche current parameter real eavl = 0.0 from [0:inf) `P(spice:name="eavl" info="Exponent factor" test:value="1e-14"); parameter real kavl = 0.0 from [0:`INF) `P(spice:name="kavl" info="Prefactor" test:value="1.19"); // Flicker noise parameter real kf = 0.0 from [0:`INF) `P(spice:name="kf" info="flicker noise coefficient" unit="M^(1-AF)"); parameter real af = 2.0 from (0:10] `P(spice:name="af" info="flicker noise exponent factor"); // Temperature dependance parameter real vgb = 1.2 from (0:10] `P(spice:name="vgb" info="Bandgap-voltage" unit="V" test:value="1.17"); parameter real vge = 1.17 from (0:10] `P(spice:name="vge" info="Effective emitter bandgap-voltage" unit="V" test:value="1.07"); parameter real vgc = 1.17 from (0:10] `P(spice:name="vgc" info="Effective collector bandgap-voltage" unit="V" test:value="1.14"); parameter real vgs = 1.17 from (0:10] `P(spice:name="vgs" info="Effective substrate bandgap-voltage" unit="V" test:value="1.17"); parameter real f1vg =-1.02377e-4 `P(spice:name="f1vg" info="Coefficient K1 in T-dependent bandgap equation" unit="V/K"); parameter real f2vg = 4.3215e-4 `P(spice:name="f2vg" info="Coefficient K2 in T-dependent bandgap equation" unit="V/K"); parameter real alt0 = 0.0 `P(spice:name="alt0" info="Frist-order TC of tf0" unit="1/K"); parameter real kt0 = 0.0 `P(spice:name="kt0" info="Second-order TC of tf0" unit="1/K^2"); parameter real zetact = 3.0 `P(spice:name="zetact" info="Exponent coefficient in transfer current temperature dependence" test:value="3.5"); parameter real zetabet = 3.5 `P(spice:name="zetabet" info="Exponent coefficient in BE junction current temperature dependence" test:value="4.0"); parameter real zetaci = 0.0 `P(spice:name="zetaci" info="TC of epi-collector diffusivity" test:value="1.6"); parameter real alvs = 0.0 `P(spice:name="alvs" info="Relative TC of satur.drift velocity" unit="1/K" test:value="1e-3"); parameter real alces = 0.0 `P(spice:name="alces" info="Relative TC of vces" unit="1/K" test:value="4e-4"); parameter real zetarbi = 0.0 `P(spice:name="zetarbi" info="TC of internal base resistance" test:value="0.6"); parameter real zetarbx = 0.0 `P(spice:name="zetarbx" info="TC of external base resistance" test:value="0.2"); parameter real zetarcx = 0.0 `P(spice:name="zetarcx" info="TC of external collector resistance" test:value="0.2"); parameter real zetare = 0.0 `P(spice:name="zetare" info="TC of emitter resistances"); parameter real alkav = 0.0 `P(spice:name="alkav" info="TC of avalanche prefactor" unit="1/K"); parameter real aleav = 0.0 `P(spice:name="aleav" info="TC of avalanche exponential factor" unit="1/K"); // Self-heating parameter integer flsh = 0 from [0:2] `P(spice:name="flsh" info="Flag for self-heating calculation" test:value="2"); parameter real rth = 0.0 from [0:`INF) `P(spice:name="rth" info="Thermal resistance" test:value="200.0" unit="K/W" m:inverse_factor="yes"); parameter real cth = 0.0 from [0:`INF) `P(spice:name="cth" info="Thermal capacitance" test:value="0.1" unit="Ws/K" m:factor="yes"); // Transistor type parameter integer npn = 1 from [0:1] `P(spice:isflag="yes" info="model type flag for npn" ); parameter integer pnp = 0 from [0:1] `P(info="model type flag for pnp" ); //Circuit