`undef P `define P(txt) (*txt*) //====================================================================================== //====================================================================================== // Filename: PSP102_module.include //====================================================================================== //====================================================================================== // // (c) Copyright 2007, All Rights Reserved, NXP Semiconductors // // // Version: 102.1, April 2007 (Simkit 2.5) // //====================================================================================== //====================================================================================== // // Further information can be found in the file readme.txt // // Node definitions inout D, G, S, B; electrical D; electrical G; electrical S; electrical B; // Extra internal nodes for correlated drain and gate noise electrical NOI; electrical NOI2; // Extra branches for correlated drain and gate noise branch (NOI) NOII; branch (NOI) NOIR; branch (NOI) NOIC; `ifdef NQSmodel // Internal nodes for gate and bulk resistors electrical GP; electrical BP; electrical BI; electrical BS; electrical BD; // Internal nodes for spline collocation electrical INT1; electrical INT2; electrical INT3; electrical INT4; electrical INT5; electrical INT6; electrical INT7; electrical INT8; electrical INT9; branch(INT1) SPLINE1; branch(INT2) SPLINE2; branch(INT3) SPLINE3; branch(INT4) SPLINE4; branch(INT5) SPLINE5; branch(INT6) SPLINE6; branch(INT7) SPLINE7; branch(INT8) SPLINE8; branch(INT9) SPLINE9; branch(INT1) RES1; branch(INT2) RES2; branch(INT3) RES3; branch(INT4) RES4; branch(INT5) RES5; branch(INT6) RES6; branch(INT7) RES7; branch(INT8) RES8; branch(INT9) RES9; `endif // NQSmodel ////////////////////////// // // Model parameters // ////////////////////////// `ifdef LocalModel /////////////////////////////////////////////////// // PSP local model parameters /////////////////////////////////////////////////// // Special model parameters, some are also simulator global variables parameter real LEVEL = 102 `P(info="Model level" unit="" ); parameter real TYPE = 1.0 `from( -1.0,1.0 ) `P(info="Channel type parameter, +1=NMOS -1=PMOS" unit="" ); parameter real TR = 21.0 `from( -273.0,inf ) `P(info="nominal (reference) temperature" unit="C" ); // Switch parameters that turn models or effects on or off parameter real SWIGATE = 0.0 `from( 0.0,1.0 ) `P(info="Flag for gate current, 0=turn off IG" unit="" ); parameter real SWIMPACT = 0.0 `from( 0.0,1.0 ) `P(info="Flag for impact ionization current, 0=turn off II" unit="" ); parameter real SWGIDL = 0.0 `from( 0.0,1.0 ) `P(info="Flag for GIDL current, 0=turn off IGIDL" unit="" ); parameter real SWJUNCAP = 0.0 `from( 0.0,3.0 ) `P(info="Flag for juncap, 0=turn off juncap" unit="" ); parameter real QMC = 1.0 `from( 0.0,inf ) `P(info="Quantum-mechanical correction factor" unit="" ); // Process parameters parameter real VFB = -1.0 `P(info="Flatband voltage at TR" unit="V" ); parameter real STVFB = 5.0e-4 `P(info="Temperature dependence of VFB" unit="V/K" ); parameter real TOX = 2.0e-09 `from( 1e-10,inf ) `P(info="Gate oxide thickness" unit="m" ); parameter real NEFF = 5.0e+23 `from( 1e20,1e26 ) `P(info="Effective substrate doping" unit="m^-3" ); parameter real VNSUB = 0.0 `P(info="Effective doping bias-dependence parameter" unit="V" ); parameter real NSLP = 0.05 `from( 1e-3,inf ) `P(info="Effective doping bias-dependence parameter" unit="V" ); parameter real DNSUB = 0.0 `from( 0.0,1.0 ) `P(info="Effective doping bias-dependence parameter" unit="V^-1" ); parameter real DPHIB = 0.0 `P(info="Offset parameter for PHIB" unit="V" ); parameter real NP = 1.0e+26 `from( 0.0,inf ) `P(info="Gate poly-silicon doping" unit="m^-3" ); parameter real CT = 0.0 `from( 0.0,inf ) `P(info="Interface states factor" unit="" ); parameter real TOXOV = 2.0e-09 `from( 1e-10,inf ) `P(info="Overlap oxide thickness" unit="m" ); parameter real NOV = 5.0e+25 `from( 1e20,1e27 ) `P(info="Effective doping of overlap region" unit="m^-3" ); // DIBL parameters parameter real CF = 0.0 `from( 0.0,inf ) `P(info="DIBL-parameter" unit="V^-1" ); parameter real CFB = 0.0 `from( 0.0,1.0 ) `P(info="Back bias dependence of CF" unit="V^-1" ); // Mobility parameters parameter real BETN = 7e-2 `from( 0.0,inf ) `P(info="Channel aspect ratio times zero-field mobility" unit="m^2/V/s" ); parameter real STBET = 1.0 `P(info="Temperature dependence of BETN" unit="" ); parameter real MUE = 0.5 `from( 0.0,inf ) `P(info="Mobility reduction coefficient at TR" unit="m/V" ); parameter real STMUE = 0.0 `P(info="Temperature dependence of MUE" unit="" ); parameter real THEMU = 1.5 `from( 0.0,inf ) `P(info="Mobility reduction exponent at TR" unit="" ); parameter real STTHEMU = 1.5 `P(info="Temperature dependence of THEMU" unit="" ); parameter real CS = 0.0 `from( 0.0,inf ) `P(info="Coulomb scattering parameter at TR" unit="" ); parameter real STCS = 0.0 `P(info="Temperature dependence of CS" unit="" ); parameter real XCOR = 0.0 `from( 0.0,inf ) `P(info="Non-universality factor" unit="V^-1" ); parameter real STXCOR = 0.0 `P(info="Temperature dependence of XCOR" unit="" ); parameter real FETA = 1.0 `from( 0.0,inf ) `P(info="Effective field parameter" unit="" ); // Series-resistance parameters (for resistance modeling as part of intrinsic mobility reduction) parameter real RS = 30 `from( 0.0,inf ) `P(info="Series resistance at TR" unit="Ohm" ); parameter real STRS = 1.0 `P(info="Temperature dependence of RS" unit="" ); parameter real RSB = 0.0 `from( -0.5,1.0 ) `P(info="Back-bias dependence of series resistance" unit="V^-1" ); parameter real RSG = 0.0 `from( -0.5,inf ) `P(info="Gate-bias dependence of series resistance" unit="V^-1" ); // Velocity saturation parameters parameter real THESAT = 1.0 `from( 0.0,inf ) `P(info="Velocity saturation parameter at TR" unit="V^-1" ); parameter real STTHESAT = 1.0 `P(info="Temperature dependence of THESAT" unit="" ); parameter real THESATB = 0.0 `from( -0.5,1.0 ) `P(info="Back-bias dependence of velocity saturation" unit="V^-1" ); parameter real THESATG = 0.0 `from( -0.5,inf ) `P(info="Gate-bias dependence of velocity saturation" unit="V^-1" ); // Saturation voltage parameters parameter real AX = 3.0 `from( 2.0,inf ) `P(info="Linear/saturation transition factor" unit="" ); // Channel length modulation (CLM) parameters parameter real ALP = 0.01 `from( 0.0,inf ) `P(info="CLM pre-factor" unit="" ); parameter real ALP1 = 0.00 `from( 0.0,inf ) `P(info="CLM enhancement factor above threshold" unit="V" ); parameter real ALP2 = 0.00 `from( 0.0,inf ) `P(info="CLM enhancement factor below threshold" unit="V^-1" ); parameter real VP = 0.05 `from( 1e-10,inf ) `P(info="CLM logarithm dependence factor" unit="V" ); // Impact ionization (II) parameters parameter real A1 = 1.0 `from( 0.0,inf ) `P(info="Impact-ionization pre-factor" unit="" ); parameter real A2 = 10.0 `from( 0.0,inf ) `P(info="Impact-ionization exponent at TR" unit="V" ); parameter real STA2 = 0.0 `P(info="Temperature dependence of A2" unit="V" ); parameter real A3 = 1.0 `from( 0.0,inf ) `P(info="Saturation-voltage dependence of impact-ionization" unit="" ); parameter real A4 = 0.0 `from( 0.0,inf ) `P(info="Back-bias dependence of impact-ionization" unit="V^-0.5" ); // Gate current parameters parameter real GCO = 0.0 `from( -10.0,10.0 ) `P(info="Gate tunnelling energy adjustment" unit="" ); parameter real IGINV = 0.0 `from( 0.0,inf ) `P(info="Gate channel current pre-factor" unit="A" ); parameter real IGOV = 0.0 `from( 0.0,inf ) `P(info="Gate overlap current pre-factor" unit="A" ); parameter real STIG = 2.0 `P(info="Temperature dependence of IGINV and IGOV" unit="" ); parameter real GC2 = 0.375 `from( 0.0,10.0 ) `P(info="Gate current slope factor" unit="" ); parameter real GC3 = 0.063 `from( -2.0,2.0 ) `P(info="Gate current curvature factor" unit="" ); parameter real CHIB = 3.1 `from( 1.0,inf ) `P(info="Tunnelling barrier height" unit="V" ); // Gate Induced Drain/Source Leakage (GIDL) parameters parameter real AGIDL = 0.0 `from( 0.0,inf ) `P(info="GIDL pre-factor" unit="A/V^3" ); parameter real BGIDL = 41.0 `from( 0.0,inf ) `P(info="GIDL probability factor at TR" unit="V" ); parameter real STBGIDL = 0.0 `P(info="Temperature dependence of BGIDL" unit="V/K" ); parameter real CGIDL = 0.0 `P(info="Back-bias dependence of GIDL" unit="" ); // Charge model parameters parameter real COX = 1.0e-14 `from( 0.0,inf ) `P(info="Oxide capacitance for intrinsic channel" unit="F" ); parameter real CGOV = 1.0e-15 `from( 0.0,inf ) `P(info="Oxide capacitance for gate-drain/source overlap" unit="F" ); parameter real CGBOV = 0.0 `from( 0.0,inf ) `P(info="Oxide capacitance for gate-bulk overlap" unit="F" ); parameter real CFR = 0.0 `from( 0.0,inf ) `P(info="Outer fringe capacitance" unit="F" ); // Noise parameters parameter real FNT = 1.0 `from( 0.0,inf ) `P(info="Thermal noise coefficient" unit="" ); parameter real NFA = 8.0e+22 `from( 0.0,inf ) `P(info="First coefficient of flicker noise" unit="V^-1/m^4" ); parameter real NFB = 3.0e+07 `from( 0.0,inf ) `P(info="Second coefficient of flicker noise" unit="V^-1/m^2" ); parameter real NFC = 0.0 `from( 0.0,inf ) `P(info="Third coefficient of flicker noise" unit="V^-1" ); `ifdef NQSmodel // NQS parameters parameter real SWNQS = 0.0 `from( 0.0,9.0 ) `P(info="Flag for NQS, 0=off, 1, 2, 3, 5, or 9=number of collocation points" unit="" ); parameter real MUNQS = 1.0 `from( 0.0,inf ) `P(info="Relative mobility for NQS modelling" ); parameter real RG = 1.0e-3 `from( 1.0e-6,inf ) `P(info="Gate resistance" unit="Ohm" ); parameter real RBULK = 1.0e-3 `from( 1.0e-6,inf ) `P(info="Bulk resistance between node BP and BI" unit="Ohm" ); parameter real RWELL = 1.0e-3 `from( 1.0e-6,inf ) `P(info="Well resistance between node BI and B" unit="Ohm" ); parameter real RJUNS = 1.0e-3 `from( 1.0e-6,inf ) `P(info="Source-side bulk resistance between node BI and BS" unit="Ohm" ); parameter real RJUND = 1.0e-3 `from( 1.0e-6,inf ) `P(info="Drain-side bulk resistance between node BI and BD" unit="Ohm" ); `endif // NQSmodel // JUNCAP Parameters parameter real TRJ = 21 `from(`TRJ_cliplow,inf) `P(info="reference temperature" unit="C" ); `include "JUNCAP200_parlist.include" // Other parameters parameter real DTA = 0.0 `P(info="Temperature offset w.r.t. ambient temperature" unit="K" ); // Instance parameters parameter real ABSOURCE = 1e-12 `from(`AB_cliplow,inf) `P(type="instance" info="Bottom area of source junction" unit="m^2" ); parameter real LSSOURCE = 1e-6 `from(`LS_cliplow,inf) `P(type="instance" info="STI-edge length of source junction" unit="m" ); parameter real LGSOURCE = 1e-6 `from(`LG_cliplow,inf) `P(type="instance" info="Gate-edge length of source junction" unit="m" ); parameter real ABDRAIN = 1e-12 `from(`AB_cliplow,inf) `P(type="instance" info="Bottom area of drain junction" unit="m^2" ); parameter real LSDRAIN = 1e-6 `from(`LS_cliplow,inf) `P(type="instance" info="STI-edge length of drain junction" unit="m" ); parameter real LGDRAIN = 1e-6 `from(`LG_cliplow,inf) `P(type="instance" info="Gate-edge length of drain junction" unit="m" ); parameter real AS = 1E-12 `from(`AB_cliplow,inf) `P(type="instance" info="Bottom area of source junction" unit="m^2" ); parameter real PS = 1E-6 `from(`LS_cliplow,inf) `P(type="instance" info="Perimeter of source junction" unit="m" ); parameter real AD = 1E-12 `from(`AB_cliplow,inf) `P(type="instance" info="Bottom area of drain junction" unit="m^2" ); parameter real PD = 1E-6 `from(`LS_cliplow,inf) `P(type="instance" info="Perimeter of drain junction" unit="m" ); parameter real JW = 1E-6 `from(`LG_cliplow,inf) `P(type="instance" info="Gate-edge length of source/drain junction" unit="m" ); parameter real MULT = 1.0 `from( 0.0,inf ) `P(type="instance" info="Number of devices in parallel" unit="" ); `else // LocalModel `ifdef Binning `include "PSP102_binpars.include" `else // Binning /////////////////////////////////////////////////// // PSP global model parameters /////////////////////////////////////////////////// // Special model parameters parameter real LEVEL = 1020 `P(info="Model level" unit="" ); parameter real TYPE = 1.0 `from( -1,1 ) `P(info="Channel type parameter, +1=NMOS -1=PMOS" unit="" ); // Reference Temperature parameter real TR = 21.0 `from( -273.0,inf ) `P(info="nominal (reference) temperature" unit="C" ); // Switch parameters that turn models or effects on or off parameter real SWIGATE = 0.0 `from( 0.0,1.0 ) `P(info="Flag for gate current, 0=turn off IG" unit="" ); parameter real SWIMPACT = 0.0 `from( 0.0,1.0 ) `P(info="Flag for impact ionization current, 0=turn off II" unit="" ); parameter real SWGIDL = 0.0 `from( 0.0,1.0 ) `P(info="Flag for GIDL current, 0=turn off IGIDL" unit="" ); parameter real SWJUNCAP = 0.0 `from( 0.0,3.0 ) `P(info="Flag for juncap, 0=turn off juncap" unit="" ); parameter real QMC = 1.0 `from( 0.0,inf ) `P(info="Quantum-mechanical correction factor" unit="" ); // Process Parameters parameter real LVARO = 0.0 `P(info="Geom. independent difference between actual and programmed gate length" unit="m" ); parameter real LVARL = 0.0 `P(info="Length dependence of LVAR" unit="" ); parameter real LVARW = 0.0 `P(info="Width dependence of LVAR" unit="" ); parameter real LAP = 0.0 `P(info="Effective channel length reduction per side" unit="m" ); parameter real WVARO = 0.0 `P(info="Geom. independent difference between actual and programmed field-oxide opening" unit="m" ); parameter real WVARL = 0.0 `P(info="Length dependence of WVAR" unit="" ); parameter real WVARW = 0.0 `P(info="Width dependence of WVAR" unit="" ); parameter real WOT = 0.0 `P(info="Effective channel width reduction per side" unit="m" ); parameter real DLQ = 0.0 `P(info="Effective channel length reduction for CV" unit="m" ); parameter real DWQ = 0.0 `P(info="Effective channel width reduction for CV" unit="m" ); parameter real VFBO = -1.0 `P(info="Geometry-independent flat-band voltage at TR" unit="V" ); parameter real VFBL = 0.0 `P(info="Length dependence of flat-band voltage" unit="" ); parameter real VFBW = 0.0 `P(info="Width dependence of flat-band voltage" unit="" ); parameter real VFBLW = 0.0 `P(info="Area dependence of flat-band voltage" unit="" ); parameter real STVFBO = 5e-4 `P(info="Geometry-independent temperature dependence of VFB" unit="V/K" ); parameter real STVFBL = 0.0 `P(info="Length dependence of temperature dependence of VFB" unit="" ); parameter real STVFBW = 0.0 `P(info="Width dependence of temperature dependence of VFB" unit="" ); parameter real STVFBLW = 0.0 `P(info="Area dependence of temperature dependence of VFB" unit="" ); parameter real TOXO = 2e-9 `from( 1e-10,inf ) `P(info="Gate oxide thickness" unit="m" ); parameter real NSUBO = 3e23 `from( 1e20,inf ) `P(info="Geometry independent substrate doping" unit="m^-3" ); parameter real NSUBW = 0.0 `P(info="Width dependence of background doping NSUBO due to segregation" unit="" ); parameter real WSEG = 1e-8 `from( 1e-10,inf ) `P(info="Char. length of segregation of background doping NSUBO" unit="m" ); parameter real NPCK = 1e24 `from( 0.0,inf ) `P(info="Pocket doping level" unit="m^-3" ); parameter real NPCKW = 0.0 `P(info="Width dependence of pocket doping NPCK due to segregation" unit="" ); parameter real WSEGP = 1e-8 `from( 1e-10,inf ) `P(info="Char. length of segregation of pocket doping