simulator specific parameters parameter real tnom = 27 `P(spice:name="tnom" info="Temperature for which parameters are valid" unit="C"); parameter real dt = 0.0 `P(spice:name="dt" type="instance" info="Temperature change for particular transistor" unit="K"); // Declaration of the variables: begin real _circuit_gmin; real HICUMtype `P(spice:name="type" info="Device type from npn or pnp flags" unit="no" ask="yes"); // QCJMOD real cj0,vd,z,aj; real zr,vp; real cmax,cr,ve; real ee1,ez,ezr,vdj1,vdj2,ex1,vr,vj1,vj2,vj4; real qj1,qj2,qj3,qjf; //Cjfun *** VT, removed: BA real cj1,cj2,cj3,cjf; //cjtfun *** tnom,VT,mg,Vt0, removed: BA real vg; real vdj0,vdjt,cj0_t,vd_t,aj_t; // temperature and drift real VT,Tamb,Tdev,Tnom,dT,qtt0,ln_qtt0; real vde_t,vdci_t,vdcx_t,vds_t; real is_t,ires_t,ibes_t,ibcs_t; real itss_t,iscs_t,cje0_t,cjci0_t,cjcx0_t; real cjs0_t,rci0_t,vlim_t; real vces_t,thcs_t,tef0_t,rbi0_t; real rbx_t,rcx_t,re_t,t0_t,eavl_t,kavl_t; real aje_t; // bc charge and cap real qjci `P(ask="yes" info="B-C internal junction charge" unit="C"); real qjcx,qjcii,cjcii,qjcxi,qjciii; //cjcx real cjci0_t_ii,cjcx0_t_ii,cjcx0_t_i,v_j; // be junction real qjei `P(ask="yes" info="B-E internal junction charge" unit="C"); real cjei_i `P(ask="yes" info="B-E internal junction capacitance" unit="F"); // dw: adms2.2.7 problem real cjei,vf,vj,x,y,e1,e2; // transfer and internal base current real cc,qj_2,facl; real tf0,ickf,ickr,itfi,itri,qm; real qpt,itf,itr; real it `P(ask="yes" info="Transfer Current" unit="A"); real ibe,ire,ibi; real itfl,itrl,al,s3l,wl,d_qfh; // be diffusion charge real qf,qf0,dqfh,dqef; real dtef,dtfh,tf,ick; real vc,vceff,s3,w,a,tww; // bc diffusion charge real qr; // avalanche current source real v_bord,a_iavl,lncc; // base resistance real rb,eta,rbi,qje,Qz_nom,fQz; // substrate transistor, diode and cap real qjs,HSa,HSb,HSI_Tsu,HSUM; // self heating real pterm; // new for temperature dependence real mg,zetabci,zetasct,zetatef,avs; real k1,k2,vgbe,vgbc,vgsc,dvg; real xvf,xvf2,dvj,uvc,Vt0; // noise real flicker_Pwr,fourkt,twoq; // LIN_EXP real le,arg,le1,arg1,le2,arg2; //HICDIO real IS,IST,UM1,U,Iz,DIOY; // branch voltages real Vbci,Vbici,Vbiei,Vciei,Vsci,Veie,Vbbi,Vcic,Vbe,Vrth; //Output to be seen real ijbc `P(ask="yes" info="Base-collector diode current" unit="A"); real iavl `P(ask="yes" info="Avalanche current" unit="A"); real ijsc `P(ask="yes" info="Substrate-collector diode current" unit="A"); real Ieei `P(ask="yes" info="Current through external to internal emitter node" unit="A"); real Icci `P(ask="yes" info="Current through external to internal collector node" unit="A"); real Ibbi `P(ask="yes" info="Current through external to internal base node" unit="A"); real Ibici `P(ask="yes" info="Base-collector diode current minus the avalanche current" unit="A"); real ijbe `P(ask="yes" info="Base-emitter diode current" unit="A"); real Qbci,Qbe,Qbici,Qbiei; //Declaration of the variables: end // //======================== calculation of the transistor =================== // analog begin // assign voltages with regard to transistor type `INITIAL_MODEL begin if (`PGIVEN(npn)) HICUMtype = `NPN; else if (`PGIVEN(pnp)) HICUMtype = `PNP; else HICUMtype = `NPN; end Vbci = HICUMtype*V(br_bci); Vbici = HICUMtype*V(br_bici); Vbiei = HICUMtype*V(br_biei); Vciei = HICUMtype*V(br_ciei); Vsci = HICUMtype*V(br_sci); Veie = V(br_eie_v); Vcic = V(br_cic_v); Vbbi = V(br_bbi_v); Vbe = HICUMtype*V(br_be); Vrth = V(br_sht); // // temperature and resulting parameter drift // Tnom = tnom+273.15; Tamb = $temperature; Tdev = Tamb+dt+Vrth; // Limit temperature to avoid FPE's in equations if(Tdev < `TMIN + 273.15) begin Tdev = `TMIN + 273.15; end else begin if (Tdev > `TMAX + 273.15) begin Tdev = `TMAX + 273.15; end end Vt0 = `P_K*Tnom /`P_Q; VT = `P_K*Tdev /`P_Q; dT = Tdev-Tnom; qtt0 = Tdev/Tnom; ln_qtt0 = ln(qtt0); k1 = f1vg*Tnom; k2 = f2vg*Tnom+k1*ln(Tnom); avs = alvs*Tnom; vgbe = (vgb+vge)/2; vgbc = (vgb+vgc)/2; vgsc = (vgs+vgc)/2; mg = 3-`P_Q*f1vg/`P_K; zetabci = mg+1-zetaci; zetasct = mg-1.5; //+1-m_upS with m_upS=2.5 is_t = is*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1)); ibes_t = ibes*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1)); ires_t = ires*exp(0.5*mg*ln_qtt0+0.5*vgbe/VT*(qtt0-1)); ibcs_t = ibcs*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1)); itss_t = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1)); iscs_t = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1)); `TMPHICJ(cje0,vde,ze,vgbe,cje0_t,vde_t) aje_t = aje*vde_t/vde; `TMPHICJ(cjci0,vdci,zci,vgbc,cjci0_t,vdci_t) `TMPHICJ(cjcx0,vdcx,zcx,vgbc,cjcx0_t,vdcx_t) `TMPHICJ(cjs0,vds,zs,vgsc,cjs0_t,vds_t) rci0_t = rci0*exp(zetaci*ln_qtt0); vlim_t = vlim*exp((zetaci-avs)*ln_qtt0); vces_t = vces*(1+alces*dT); t0_t = t0*(1+alt0*dT+kt0*dT*dT); thcs_t = thcs*exp((zetaci-1)*ln_qtt0); zetatef = zetabet-zetact-0.5; dvg = vgb-vge; tef0_t = tef0*exp(zetatef*ln_qtt0-dvg/VT*(qtt0-1)); rbx_t = rbx*exp(zetarbx*ln_qtt0); rcx_t = rcx*exp(zetarcx*ln_qtt0); rbi0_t = rbi0*exp(zetarbi*ln_qtt0); re_t = re*exp(zetare*ln_qtt0); eavl_t = eavl*exp(aleav*dT); kavl_t = kavl*exp(alkav*dT); // // Calculation of intrinsic transistor elements // // BC charge and cap (internal and external) // The cjcx0 value is used to switch between one (cjcx0=0) and two bc parameter sets // 1. For one parameter set only the internal bc set is partitioned by fbc // 2. For two independent sets only the external set is partitioned by fbc if (cjcx0_t==0) begin cjci0_t_ii = cjci0_t*fbc; // zero bias internal portion qjcxi = 0; cjcx0_t_i = cjci0_t*(1-fbc); // zero bias external portion `HICJQ(Vbci,cjcx0_t_i,vdci_t,zci,vptci,qjcx) end else begin cjci0_t_ii = cjci0_t; // zero bias internal portion cjcx0_t_ii = cjcx0_t*fbc; `HICJQ(Vbici,cjcx0_t_ii,vdcx_t,zcx,vptcx,qjcxi) cjcx0_t_i = cjcx0_t*(1-fbc); // zero bias external portion `HICJQ(Vbci,cjcx0_t_i,vdcx_t,zcx,vptcx,qjcx) end `HICJQ(Vbici,cjci0_t_ii,vdci_t,zci,vptci,qjci) qjcii = qjci+qjcxi; //Internal bc cap without punch through for cc //`HICJQ(Vbici,cjci0_t_ii,vdci_t,zci,100,qjciii) `QCMODF(Vbici,cjci0_t_ii,vdci_t,zci,2.4,cjcii) //cjcii = ddx(qjciii,V(bi)); //Internal be cap and charge `QJMODF(Vbiei,cje0_t,vde_t,ze,aje_t,qjei) cjei = ddx(qjei,V(bi)); cjei_i = cjei; // dw: adms2.2.7 problem // Critical current: ick vc = Vciei-vces_t; uvc = vc/VT-1; vceff = VT*(1+0.5*(uvc+sqrt(uvc*uvc+1.921812))); x = (vceff-vlim_t)/vpt; ick = vceff*(1+0.5*(x+sqrt(x*x+1e-3)))/rci0_t/sqrt(1+vceff*vceff/vlim_t/vlim_t); // Transfer current // Normalized BC cap and carge cc = cjci0_t_ii/cjcii; qjci = qjci/cjci0_t_ii; qj_2 = (1+qjci/vef)/2; // Minority charge transit time tf0 = t0_t+dt0h*(cc-1)+tbvl*(1/cc-1); // DC critical currents ickf = iqf; ickr = iqr; // Ideal transfer currents arg1 = Vbiei/(mcf*VT); `LIN_EXP(le1,arg1) itfi=is_t*le1; arg2 = Vbici/(mcr*VT); `LIN_EXP(le2,arg2) itri=is_t*le2; // Normalized minority charge qm = (itfi/ickf+itri/ickr); // Normalized total hole charge qpt = qj_2+sqrt((qj_2)*(qj_2)+qm); if (qpt<=1e-20) begin qpt=1e-20; end // Low transfer current itfl = itfi/qpt; itrl = itri/qpt; // Normalized injection width with low transfer current // and normalized charge component if (itfl<=1e-20) begin itfl = 1e-20; end al = 1-ick/itfl; s3l = sqrt(al*al+ahc); wl = (al+s3l)/(1+sqrt(1+ahc)); d_qfh = (wl*wl+tfh*itfl/ick)*itfl/iqfh; // Transfer current facl = 1/(1+d_qfh/qpt); itf = itfl*facl; itr = itrl*facl; if (itf<=1e-20) begin itf = 1e-20; end it = itf-itr; // BE diffusion charge // Calculation of low-current portion qf0 = tf0*itf; // Current dependent component a = 1-ick/itf; s3 = sqrt(a*a+ahc); w = (a+s3)/(1+sqrt(1+ahc)); tww = thcs_t*w*w; dqfh = tww*itf; dtfh = tww*(1+2*ick/itf/s3); // Emitter component dtef = tef0_t*exp(gte*ln(itf/ick)); dqef = dtef*itf/(gte+1.0); // Total minority charge and transit time qf = qf0+dqef+dqfh; tf = tf0+dtfh+dtef; // BC diffusion charge qr = tr*itr; // Internal base current // BE diode `HICDIO(ibes,ibes_t,mbe,Vbiei,ibe) `HICDIO(ires,ires_t,mre,Vbiei,ire) ijbe = ibe+ire; // BC diode `HICDIO(ibcs,ibcs_t,mbc,Vbici,ijbc) // Total base current ibi = ijbe+ijbc; // Avalanche current if (Vbici < 0) begin : HICAVL v_bord = eavl_t*vdci_t; if (vdci_t-Vbici>v_bord) begin a_iavl = kavl_t/vdci_t*exp(-cc); iavl = itf*a_iavl*(v_bord+(1+cc)*(vdci_t-Vbici-v_bord)); end else begin lncc = ln(1/cc); iavl = kavl_t*itf*exp(-1/zci*lncc-eavl_t*exp((1/zci-1)*lncc)); end end else begin iavl = 0; end // // Additional elements for external transistor // // Base resistance if(rbi0_t > 0.0) begin : HICRBI // Conductivity modulation with hyperbolic smoothing qje = qjei/cje0_t; Qz_nom = 1+qje/vr0e+qjci/vr0c+itf/ickf+itr/ickr; fQz = 0.5*(Qz_nom+sqrt(Qz_nom*Qz_nom+0.01));; rbi = rbi0_t/fQz; // Emitter current crowding if (ibi > 0.0) begin eta = fgeo*rbi*ibi/VT; if (eta < 1e-6) begin rbi = rbi*(1-0.5*eta); end else begin rbi = rbi*ln(eta+1)/eta; end end end else begin rbi = 0.0; end // Total base resistance rb = rbi+rbx_t; // Parasitic substrate transistor transfer current if(itss > 0.0) begin : Sub_Transfer HSUM = msf*VT; HSa = limexp(Vbci/HSUM); HSb = limexp(Vsci/HSUM); HSI_Tsu = itss_t*(HSa-HSb); end else begin HSI_Tsu = 0.0; end // Substrate diode and cap and charge `HICDIO(iscs,iscs_t,msc,Vsci,ijsc) `HICJQ(Vsci,cjs0_t,vds_t,zs,vpts,qjs) // Self heating if (flsh == 1 && rth >= `MIN_R) begin pterm = it*Vciei+iavl*(vdci_t-Vbici); end else if (flsh == 2 && rth >= `MIN_R) begin pterm = Vciei*it + (vdci_t-Vbici)*iavl + ijbe*Vbiei + ijbc*Vbici + ijsc*Vsci; if (rb >= `MIN_R) begin pterm = pterm + Vbbi*Vbbi/rb; end if (re_t >= `MIN_R) begin pterm = pterm + Veie*Veie/re_t; end if (rcx_t >= `MIN_R) begin pterm = pterm + Vcic*Vcic/rcx_t; end end // // Compute branch sources // Ibici = ijbc - iavl; Qbci = cbcpar*Vbci; Qbe = cbepar*Vbe; Qbici = qjcii+qr; Qbiei = qjei+qf; ijsc = HICUMtype*ijsc; qjs = HICUMtype*qjs; qjcx = HICUMtype*qjcx; Qbci = HICUMtype*Qbci; Qbe = HICUMtype*Qbe; Ibici = HICUMtype*Ibici; Qbici = HICUMtype*Qbici; ijbe = HICUMtype*ijbe; Qbiei = HICUMtype*Qbiei; it = HICUMtype*it; // // Define branch sources // I(br_biei) <+ _circuit_gmin*V(br_biei); I(br_bici) <+ _circuit_gmin*V(br_bici); I(br_bs) <+ HSI_Tsu; I(br_sci) <+ ijsc + _circuit_gmin*V(br_sci); //`P(spectre:gmin="add" spectre:pwl_passive="1e10"); I(br_sci) <+ ddt(qjs); I(br_bci) <+ ddt(qjcx); I(br_bci) <+ ddt(Qbci); I(br_be) <+ ddt(Qbe); if (re >= `MIN_R) begin I(br_eie_i) <+ Veie/re_t + _circuit_gmin*V(br_eie_i);//`P(spectre:gmin="add"); end else begin V(br_eie_v) <+ 0.0; end if (rcx >= `MIN_R) begin I(br_cic_i) <+ Vcic/rcx_t + _circuit_gmin*V(br_cic_i);//`P(spectre:gmin="add"); end else begin V(br_cic_v) <+ 0.0; end if (rbi0 >= `MIN_R || rbx >= `MIN_R) begin I(br_bbi_i) <+ Vbbi/rb + _circuit_gmin*V(br_bbi_i); //`P(spectre:gmin="add"); end else begin V(br_bbi_v) <+ 0.0; end I(br_bici) <+ Ibici + _circuit_gmin*V(br_bici); //`P(spectre:gmin="add" spectre:pwl_sat_current="IMAX" spectre:pwl_sat_cond="imax/0.025" spectre:pwl_rev_current="imax" spectre:pwl_rev_cond="IMAX/0.025"); I(br_bici) <+ ddt(Qbici); I(br_biei) <+ ijbe + _circuit_gmin*V(br_biei); //`P(spectre:gmin="add" spectre:pwl_fwd_current="IBEIS*exp(25.0)" spectre:pwl_fwd_node="bi" spectre:pwl_fwd_cond="IBEIS*exp(25.0)/0.025" spectre:pwl_sat_current="IMAX" spectre:pwl_sat_cond="IMAX/0.025" spectre:pwl_passive="1e10"); I(br_biei) <+ ddt(Qbiei); I(br_ciei) <+ it `P(spectre:pwl_fwd_current="IS*exp(25.0)" spectre:pwl_fwd_node="bi" spectre:pwl_fwd_cond="IS*exp(25.0)/0.025" spectre:pwl_rev_current="IMAX" spectre:pwl_rev_cond="IMAX/0.025" spectre:pwl_passive="1e10"); // Following code is an intermediate solution: // ****************************************** if(flsh == 0 || rth < `MIN_R) begin I(br_sht) <+ Vrth/`MIN_R; end else begin I(br_sht) <+ Vrth/rth-pterm + _circuit_gmin*V(br_sht);//`P(spectre:gmin="add"); I(br_sht) <+ ddt(cth*Vrth); end // ****************************************** // For simulators having no problem with V(br_sht) <+ 0.0 // with external thermal node, follwing code may be used. // This external thermal node should remain accessible. // ******************************************** //if(flsh == 0 || rth < `MIN_R) begin // V(br_sht) <+ 0.0; //end else begin // I(br_sht) <+ Vrth/rth-pterm `P(spectre:gmin="add"); // I(br_sht) <+ ddt(cth*Vrth); //end // ******************************************** // Noise sources // Thermal noise fourkt = 4.0 * `P_K * Tdev; if(rbx >= `MIN_R || rbi0 >= `MIN_R) begin I(br_bbi_i) <+ white_noise(fourkt/rb); end if(rcx >= `MIN_R) begin I(br_cic_i) <+ white_noise(fourkt/rcx_t); end if(re >= `MIN_R) begin I(br_eie_i) <+ white_noise(fourkt/re_t); end // Shot noise twoq = 2.0 * `P_Q; I(br_biei) <+ white_noise(twoq*ijbe); I(br_ciei) <+ white_noise(twoq*it); // Flicker noise flicker_Pwr = kf*pow(ijbe,af); I(br_biei) <+ flicker_noise(flicker_Pwr,1.0); end // analog endmodule