NPCK" unit="m" ); parameter real LPCK = 1e-8 `from( 1e-10,inf ) `P(info="Char. length of lateral doping profile" unit="m" ); parameter real LPCKW = 0.0 `P(info="Width dependence of char. length of lateral doping profile" unit="" ); parameter real FOL1 = 0.0 `P(info="First length dependence coefficient for short channel body effect" unit="" ); parameter real FOL2 = 0.0 `P(info="Second length dependence coefficient for short channel body effect" unit="" ); parameter real VNSUBO = 0.0 `P(info="Effective doping bias-dependence parameter" unit="V" ); parameter real NSLPO = 0.05 `P(info="Effective doping bias-dependence parameter" unit="V" ); parameter real DNSUBO = 0.0 `P(info="Effective doping bias-dependence parameter" unit="V^-1" ); parameter real DPHIBO = 0.0 `P(info="Geometry independent offset of PHIB" unit="V" ); parameter real DPHIBL = 0.0 `P(info="Length dependence offset of PHIB" unit="V" ); parameter real DPHIBLEXP= 1.0 `P(info="Exponent for length dependence of offset of PHIB" unit="" ); parameter real DPHIBW = 0.0 `P(info="Width dependence of offset of PHIB" unit="" ); parameter real DPHIBLW = 0.0 `P(info="Area dependence of offset of PHIB" unit="" ); parameter real NPO = 1e26 `P(info="Geometry-independent gate poly-silicon doping" unit="m^-3" ); parameter real NPL = 0.0 `P(info="Length dependence of gate poly-silicon doping" unit="" ); parameter real CTO = 0.0 `P(info="Geometry-independent interface states factor" unit="" ); parameter real CTL = 0.0 `P(info="Length dependence of interface states factor" unit="" ); parameter real CTLEXP = 1.0 `P(info="Exponent for length dependence of interface states factor" unit="" ); parameter real CTW = 0.0 `P(info="Width dependence of interface states factor" unit="" ); parameter real CTLW = 0.0 `P(info="Area dependence of interface states factor" unit="" ); parameter real TOXOVO = 2e-9 `from( 1e-10,inf ) `P(info="Overlap oxide thickness" unit="m" ); parameter real LOV = 0 `from( 0.0,inf ) `P(info="Overlap length for gate/drain and gate/source overlap capacitance" unit="m" ); parameter real NOVO = 5e25 `P(info="Effective doping of overlap region" unit="m^-3" ); // DIBL Parameters parameter real CFL = 0.0 `P(info="Length dependence of DIBL-parameter" unit="V^-1" ); parameter real CFLEXP = 2.0 `P(info="Exponent for length dependence of CF" unit="" ); parameter real CFW = 0.0 `P(info="Width dependence of CF" unit="" ); parameter real CFBO = 0.0 `P(info="Back-bias dependence of CF" unit="V^-1" ); // Mobility Parameters parameter real UO = 5e-2 `P(info="Zero-field mobility at TR" unit="m^2/V/s" ); parameter real FBET1 = 0.0 `P(info="Relative mobility decrease due to first lateral profile" unit="" ); parameter real FBET1W = 0.0 `P(info="Width dependence of relative mobility decrease due to first lateral profile" unit="" ); parameter real LP1 = 1e-8 `from( 1e-10,inf ) `P(info="Mobility-related characteristic length of first lateral profile" unit="m" ); parameter real LP1W = 0.0 `P(info="Width dependence of mobility-related characteristic length of first lateral profile" unit="" ); parameter real FBET2 = 0.0 `P(info="Relative mobility decrease due to second lateral profile" unit="" ); parameter real LP2 = 1e-8 `from( 1e-10,inf ) `P(info="Mobility-related characteristic length of second lateral profile" unit="m" ); parameter real BETW1 = 0.0 `P(info="First higher-order width scaling coefficient of BETN" unit="" ); parameter real BETW2 = 0.0 `P(info="Second higher-order width scaling coefficient of BETN" unit="" ); parameter real WBET = 1e-9 `from( 1e-10,inf ) `P(info="Characteristic width for width scaling of BETN" unit="m" ); parameter real STBETO = 1.0 `P(info="Geometry independent temperature dependence of BETN" unit="" ); parameter real STBETL = 0.0 `P(info="Length dependence of temperature dependence of BETN" unit="" ); parameter real STBETW = 0.0 `P(info="Width dependence of temperature dependence of BETN" unit="" ); parameter real STBETLW = 0.0 `P(info="Area dependence of temperature dependence of BETN" unit="" ); parameter real MUEO = 0.5 `P(info="Geometry independent mobility reduction coefficient at TR" unit="m/V" ); parameter real MUEW = 0.0 `P(info="Width dependence of mobility reduction coefficient at TR" unit="" ); parameter real STMUEO = 0.0 `P(info="Temperature dependence of MUE" unit="" ); parameter real THEMUO = 1.5 `P(info="Mobility reduction exponent at TR" unit="" ); parameter real STTHEMUO = 1.5 `P(info="Temperature dependence of THEMU" unit="" ); parameter real CSO = 0.0 `P(info="Geometry independent coulomb scattering parameter at TR" unit="" ); parameter real CSL = 0.0 `P(info="Length dependence of CS" unit="" ); parameter real CSLEXP = 0.0 `P(info="Exponent for length dependence of CS" unit="" ); parameter real CSW = 0.0 `P(info="Width dependence of CS" unit="" ); parameter real CSLW = 0.0 `P(info="Area dependence of CS" unit="" ); parameter real STCSO = 0.0 `P(info="Temperature dependence of CS" unit="" ); parameter real XCORO = 0.0 `P(info="Geometry independent non-universality parameter" unit="V^-1" ); parameter real XCORL = 0.0 `P(info="Length dependence of non-universality parameter" unit="" ); parameter real XCORW = 0.0 `P(info="Width dependence of non-universality parameter" unit="" ); parameter real XCORLW = 0.0 `P(info="Area dependence of non-universality parameter" unit="" ); parameter real STXCORO = 0.0 `P(info="Temperature dependence of XCOR" unit="" ); parameter real FETAO = 1.0 `P(info="Effective field parameter" unit="" ); // Series Resistance parameter real RSW1 = 2.5e3 `P(info="Source/drain series resistance for 1 um wide channel at TR" unit="Ohm" ); parameter real RSW2 = 0.0 `P(info="Higher-order width scaling of RS" unit="" ); parameter real STRSO = 1.0 `P(info="Temperature dependence of RS" unit="" ); parameter real RSBO = 0.0 `P(info="Back-bias dependence of series resistance" unit="V^-1" ); parameter real RSGO = 0.0 `P(info="Gate-bias dependence of series resistance" unit="V^-1" ); // Velocity Saturation parameter real THESATO = 0.0 `P(info="Geometry independent velocity saturation parameter at TR" unit="V^-1" ); parameter real THESATL = 0.05 `P(info="Length dependence of THESAT" unit="V^-1" ); parameter real THESATLEXP= 1.0 `P(info="Exponent for length dependence of THESAT" unit="" ); parameter real THESATW = 0.0 `P(info="Width dependence of velocity saturation parameter" unit="" ); parameter real THESATLW = 0.0 `P(info="Area dependence of velocity saturation parameter" unit="" ); parameter real STTHESATO= 1.0 `P(info="Geometry independent temperature dependence of THESAT" unit="" ); parameter real STTHESATL= 0.0 `P(info="Length dependence of temperature dependence of THESAT" unit="" ); parameter real STTHESATW= 0.0 `P(info="Width dependence of temperature dependence of THESAT" unit="" ); parameter real STTHESATLW= 0.0 `P(info="Area dependence of temperature dependence of THESAT" unit="" ); parameter real THESATBO = 0.0 `P(info="Back-bias dependence of velocity saturation" unit="V^-1" ); parameter real THESATGO = 0.0 `P(info="Gate-bias dependence of velocity saturation" unit="V^-1" ); // Saturation Voltage parameter real AXO = 18 `P(info="Geometry independent linear/saturation transition factor" unit="" ); parameter real AXL = 0.4 `from( 0.0,inf ) `P(info="Length dependence of AX" unit="" ); // Channel Length Modulation parameter real ALPL = 5e-4 `P(info="Length dependence of ALP" unit="" ); parameter real ALPLEXP = 1.0 `P(info="Exponent for length dependence of ALP" unit="" ); parameter real ALPW = 0.0 `P(info="Width dependence of ALP" unit="" ); parameter real ALP1L1 = 0.0 `P(info="Length dependence of CLM enhancement factor above threshold" unit="V" ); parameter real ALP1LEXP = 0.5 `P(info="Exponent for length dependence of ALP1" unit="" ); parameter real ALP1L2 = 0.0 `from( 0.0,inf ) `P(info="Second_order length dependence of ALP1" unit="" ); parameter real ALP1W = 0.0 `P(info="Width dependence of ALP1" unit="" ); parameter real ALP2L1 = 0.0 `P(info="Length dependence of CLM enhancement factor below threshold" unit="V^-1" ); parameter real ALP2LEXP = 0.5 `P(info="Exponent for length dependence of ALP2" unit="" ); parameter real ALP2L2 = 0.0 `from( 0.0,inf ) `P(info="Second_order length dependence of ALP2" unit="" ); parameter real ALP2W = 0.0 `P(info="Width dependence of ALP2" unit="" ); parameter real VPO = 0.05 `P(info="CLM logarithmic dependence parameter" unit="V" ); // Weak-avalanche parameters parameter real A1O = 1.0 `P(info="Geometry independent impact-ionization pre-factor" unit="" ); parameter real A1L = 0.0 `P(info="Length dependence of A1" unit="" ); parameter real A1W = 0.0 `P(info="Width dependence of A1" unit="" ); parameter real A2O = 10 `P(info="Impact-ionization exponent at TR" unit="V" ); parameter real STA2O = 0.0 `P(info="Temperature dependence of A2" unit="V" ); parameter real A3O = 1.0 `P(info="Geometry independent saturation-voltage dependence of II" unit="" ); parameter real A3L = 0.0 `P(info="Length dependence of A3" unit="" ); parameter real A3W = 0.0 `P(info="Width dependence of A3" unit="" ); parameter real A4O = 0.0 `P(info="Geometry independent back-bias dependence of II" unit="V^-0.5" ); parameter real A4L = 0.0 `P(info="Length dependence of A4" unit="" ); parameter real A4W = 0.0 `P(info="Width dependence of A4" unit="" ); // Gate current parameters parameter real GCOO = 0.0 `P(info="Gate tunnelling energy adjustment" unit="" ); parameter real IGINVLW = 0.0 `P(info="Gate channel current pre-factor for 1 um^2 channel area" unit="A" ); parameter real IGOVW = 0.0 `P(info="Gate overlap current pre-factor for 1 um wide channel" unit="A" ); parameter real STIGO = 2.0 `P(info="Temperature dependence of IGINV and IGOV" unit="" ); parameter real GC2O = 0.375 `P(info="Gate current slope factor" unit="" ); parameter real GC3O = 0.063 `P(info="Gate current curvature factor" unit="" ); parameter real CHIBO = 3.1 `P(info="Tunnelling barrier height" unit="V" ); // Gate-induced drain leakage parameters parameter real AGIDLW = 0.0 `P(info="Width dependence of GIDL pre-factor" unit="A/V^3" ); parameter real BGIDLO = 41 `P(info="GIDL probability factor at TR" unit="V" ); parameter real STBGIDLO = 0.0 `P(info="Temperature dependence of BGIDL" unit="V/K" ); parameter real CGIDLO = 0.0 `P(info="Back-bias dependence of GIDL" unit="" ); // Charge Model Parameters parameter real CGBOVL = 0.0 `P(info="Oxide capacitance for gate-bulk overlap for 1 um^2 area" unit="F" ); parameter real CFRW = 0.0 `P(info="Outer fringe capacitance for 1 um wide channel" unit="F" ); // Noise Model Parameters parameter real FNTO = 1.0 `P(info="Thermal noise coefficient" unit="" ); parameter real NFALW = 8e22 `P(info="First coefficient of flicker noise for 1 um^2 channel area" unit="V^-1/m^4" ); parameter real NFBLW = 3e7 `P(info="Second coefficient of flicker noise for 1 um^2 channel area" unit="V^-1/m^2" ); parameter real NFCLW = 0.0 `P(info="Third coefficient of flicker noise for 1 um^2 channel area" unit="V^-1" ); // Other Parameters parameter real DTA = 0 `P(info="Temperature offset w.r.t. ambient circuit temperature" unit="K" ); `endif // Binning `ifdef NQSmodel // NQS parameters parameter real SWNQS = 0.0 `from( 0.0,9.0 ) `P(info="Flag for NQS, 0=off, 1, 2, 3, 5, or 9=number of collocation points" unit="" ); parameter real MUNQSO = 1.0 `P(info="Relative mobility for NQS modelling" ); parameter real RGO = 1.0e-3 `P(info="Gate resistance" ); parameter real RBULKO = 1.0e-3 `P(info="Bulk resistance between node BP and BI" unit="Ohm" ); parameter real RWELLO = 1.0e-3 `P(info="Well resistance between node BI and B" unit="Ohm" ); parameter real RJUNSO = 1.0e-3 `P(info="Source-side bulk resistance between node BI and BS" unit="Ohm" ); parameter real RJUNDO = 1.0e-3 `P(info="Drain-side bulk resistance between node BI and BD" unit="Ohm" ); `endif // NQSmodel // Stress Model Parameters parameter real SAREF = 1.0e-6 `from( 1e-9,inf ) `P(info="Reference distance beteen OD-edge to poly from one side" unit="m" ); parameter real SBREF = 1.0e-6 `from( 1e-9,inf ) `P(info="Reference distance beteen OD-edge to poly from other side" unit="m" ); parameter real WLOD = 0 `P(info="Width parameter" unit="m" ); parameter real KUO = 0 `P(info="Mobility degradation/enhancement coefficient" unit="m" ); parameter real KVSAT = 0 `from( -1.0,1.0 ) `P(info="Saturation velocity degradation/enhancement coefficient" unit="m" ); parameter real TKUO = 0 `P(info="Temperature dependence of KUO" unit="" ); parameter real LKUO = 0 `P(info="Length dependence of KUO" unit="m^LLODKUO" ); parameter real WKUO = 0 `P(info="Width dependence of KUO" unit="m^WLODKUO" ); parameter real PKUO = 0 `P(info="Cross-term dependence of KUO" unit="m^(LLODKUO+WLODKUO)" ); parameter real LLODKUO = 0 `from( 0.0,inf ) `P(info="Length parameter for UO stress effect" unit="" ); parameter real WLODKUO = 0 `from( 0.0,inf ) `P(info="Width parameter for UO stress effect" unit="" ); parameter real KVTHO = 0 `P(info="Threshold shift parameter" unit="Vm" ); parameter real LKVTHO = 0 `P(info="Length dependence of KVTHO" unit="m^LLODVTH" ); parameter real WKVTHO = 0 `P(info="Width dependence of KVTHO" unit="m^WLODVTH" ); parameter real PKVTHO = 0 `P(info="Cross-term dependence of KVTHO" unit="m^(LLODVTH+WLODVTH)" ); parameter real LLODVTH = 0 `from( 0.0,inf ) `P(info="Length parameter for VTH-stress effect" unit="" ); parameter real WLODVTH = 0 `from( 0.0,inf ) `P(info="Width parameter for VTH-stress effect" unit="" ); parameter real STETAO = 0 `P(info="eta0 shift factor related to VTHO change" unit="m" ); parameter real LODETAO = 1.0 `from( 0.0,inf ) `P(info="eta0 shift modifaction factor for stress effect" unit="" ); // JUNCAP Parameters parameter real TRJ = 21 `from(`TRJ_cliplow,inf) `P(info="reference temperature" unit="C"); `include "JUNCAP200_parlist.include" // Instance parameters parameter real L = 10e-6 `from( 1e-9,inf ) `P(type="instance" info="Design length" unit="m" ); parameter real W = 10e-6 `from( 1e-9,inf ) `P(type="instance" info="Design width" unit="m" ); parameter real SA = 0.0 `P(type="instance" info="Distance beteen OD-edge to poly from one side" unit="m" ); parameter real SB = 0.0 `P(type="instance" info="Distance beteen OD-edge to poly from other side" unit="m" ); parameter real ABSOURCE = 1E-12 `from(`AB_cliplow,inf) `P(type="instance" info="Bottom area of source junction" unit="m^2" ); parameter real LSSOURCE = 1E-6 `from(`LS_cliplow,inf) `P(type="instance" info="STI-edge length of source junction" unit="m" ); parameter real LGSOURCE = 1E-6 `from(`LG_cliplow,inf) `P(type="instance" info="Gate-edge length of source junction" unit="m" ); parameter real ABDRAIN = 1E-12 `from(`AB_cliplow,inf) `P(type="instance" info="Bottom area of drain junction" unit="m^2" ); parameter real LSDRAIN = 1E-6 `from(`LS_cliplow,inf) `P(type="instance" info="STI-edge length of drain junction" unit="m" ); parameter real LGDRAIN = 1E-6 `from(`LG_cliplow,inf) `P(type="instance" info="Gate-edge length of drain junction" unit="m" ); parameter real AS = 1E-12 `from(`AB_cliplow,inf) `P(type="instance" info="Bottom area of source junction" unit="m^2" ); parameter real PS = 1E-6 `from(`LS_cliplow,inf) `P(type="instance" info="Perimeter of source junction" unit="m" ); parameter real AD = 1E-12 `from(`AB_cliplow,inf) `P(type="instance" info="Bottom area of drain junction" unit="m^2" ); parameter real PD = 1E-6 `from(`LS_cliplow,inf) `P(type="instance" info="Perimeter of drain junction" unit="m" ); parameter real MULT = 1.0 `from( 0.0,inf ) `P(type="instance" info="Number of devices in parallel" unit="" ); ////////////////////////// // // Variables // ////////////////////////// // Variables for geometrical scaling rules real L_i, W_i, SA_i, SB_i; real LEN, WEN, iL, iW, delLPS, delWOD, LE, WE, iLE, iWE, Lcv, Wcv, LEcv, WEcv; `ifdef Binning // Auxiliary variables for binning-rules real iLEWE, iiLE, iiWE, iiLEWE, iiiLEWE; real iLEcv, iiLEcv, iiWEcv, iiLEWEcv, iiiLEWEcv; real iLcv, iiLcv, iiWcv, iiLWcv, iiiLWcv; `else // Binning // Intermediate variables used for geometry-scaling real NSUBO_i, WSEG_i, NPCK_i, WSEGP_i, LPCK_i, LOV_i; real LP1_i, LP2_i, WBET_i, AXL_i, ALP1L2_i, ALP2L2_i; real NSUB, AA, BB, NSUB0e, NPCKe, LPCKe; real FBET1e, LP1e, GPE, GWE, tmpx; `endif // Binning // List of local parameters real VFB, STVFB, TOX, NEFF, VNSUB, NSLP, DNSUB, DPHIB, NP, CT; real TOXOV, NOV, CF, CFB; real BETN, STBET, MUE, STMUE, THEMU, STTHEMU, CS, STCS, XCOR, STXCOR, FETA; real RS, STRS, RSB, RSG; real THESAT, STTHESAT, THESATB, THESATG; real AX; real ALP, ALP1, ALP2, VP; real A1, A2, STA2, A3, A4; real GCO, IGINV, IGOV, STIG, GC2, GC3, CHIB; real AGIDL, BGIDL, STBGIDL, CGIDL; real COX, CGOV, CGBOV, CFR; real FNT, NFA, NFB, NFC; `ifdef NQSmodel real MUNQS, RG, RBULK, RWELL, RJUNS, RJUND; `endif // NQSmodel // Variables for stress-model real SAREF_i, SBREF_i, KVSAT_i, LLODKUO_i, WLODKUO_i, LLODVTH_i, WLODVTH_i, LODETAO_i; real Invsa, Invsb, Invsaref, Invsbref, Kstressu0, rhobeta, rhobetaref, Kstressvth0; real temp0, templ, tempw, Lx, Wx; `endif // LocalModel // Variables used in electrical equations real VFB_i, STVFB_i, TOX_i, NEFF_i, VNSUB_i, NSLP_i, DNSUB_i, NP_i, QMC_i, CT_i, TOXOV_i, NOV_i; real CF_i, CFB_i, DPHIB_i; real BET_i, STBET_i, MUE_i, STMUE_i, THEMU_i, STTHEMU_i, CS_i, STCS_i, XCOR_i, STXCOR_i, FETA_i; real RS_i, THER_i, STRS_i, RSB_i, RSG_i; real THESAT_i, STTHESAT_i, THESATB_i, THESATG_i; real AX_i, ALP_i, ALP1_i, ALP2_i, VP_i; real A1_i, A2_i, STA2_i, A3_i, A4_i; real GCO_i, IGINV_i, IGOV_i, STIG_i, GC2_i, GC3_i, CHIB_i; real AGIDL_i, BGIDL_i, STBGIDL_i, CGIDL_i; real COX_i, CGOV_i, CGBOV_i, CFR_i; real FNT_i, NFA_i, NFB_i, NFC_i; real TR_i, MULT_i; real temp, temp1, temp2, tempM; real help; real TKR, TKD, TKD_sq, dT, rT, rTn; real phit, inv_phit, Eg, phibFac, CoxPrime, tox_sq; real delVg, CoxovPrime, GOV, GOV2; real np, kp, qq, qb0, dphibq, qlim2; real E_eff0, eta_mu, BCH, BOV, inv_CHIB, GCQ, Dch, Dov; real tf_bet, tf_mue, tf_cs, tf_xcor, tf_ther, tf_thesat, tf_ig; real xi_ov, inv_xi_ov, x_mrg_ov, x1, inv_xg1, Vdsat_lim; real nt, Cox_over_q; real phib, sqrt_phib, phix, aphi, bphi, phix1, phix2, G_0, phit1, inv_phit1, alpha_b; real inv_VP, inv_AX, Sfl_prefac; real Vgs, Vgd, Vds, Vsb, Vsbstar; real Vgb, Vgb1, Vgbstar, Vdb, Vdbstar, Vdsx, Vsbx; real Dnsub; real Igidl, Igisl, Vtovd, Vtovs; real x_s, sqm, alpha, alpha1, eta_p, phi_inf, za, xitsb, rhob; real thesat1, wsat, ysat, zsat, r1, r2, dL, GdL, dL1, FdL, GR, Gmob, Gmob_dL, Gvsat, Gvsatinv, QCLM; real xgm, Voxm, dps, qim, qim1, qim1_1, xgs_ov, xgd_ov, sigVds; real Ux, xg; real mu, nu, xn_s, delta_ns; real Gf, Gf2, inv_Gf2, xi, inv_xi, margin; real qeff, COX_qm; real SP_xg1, SP_S_temp,SP_S_temp1,SP_S_temp2; real SP_S_yg, SP_S_ysub, SP_S_y0, SP_S_a, SP_S_b, SP_S_c; real SP_S_bx, SP_S_tau, SP_S_eta, SP_S_delta0, SP_S_delta1; real SP_S_pC, SP_S_qC, SP_S_A_fac; real SP_S_x1, SP_S_w, SP_S_xbar, SP_S_x0; real SP_S_xi0, SP_S_xi1, SP_S_xi2; real SP_OV_yg, SP_OV_z, SP_OV_eta, SP_OV_a, SP_OV_c; real SP_OV_tau, SP_OV_D0, SP_OV_y0, SP_OV_xi, SP_OV_temp; real SP_OV_p, SP_OV_q, SP_OV_w, SP_OV_Afac, SP_OV_xbar; real SP_OV_x0, SP_OV_u; real x_d, x_m, x_ds, Rxcor, delta_1s, xi0s, xi1s, xi2s, xi0d; real Es, Em, Ed, Ds, Dm, Dd, Ps, xgs, qis, qbs, qbm, Eeffm, Vm; real Phi_0, Phi_2, asat, Phi_0_2, Phi0_Phi2; real Vdse, Vdsat, xn_d, k_ds, Udse; real Mutmp, Phi_sat, delta_nd; real pC, qC, Pm; real d0, D_bar, km, x_pm, xi_pd, p_pd, u_pd, q_pd; real xs_ov, xd_ov, Vovs, Vovd, psi_t; real zg, delVsat, TP, Dsi, Dgate, u0, u0_div_H, x, xsq, inv_x, ex, inv_ex, Ag, Bg, Sg; real H, Fj, Fj2; real N1, Nm1, Delta_N1, Sfl; real H0, t1, t2, sqt2, r, lc, lcinv2, g_ideal, CGeff, mid, mig, migid, c_igid, sqid, sqig; real shot_igs, shot_igsx, shot_igd, shot_igdx, shot_iavl; real Ids, Iimpact, mavl, Igdov, Igsov, Igc0, igc, igcd_h; real Igc, Igcd, Igcs, Igb, Igs, Igd; real Idse, Igbe, Igse, Igde, Igidle, Igisle, Iimpacte; real QI, QD, QB, QG, Qg, Qd, Qb, Qs, Qgs_ov, Qgd_ov; real Qfgs, Qfgd, Qgb_ov; real arg1, arg2max, arg2mina; integer CHNL_TYPE; `ifdef NQSmodel // Variables used in NQS-calculations real SWNQS_i, MUNQS_i, RG_i, RBULK_i, RWELL_i, RJUNS_i, RJUND_i; real Qp1_0, Qp2_0, Qp3_0, Qp4_0, Qp5_0, Qp6_0, Qp7_0, Qp8_0, Qp9_0; real fk1, fk2, fk3, fk4, fk5, fk6, fk7, fk8, fk9; real phi_p1, phi_p2, phi_p3; real phi_p4, phi_p5, phi_p6; real phi_p7, phi_p8, phi_p9; real Qp1, Qp2, Qp3; real Qp4, Qp5, Qp6; real Qp7, Qp8, Qp9; real Qp0, QpN; real QG_NQS, QS_NQS, QD_NQS; real pd, Gp, Gp2, a_factrp, marginp, x_sp, x_dp; real dfQi, fQi, dQis, dQis_1, d2Qis, dQbs, dQy, d2Qy, dpsy2; real ym, inorm, Tnorm, Qb_tmp, QbSIGN; real r_nqs, vnorm, vnorm_inv; real NQS_xg1, NQS_yg, NQS_z, NQS_eta, NQS_a, NQS_c, NQS_tau, NQS_D0, NQS_xi, NQS_p; real NQS_q, NQS_temp, NQS_A_fac, NQS_xbar, NQS_w, NQS_x0, NQS_u, NQS_y0; real xphi, fk0, thesat2, Fvsat; real Vrg, Vrbulk, Vrwell, Vrjund, Vrjuns; real ggate, gbulk, gwell, gjund, gjuns, nt0; real rgatenoise, rbulknoise, rwellnoise, rjundnoise, rjunsnoise; real temp3, temp4, temp5, temp6, temp7, temp8, temp9; `endif // NQSmodel // JUNCAP2 variables `include "JUNCAP200_varlist.include" real isjunbot, qsjunbot, isjunsti, qsjunsti, isjungat, qsjungat, isjun, qsjun, sjnoise, sjnoisex; real idjunbot, qdjunbot, idjunsti, qdjunsti, idjungat, qdjungat, idjun, qdjun, djnoise, djnoisex; real Vjuns, Vjund, VMAXS, VMAXD; real vbimins, vchs, vfmins, vbbtlims, vbimind, vchd, vfmind, vbbtlimd; real ABSOURCE_i, LSSOURCE_i, LGSOURCE_i; real ABDRAIN_i, LSDRAIN_i, LGDRAIN_i, juncapwidth; `ifdef insideADMS // OPinfo ///////////////////////////////////////////////////////////////////////////// // // Variables for operating point info // ///////////////////////////////////////////////////////////////////////////// real id_op, is, ig, ib, P_D, facvsb, facvsb0, sig1k; real ctype `P(ask="yes" info="Flag for channel type" unit=""); real sdint `P(ask="yes" info="Flag for source-drain interchange" unit=""); real ise `P(ask="yes" info="Total source current" unit="A"); real ige `P(ask="yes" info="Total gate current" unit="A"); real ide `P(ask="yes" info="Total drain current" unit="A"); real ibe `P(ask="yes" info="Total bulk current" unit="A"); real ids `P(ask="yes" info="Drain current, excl. avalanche, tunnel, GISL, GIDL, and junction currents" unit="A"); real idb `P(ask="yes" info="Drain to bulk current" unit="A"); real isb `P(ask="yes" info="Source to bulk current" unit="A"); real igs `P(ask="yes" info="Gate-source tunneling current" unit="A"); real igd `P(ask="yes" info="Gate-drain tunneling current" unit="A"); real igb `P(ask="yes" info="Gate-bulk tunneling current" unit="A"); real igcs `P(ask="yes" info="Gate-channel tunneling current (source component)" unit="A"); real igcd `P(ask="yes" info="Gate-channel tunneling current (drain component)" unit="A"); real iavl `P(ask="yes" info="Substrate current due to weak avelanche" unit="A"); real igisl `P(ask="yes" info="Gate-induced source leakage current" unit="A"); real igidl `P(ask="yes" info="Gate-induced drain leakage current" unit="A"); real ijs `P(ask="yes" info="Total source junction current" unit="A"); real ijsbot `P(ask="yes" info="Source junction current (bottom component)" unit="A"); real ijsgat `P(ask="yes" info="Source junction current (gate-edge component)" unit="A"); real ijssti `P(ask="yes" info="Source junction current (STI-edge component)" unit="A"); real ijd `P(ask="yes" info="Total drain junction current" unit="A"); real ijdbot `P(ask="yes" info="Drain junction current (bottom component)" unit="A"); real ijdgat `P(ask="yes" info="Drain junction current (gate-edge component)" unit="A"); real ijdsti `P(ask="yes" info="Drain junction current (STI-edge component)" unit="A"); real vds `P(ask="yes" info="Drain-source voltage" unit="V"); real vgs `P(ask="yes" info="Gate-source voltage" unit="V"); real vsb `P(ask="yes" info="Source-bulk voltage" unit="V"); real vto `P(ask="yes" info="Zero-bias threshold voltage" unit="V"); real vts `P(ask="yes" info="Threshold voltage including back bias effects" unit="V"); real vth `P(ask="yes" info="Threshold voltage including back bias and drain bias effects" unit="V"); real vgt `P(ask="yes" info="Effective gate drive voltage including back bias and drain bias effects" unit="V"); real vdss `P(ask="yes" info="Drain saturation voltage at actual bias" unit="V"); real vsat `P(ask="yes" info="Saturation limit" unit="V"); real gm `P(ask="yes" info="Transconductance" unit="1/Ohm"); real gmb `P(ask="yes" info="Substrate transconductance" unit="1/Ohm"); real gds `P(ask="yes" info="Output conductance" unit="1/Ohm"); real gjs `P(ask="yes" info="Source junction conductance" unit="1/Ohm"); real gjd `P(ask="yes" info="Drain junction conductance" unit="1/Ohm"); real cdd `P(ask="yes" info="Drain capacitance" unit="F"); real cdg `P(ask="yes" info="Drain-gate capacitance" unit="F"); real cds `P(ask="yes" info="Drain-source capacitance" unit="F"); real cdb `P(ask="yes" info="Drain-bulk capacitance" unit="F"); real cgd `P(ask="yes" info="Gate-drain capacitance" unit="F"); real cgg `P(ask="yes" info="Gate capacitance" unit="F"); real cgs `P(ask="yes" info="Gate-source capacitance" unit="F"); real cgb `P(ask="yes" info="Gate-bulk capacitance" unit="F"); real csd `P(ask="yes" info="Source-drain capacitance" unit="F"); real csg `P(ask="yes" info="Source-gate capacitance" unit="F"); real css `P(ask="yes" info="Source capacitance" unit="F"); real csb `P(ask="yes" info="Source-bulk capacitance" unit="F"); real cbd `P(ask="yes" info="Bulk-drain capacitance" unit="F"); real cbg `P(ask="yes" info="Bulk-gate capacitance" unit="F"); real cbs `P(ask="yes" info="Bulk-source capacitance" unit="F"); real cbb `P(ask="yes" info="Bulk capacitance" unit="F"); real cgsol `P(ask="yes" info="Total gate-source overlap capacitance" unit="F"); real cgdol `P(ask="yes" info="Total gate-drain overlap capacitance" unit="F"); real cjs `P(ask="yes" info="Total source junction capacitance" unit="F"); real cjsbot `P(ask="yes" info="Source junction capacitance (bottom component)" unit="F"); real cjsgat `P(ask="yes" info="Source junction capacitance (gate-edge component)" unit="F"); real cjssti `P(ask="yes" info="Source junction capacitance (STI-edge component)" unit="F"); real cjd `P(ask="yes" info="Total drain junction capacitance" unit="F"); real cjdbot `P(ask="yes" info="Drain junction capacitance (bottom component)" unit="F"); real cjdgat `P(ask="yes" info="Drain junction capacitance (gate-edge component)" unit="F"); real cjdsti `P(ask="yes" info="Drain junction capacitance (STI-edge component)" unit="F"); real weff `P(ask="yes" info="Effective channel width for geometrical models" unit="m"); real leff `P(ask="yes" info="Effective channel length for geometrical models" unit="m"); real u `P(ask="yes" info="Transistor gain" unit=""); real rout `P(ask="yes" info="Small-signal output resistance" unit="Ohm"); real vearly `P(ask="yes" info="Equivalent Early voltage" unit="V"); real beff `P(ask="yes" info="Gain factor" unit="A/V^2"); real fug `P(ask="yes" info="Unity gain frequency at actual bias" unit="Hz"); real sfl `P(ask="yes" info="Flicker noise current density at 1 Hz" unit="A/Hz"); real sqrtsff `P(ask="yes" info="Input-referred RMS white noise voltage density at 1 kHz" unit="V/sqrt(Hz)"); real sqrtsfw `P(ask="yes" info="Input-referred RMS white noise voltage density" unit="V/sqrt(Hz)"); real sid `P(ask="yes" info="White noise current density" unit="A^2/Hz"); real sig `P(ask="yes" info="Induced gate noise current density at 1 Hz" unit="A^2/Hz"); real cigid `P(ask="yes" info="Imaginary part of correlation coefficient between Sig and Sid" unit=""); real fknee `P(ask="yes" info="Cross-over frequency above which white noise is dominant" unit="Hz"); real sigs `P(ask="yes" info="Gate-source current noise spectral density" unit="A^2/Hz"); real sigd `P(ask="yes" info="Gate-drain current noise spectral density" unit="A^2/Hz"); real siavl `P(ask="yes" info="Impact ionization current noise spectral density" unit="A^2/Hz"); real ssi `P(ask="yes" info="Total source junction current noise spectral density" unit="A^2/Hz"); real sdi `P(ask="yes" info="Total drain junction current noise specral density" unit="A^2/Hz"); `endif // OPinfo ///////////////////////////////////////////////////////////////////////////// // // Analog block with all calculations and contribs // ///////////////////////////////////////////////////////////////////////////// analog begin begin : initial_model // Code independent of bias or instance parameters // This block needs to be evaluated only once `ifdef LocalModel // Do nothing `else // LocalModel `ifdef Binning // There are no binning parameters that need clipping `else // Binning // Clipping of global model parameters TOX_i = `CLIP_LOW(TOXO, 1e-10); NSUBO_i = `CLIP_LOW(NSUBO, 1e20); WSEG_i = `CLIP_LOW(WSEG, 1e-10); NPCK_i = `CLIP_LOW(NPCK, 0.0); WSEGP_i = `CLIP_LOW(WSEGP, 1e-10); LPCK_i = `CLIP_LOW(LPCK, 1e-10); TOXOV_i = `CLIP_LOW(TOXOVO, 1e-10); LOV_i = `CLIP_LOW(LOV, 0.0); LP1_i = `CLIP_LOW(LP1, 1e-10); LP2_i = `CLIP_LOW(LP2, 1e-10); WBET_i = `CLIP_LOW(WBET, 1e-10); AXL_i = `CLIP_LOW(AXL, 0.0); ALP1L2_i = `CLIP_LOW(ALP1L2, 0.0); ALP2L2_i = `CLIP_LOW(ALP2L2, 0.0); `endif // Binning KVSAT_i = `CLIP_BOTH(KVSAT, -1.0, 1.0); LLODKUO_i = `CLIP_LOW(LLODKUO, 0.0); WLODKUO_i = `CLIP_LOW(WLODKUO, 0.0); LLODVTH_i = `CLIP_LOW(LLODVTH, 0.0); WLODVTH_i = `CLIP_LOW(WLODVTH, 0.0); LODETAO_i = `CLIP_LOW(LODETAO, 0.0); `endif // LocalModel // 4.1 Internal parameters (including temperature scaling) // (only internal parameters independent on instance parameters // are calculated in this section) if (TYPE >= 0) begin CHNL_TYPE = `NMOS; end else begin CHNL_TYPE = `PMOS; end // Transistor temperature TR_i = `CLIP_LOW(TR, -273); TKR = `KELVINCONVERSION + TR_i; TKD = $temperature + DTA; TKD_sq = TKD * TKD; dT = TKD - TKR; rT = TKD / TKR; rTn = TKR / TKD; phit = TKD * `KBOL / `QELE; inv_phit = 1.0 / phit; // Local process parameters Eg = 1.179 - 9.025e-5 * TKD - 3.05e-7 * TKD_sq; phibFac = (1.045 + 4.5e-4 * TKD) * (0.523 + 1.4e-3 * TKD - 1.48e-6 * TKD_sq) * TKD_sq / 9.0E4; phibFac = `MAX(phibFac, 1.0E-3); `ifdef NQSmodel // Round SWNQS to nearest allowed value if (SWNQS < 0.5) begin SWNQS_i = 0.0; end else begin if (SWNQS < 1.5) begin SWNQS_i = 1.0; end else begin if (SWNQS < 2.5) begin SWNQS_i = 2.0; end else begin if (SWNQS < 4.0) begin SWNQS_i = 3.0; end else begin if (SWNQS < 7.0) begin SWNQS_i = 5.0; end else begin SWNQS_i = 9.0; end end end end end inorm = 1.0e-12; r_nqs = 1.0e+3; vnorm = 10.0; vnorm_inv = 1.0 / vnorm; nt0 = 4 * `KBOL * TKD; // parameter for white noise of parasitic resistances `endif // NQSmodel // JUNCAP2 `include "JUNCAP200_InitModel.include" end // initial_model begin : initial_instance // Code independent of bias, but dependent on instance parameters, // (including code dependent on parameters which could IN PRINCIPLE be scaled) // This block needs to be evaluated only once for each instance `ifdef LocalModel juncapwidth= JW; `else // LocalModel // Clipping of the instance parameters SAREF_i = `CLIP_LOW(SAREF, 1e-9); SBREF_i = `CLIP_LOW(SBREF, 1e-9); L_i = `CLIP_LOW(L, 1e-9); W_i = `CLIP_LOW(W, 1e-9); SA_i = SA; SB_i = SB; /////////////////////////////////////////// // GEOMETRICAL PARAMETERSCALING /////////////////////////////////////////// // 3.2 Transistor geometry LEN = 1e-6; WEN = 1e-6; iL = LEN / L_i; iW = WEN / W_i; `ifdef Binning delLPS = LVARO * (1.0 + LVARL * iL); delWOD = WVARO * (1.0 + WVARW * iW); `else // Binning delLPS = LVARO * (1.0 + LVARL * iL) * (1.0 + LVARW * iW); delWOD = WVARO * (1.0 + WVARL * iL) * (1.0 + WVARW * iW); `endif // Binning LE = `CLIP_LOW(L_i + delLPS - 2.0 * LAP, 1e-9); WE = `CLIP_LOW(W_i + delWOD - 2.0 * WOT, 1e-9); LEcv = `CLIP_LOW(L_i + delLPS - 2.0 * LAP + DLQ, 1e-9); WEcv = `CLIP_LOW(W_i + delWOD - 2.0 * WOT + DWQ, 1e-9); Lcv = `CLIP_LOW(L_i + delLPS + DLQ, 1e-9); Wcv = `CLIP_LOW(W_i + delWOD + DWQ, 1e-9); iLE = LEN / LE; iWE = WEN / WE; juncapwidth= WE; `ifdef Binning // 3.4 Geometry scaling with binning scaling rules `include "PSP102_binning.include" `else // Binning // 3.3 Geometry scaling with physical scaling rules // Process parameters VFB = VFBO * (1.0 + VFBL * iLE) * (1.0 + VFBW * iWE) * (1.0 + VFBLW * iLE * iWE); STVFB = STVFBO * (1.0 + STVFBL * iLE) * (1.0 + STVFBW * iWE) * (1.0 + STVFBLW * iLE * iWE); TOX = TOXO; NSUB0e = NSUBO_i * `MAX(( 1.0 + NSUBW * iWE * ln( 1.0 + WE / WSEG_i )), 1.0E-03); NPCKe = NPCK_i * `MAX(( 1.0 + NPCKW * iWE * ln( 1.0 + WE / WSEGP_i )), 1.0E-03); LPCKe = LPCK_i * `MAX(( 1.0 + LPCKW * iWE * ln( 1.0 + WE / WSEGP_i )), 1.0E-03); if (LE > (2 * LPCKe)) begin AA = 7.5e10; BB = sqrt(NSUB0e + 0.5 * NPCKe) - sqrt(NSUB0e); NSUB = sqrt(NSUB0e) + AA * ln(1 + 2 * LPCKe / LE * (exp(BB / AA) - 1)); NSUB = NSUB * NSUB; end else begin if (LE >= LPCKe) begin NSUB = NSUB0e + NPCKe * LPCKe / LE; end else begin // LE < LPCK NSUB = NSUB0e + NPCKe * (2 - LE / LPCKe); end end NEFF = NSUB * (1 - FOL1 * iLE - FOL2 * iLE * iLE); VNSUB = VNSUBO; NSLP = NSLPO; DNSUB = DNSUBO; DPHIB = (DPHIBO + DPHIBL * pow(iLE, DPHIBLEXP)) * (1.0 + DPHIBW * iWE) * (1.0 + DPHIBLW * iLE * iWE); NP = NPO * `MAX(1e-6, (1.0 + NPL * iLE)); CT = (CTO + CTL * pow(iLE, CTLEXP)) * (1.0 + CTW * iWE) * (1.0 + CTLW * iLE * iWE); TOXOV = TOXOVO; NOV = NOVO; // DIBL parameters CF = CFL * pow(iLE, CFLEXP) * (1.0 + CFW * iWE); CFB = CFBO; // Mobility parameters FBET1e = FBET1 * (1.0 + FBET1W * iWE); LP1e = LP1_i * `MAX(1.0 + LP1W * iWE, 1.0E-03); GPE = 1.0 + FBET1e * LP1e / LE * (1.0 - exp(-LE / LP1e)) + FBET2 * LP2_i / LE * (1.0 - exp(-LE / LP2_i)); GPE = `MAX(GPE, 1e-15); GWE = 1.0 + BETW1 * iWE + BETW2 * iWE * ln(1.0 + WE / WBET_i); BETN = UO * WE / (GPE * LE) * GWE; STBET = STBETO * (1.0 + STBETL * iLE) * (1.0 + STBETW * iWE) * (1.0 + STBETLW * iLE * iWE); MUE = MUEO * (1.0 + MUEW * iWE); STMUE = STMUEO; THEMU = THEMUO; STTHEMU = STTHEMUO; CS = (CSO + CSL * pow(iLE, CSLEXP)) * (1.0 + CSW * iWE) * (1.0 + CSLW * iLE * iWE); STCS = STCSO; XCOR = XCORO * (1.0 + XCORL * iLE) * (1.0 + XCORW * iWE) * (1.0 + XCORLW * iLE * iWE); STXCOR = STXCORO; FETA = FETAO; // Series resistance RS = RSW1 * iWE * (1.0 + RSW2 * iWE); STRS = STRSO; RSB = RSBO; RSG = RSGO; // Velocity saturation THESAT = (THESATO + THESATL* GWE / GPE * pow(iLE, THESATLEXP)) * (1.0 + THESATW * iWE) * (1.0 + THESATLW * iLE * iWE); STTHESAT = STTHESATO * (1.0 + STTHESATL * iLE) * (1.0 + STTHESATW * iWE) * (1.0 + STTHESATLW * iLE * iWE); THESATB = THESATBO; THESATG = THESATGO; // Saturation voltage AX = AXO / (1.0 + AXL_i * iLE); // Channel length modulation ALP = ALPL * pow(iLE, ALPLEXP) * (1.0 + ALPW * iWE); tmpx = pow(iLE, ALP1LEXP); ALP1 = ALP1L1 * tmpx * (1.0 + ALP1W * iWE) / (1.0 + ALP1L2_i * iLE * tmpx); tmpx = pow(iLE, ALP2LEXP); ALP2 = ALP2L1 * tmpx * (1.0 + ALP2W * iWE) / (1.0 + ALP2L2_i * iLE * tmpx); VP = VPO; // Impact ionization A1 = A1O * (1.0 + A1L * iLE) * (1.0 + A1W * iWE); A2 = A2O; STA2 = STA2O; A3 = A3O * (1.0 + A3L * iLE) * (1.0 + A3W * iWE); A4 = A4O * (1.0 + A4L * iLE) * (1.0 + A4W * iWE); // Gate current GCO = GCOO; IGINV = IGINVLW / (iWE * iLE); IGOV = IGOVW * LOV_i / (LEN * iWE); STIG = STIGO; GC2 = GC2O; GC3 = GC3O; CHIB = CHIBO; // GIDL AGIDL = AGIDLW * LOV_i / (LEN * iWE); BGIDL = BGIDLO; STBGIDL = STBGIDLO; CGIDL = CGIDLO; // Charge model parameters COX = `EPSOX * WEcv * LEcv / TOX_i; CGOV = `EPSOX * WEcv * LOV_i / TOXOV_i; CGBOV = CGBOVL * Lcv / LEN; CFR = CFRW * Wcv / WEN; FNT = FNTO; // Noise model parameters NFA = iWE * iLE * NFALW; NFB = iWE * iLE * NFBLW; NFC = iWE * iLE * NFCLW; `endif // Binning `ifdef NQSmodel MUNQS = MUNQSO; RG = RGO; RWELL = RWELLO; RBULK = RBULKO; RJUNS = RJUNSO; RJUND = RJUNDO; `endif // NQSModel /////////////////////////////////////////// // STRESSMODEL /////////////////////////////////////////// // 3.5 Stress equations if ((SA_i > 0) && (SB_i > 0)) begin // Auxiliary variables Invsa = 1.0 / (SA_i + 0.5 * L_i); Invsb = 1.0 / (SB_i + 0.5 * L_i); Invsaref = 1.0 / (SAREF_i + 0.5 * L_i); Invsbref = 1.0 / (SBREF_i + 0.5 * L_i); Lx = `MAX(L_i + delLPS, 1e-9); Wx = `MAX(W_i + delWOD + WLOD, 1e-9); templ = 1.0 / pow(Lx, LLODKUO_i); tempw = 1.0 / pow(Wx, WLODKUO_i); Kstressu0 = (1.0 + LKUO * templ + WKUO * tempw + PKUO * templ * tempw) * (1.0 + TKUO * (rT - 1.0)); rhobeta = KUO * (Invsa + Invsb) / Kstressu0; rhobetaref = KUO * (Invsaref + Invsbref) / Kstressu0; templ = 1.0 / pow(Lx, LLODVTH_i); tempw = 1.0 / pow(Wx, WLODVTH_i); Kstressvth0= 1.0 + LKVTHO * templ + WKVTHO * tempw + PKVTHO * templ * tempw; temp0 = Invsa + Invsb - Invsaref - Invsbref; // Parameter adaptations BETN = BETN * (1.0 + rhobeta) / (1.0 + rhobetaref); THESAT = THESAT * (1.0 + rhobeta) * (1.0 + KVSAT_i * rhobetaref) / ((1.0 + rhobetaref) * (1.0 + KVSAT_i * rhobeta)); VFB = VFB + KVTHO * temp0 / Kstressvth0; CF = CF + STETAO * temp0 / pow(Kstressvth0, LODETAO_i); end /////////////////////////////////////////// // END OF SCALINGRULES AND STRESSMODEL /////////////////////////////////////////// `endif // LocalModel // 4.1 Internal parameters (including temperature scaling) // Clipping of the local model parameters VFB_i = VFB; STVFB_i = STVFB; TOX_i = `CLIP_LOW(TOX, 1e-10); NEFF_i = `CLIP_BOTH(NEFF, 1e20, 1e26); VNSUB_i = VNSUB; NSLP_i = `CLIP_LOW(NSLP, 1e-3); DNSUB_i = `CLIP_BOTH(DNSUB, 0.0, 1.0); DPHIB_i = DPHIB; NP_i = `CLIP_LOW(NP, 0.0); QMC_i = `CLIP_LOW(QMC, 0.0); CT_i = `CLIP_LOW(CT, 0.0); TOXOV_i = `CLIP_LOW(TOXOV, 1e-10); NOV_i = `CLIP_BOTH(NOV, 1e20, 1e27); CF_i = `CLIP_LOW(CF, 0.0); CFB_i = `CLIP_BOTH(CFB, 0.0, 1.0); BET_i = `CLIP_LOW(BETN, 0.0); STBET_i = STBET; MUE_i = `CLIP_LOW(MUE, 0.0); STMUE_i = STMUE; THEMU_i = `CLIP_LOW(THEMU, 0.0); STTHEMU_i = STTHEMU; CS_i = `CLIP_LOW(CS, 0.0); STCS_i = STCS; XCOR_i = `CLIP_LOW(XCOR, 0.0); STXCOR_i = STXCOR; FETA_i = `CLIP_LOW(FETA, 0.0); RS_i = `CLIP_LOW(RS, 0.0); STRS_i = STRS; RSB_i = `CLIP_BOTH(RSB, -0.5, 1.0); RSG_i = `CLIP_LOW(RSG, -0.5); THESAT_i = `CLIP_LOW(THESAT, 0.0); STTHESAT_i = STTHESAT; THESATB_i = `CLIP_BOTH(THESATB, -0.5, 1.0); THESATG_i = `CLIP_LOW(THESATG, -0.5); AX_i = `CLIP_LOW(AX, 2.0); ALP_i = `CLIP_LOW(ALP, 0.0); ALP1_i = `CLIP_LOW(ALP1, 0.0); ALP2_i = `CLIP_LOW(ALP2, 0.0); VP_i = `CLIP_LOW(VP, 1.0e-10); A1_i = `CLIP_LOW(A1, 0.0); A2_i = `CLIP_LOW(A2, 0.0); STA2_i = STA2; A3_i = `CLIP_LOW(A3, 0.0); A4_i = `CLIP_LOW(A4, 0.0); GCO_i = `CLIP_BOTH(GCO, -10.0, 10.0); IGINV_i = `CLIP_LOW(IGINV, 0.0); IGOV_i = `CLIP_LOW(IGOV, 0.0); STIG_i = STIG; GC2_i = `CLIP_BOTH(GC2, 0.0, 10.0); GC3_i = `CLIP_BOTH(GC3, -10.0, 10.0); CHIB_i = `CLIP_LOW(CHIB, 1.0); AGIDL_i = `CLIP_LOW(AGIDL, 0.0); BGIDL_i = `CLIP_LOW(BGIDL, 0.0); STBGIDL_i = STBGIDL; CGIDL_i = CGIDL; COX_i = `CLIP_LOW(COX, 0.0); CGOV_i = `CLIP_LOW(CGOV, 0.0); CGBOV_i = `CLIP_LOW(CGBOV, 0.0); CFR_i = `CLIP_LOW(CFR, 0.0); FNT_i = `CLIP_LOW(FNT, 0.0); NFA_i = `CLIP_LOW(NFA, 0.0); NFB_i = `CLIP_LOW(NFB, 0.0); NFC_i = `CLIP_LOW(NFC, 0.0); MULT_i = `CLIP_LOW(MULT, 0.0); // Local process parameters phit1 = phit * (1.0 + CT_i * rTn); inv_phit1 = 1.0 / phit1; VFB_i = VFB_i + STVFB_i * dT; phib = Eg + DPHIB_i + 2.0 * phit * ln(NEFF_i * pow(phibFac, -0.75) * 4.0e-26); phib = `MAX(phib, 5.0E-2); CoxPrime = `EPSOX / TOX_i; tox_sq = TOX_i * TOX_i; G_0 = sqrt(2.0 * `QELE * NEFF_i * `EPSSI * inv_phit) / CoxPrime; // Poly-silicon depletion kp = 0.0; if (NP_i > 0.0) begin arg2max = 8.0e7 / tox_sq; np = `MAX(NP_i, arg2max); np = `MAX(3.0e25, np); kp = 2.0 * CoxPrime * CoxPrime * phit / (`QELE * np * `EPSSI); end // QM corrections qlim2 = 100.0 * phit * phit; qq = 0.0; if (QMC_i > 0.0) begin qq = 0.4 * `QMN * QMC_i * pow(CoxPrime, `twoThirds); if (CHNL_TYPE==`PMOS) begin qq = `QMP / `QMN * qq; end qb0 = sqrt(phit * G_0 * G_0 * phib); dphibq = 0.75 * qq * pow(qb0, `twoThirds); phib = phib + dphibq; G_0 = G_0 * (1.0 + 2.0 * `twoThirds * dphibq / qb0); end sqrt_phib = sqrt(phib); phix = 0.95 * phib; aphi = 0.0025 * phib * phib; bphi = aphi; phix2 = 0.5 * sqrt(bphi); phix1 = `MINA(phix - phix2, 0, aphi); // Gate overlap CoxovPrime = `EPSOX / TOXOV_i; GOV = sqrt(2.0 * `QELE * NOV_i * `EPSSI * inv_phit) / CoxovPrime; GOV2 = GOV * GOV; xi_ov = 1.0 + GOV * `invSqrt2; inv_xi_ov = 1.0 / xi_ov; x_mrg_ov = 1.0e-5 * xi_ov; // Mobility parameters tf_bet = pow(rTn, STBET_i); BET_i = BET_i * CoxPrime * tf_bet; THEMU_i = THEMU_i * pow(rTn, STTHEMU_i); tf_mue = pow(rTn, STMUE_i); MUE_i = MUE_i * tf_mue; tf_cs = pow(rTn, STCS_i); CS_i = CS_i * tf_cs; tf_xcor = pow(rTn, STXCOR_i); XCOR_i = XCOR_i * tf_xcor; E_eff0 = 1.0e-8 * CoxPrime / `EPSSI; eta_mu = 0.5 * FETA_i; if (CHNL_TYPE == `PMOS) begin eta_mu = `oneThird * FETA_i; end // Series resistance tf_ther = pow(rTn, STRS_i); RS_i = RS_i * tf_ther; THER_i = 2 * BET_i * RS_i; // Velocity saturation tf_thesat = pow(rTn, STTHESAT_i); THESAT_i = THESAT_i * tf_thesat; Vdsat_lim = 3.912023005 * phit1; inv_AX = 1.0 / AX_i; inv_VP = 1.0 / VP_i; // Impact ionization A2_i = A2_i * pow(rT, STA2_i); // Gate current tf_ig = pow(rT, STIG_i); IGINV_i = IGINV_i * tf_ig; IGOV_i = IGOV_i * tf_ig; inv_CHIB = 1.0 / CHIB_i; tempM = 4.0 * `oneThird * sqrt(2 * `QELE * `MELE * CHIB_i) / `HBAR; BCH = tempM * TOX_i; BOV = tempM * TOXOV_i; GCQ = 0; if (GC3_i < 0) begin GCQ = -0.495 * GC2_i / GC3_i; end alpha_b = 0.5 * (phib + Eg); Dch = GCO_i * phit1; Dov = GCO_i * phit; // GIDL AGIDL_i = AGIDL_i * 4e-18 / (TOXOV_i * TOXOV_i); tempM = `MAX(1.0 + STBGIDL_i * dT, 0); BGIDL_i = BGIDL_i * tempM * TOXOV_i * 5e8; // Noise nt = FNT_i * 4 * `KBOL * TKD; Cox_over_q = CoxPrime / `QELE; Sfl_prefac = phit * phit * BET_i / Cox_over_q; // Additional internal parameters x1 = 1.25; inv_xg1 = 1.0 / (x1 + GOV * 7.324648775608221e-1); // = 1.0/(x1+GOV*sqrt(exp(-x1)+x1-1)); `ifdef NQSmodel // NQS parameters and variables MUNQS_i = `CLIP_LOW(MUNQS, 0.0); RG_i = `CLIP_LOW(RG, 1.0e-6); RBULK_i = `CLIP_LOW(RBULK, 1.0e-6); RJUNS_i = `CLIP_LOW(RJUNS, 1.0e-6); RJUND_i = `CLIP_LOW(RJUND, 1.0e-6); RWELL_i = `CLIP_LOW(RWELL, 1.0e-6); // Conductance of parasitic resistance ggate = MULT_i / RG_i; gbulk = MULT_i / RBULK_i; gjuns = MULT_i / RJUNS_i; gjund = MULT_i / RJUND_i; gwell = MULT_i / RWELL_i; `endif // NQSmodel // JUNCAP2 vbimins = 0.0; vfmins = 0.0; vchs = 0.0; vbbtlims = 0.0; vbimind = 0.0; vfmind = 0.0; vchd = 0.0; vbbtlimd = 0.0; vj = 0.0; idmult = 0.0; vjsrh = 0.0; zinv = 0.0; wdep = 0.0; wsrh = 0.0; asrh = 0.0; vav = 0.0; vbi_minus_vjsrh = 0.0; if (SWJUNCAP == 0.0) begin ABSOURCE_i = 0.0; LSSOURCE_i = 0.0; LGSOURCE_i = 0.0; ABDRAIN_i = 0.0; LSDRAIN_i = 0.0; LGDRAIN_i = 0.0; VMAXS = 0.0; VMAXD = 0.0; end else begin if (SWJUNCAP == 2.0) begin ABSOURCE_i = `CLIP_LOW(AS, `AB_cliplow); LSSOURCE_i = `CLIP_LOW(PS, `LS_cliplow); LGSOURCE_i = juncapwidth; ABDRAIN_i = `CLIP_LOW(AD, `AB_cliplow); LSDRAIN_i = `CLIP_LOW(PD, `LS_cliplow); LGDRAIN_i = juncapwidth; end else begin if (SWJUNCAP == 3.0) begin ABSOURCE_i = `CLIP_LOW(AS, `AB_cliplow); ABDRAIN_i = `CLIP_LOW(AD, `AB_cliplow); LSSOURCE_i = `CLIP_LOW(PS - juncapwidth, `LS_cliplow); LGSOURCE_i = juncapwidth; LSDRAIN_i = `CLIP_LOW(PD - juncapwidth, `LS_cliplow); LGDRAIN_i = juncapwidth; end else begin ABSOURCE_i = `CLIP_LOW(ABSOURCE, `AB_cliplow); LSSOURCE_i = `CLIP_LOW(LSSOURCE, `LS_cliplow); LGSOURCE_i = `CLIP_LOW(LGSOURCE, `LG_cliplow); ABDRAIN_i = `CLIP_LOW(ABDRAIN, `AB_cliplow); LSDRAIN_i = `CLIP_LOW(LSDRAIN, `LS_cliplow); LGDRAIN_i = `CLIP_LOW(LGDRAIN, `LG_cliplow); end end `JuncapInitInstance(ABSOURCE_i, LSSOURCE_i, LGSOURCE_i, VMAXS, vbimins, vchs, vfmins, vbbtlims) `JuncapInitInstance(ABDRAIN_i, LSDRAIN_i, LGDRAIN_i, VMAXD, vbimind, vchd, vfmind, vbbtlimd) end end // initial_instance ///////////////////////////////////////////////////////////////////////////// // // DC bias dependent quantities (calculations for current contribs) // ///////////////////////////////////////////////////////////////////////////// begin : evaluateStatic // Initialisation of some variables SP_S_x1 = 0.0; x_s = 0.0; sqm = 0.0; alpha = 0.0; eta_p = 1.0; xitsb = 0.0; rhob = 0.0; GdL = 1.0; FdL = 1.0; Gmob = 1.0; Gmob_dL = 1.0; Udse = 0.0; QCLM = 0.0; thesat1 = 0.0; Gvsat = 1.0; Gvsatinv = 1.0; xgm = 0.0; dps = 0.0; qim = 0.0; qim1 = 0.0; H = 1.0; xs_ov = 0.0; xd_ov = 0.0; Vovs = 0.0; Vovd = 0.0; Iimpact = 0.0; mavl = 0.0; `ifdef NQSmodel // Initialization of variables for NQS model pd = 1.0; ym = 0.0; Vrg = V(G ,GP); Vrjuns = V(BS,BI); Vrjund = V(BD,BI); Vrbulk = V(BP,BI); Vrwell = V(B ,BI); `endif // NQSmodel if (CHNL_TYPE == `NMOS) begin Vgs = V(`Gint, S); Vds = V(D, S); Vsb = V(S, `Bint); Vjuns = -V(S, `Bjs); Vjund = -V(D, `Bjd); end else begin Vgs = -V(`Gint, S); Vds = -V(D, S); Vsb = -V(S, `Bint); Vjuns = V(S, `Bjs); Vjund = V(D, `Bjd); end // Source-drain interchange sigVds = 1.0; if (Vds < 0.0) begin sigVds = -1.0; Vgs = Vgs - Vds; Vsb = Vsb + Vds; Vds = -Vds; end Vgd = Vgs - Vds; Vdb = Vds + Vsb; Vgb = Vgs + Vsb; xgs_ov = -Vgs * inv_phit; xgd_ov = -Vgd * inv_phit; // 4.2.1 Conditioning of terminal voltages temp = `MINA(Vdb, Vsb, bphi) + phix; Vsbstar = Vsb - `MINA(temp, 0, aphi) + phix1; Vdbstar = Vds + Vsbstar; Vgbstar = Vgs + Vsbstar; Vgb1 = Vgbstar - VFB_i; Vdsx = sqrt(Vds * Vds + 0.01) - 0.1; Vsbx = Vsbstar + 0.5 * (Vds - Vdsx); delVg = CF_i * (Vdsx * (1 + CFB_i * Vsbx)); // DIBL Vgb1 = Vgb1 + delVg; xg = Vgb1 * inv_phit1; // 4.2.2 Bias dependent body factor if (DNSUB_i > 0.0) begin Dnsub = DNSUB_i * `MAXA(0, Vgs + Vsb - VNSUB_i, NSLP_i); Gf = G_0 * sqrt(1.0 + Dnsub); end else begin Gf = G_0; end // 4.2.3 Surface potential at source side Gf2 = Gf * Gf; inv_Gf2 = 1.0 / Gf2; xi = 1.0 + Gf * `invSqrt2; inv_xi = 1.0 / xi; Ux = Vsbstar * inv_phit1; xn_s = phib * inv_phit1 + Ux; if (xn_s < `se) delta_ns = exp(-xn_s); else delta_ns = `ke / `P3(xn_s - `se); margin = 1e-5 * xi; `sp_s(x_s, xg, xn_s, delta_ns) x_d = x_s; x_m = x_s; x_ds = 0.0; // // Core PSP current calculation // if (xg <= 0.0) begin qis = 0.0; Ids = 0.0; xgm = xg - x_s; Voxm = xgm * phit1; qeff = Voxm; Vdsat = Vdsat_lim; end else begin // (xg > 0) delta_1s = 0.0; temp = 1.0 / (2.0 + x_s * x_s); xi0s = x_s * x_s * temp; xi1s = 4.0 * (x_s * temp * temp); xi2s = (8.0 * temp - 12.0 * xi0s) * temp * temp; if (x_s < `se05) begin delta_1s = exp(x_s); Es = 1.0 / delta_1s; delta_1s = delta_ns * delta_1s; end else if (x_s > (xn_s - `se05)) begin delta_1s = exp(x_s - xn_s); Es = delta_ns / delta_1s; end else begin delta_1s = `ke05 / `P3(xn_s - x_s - `se05); Es = `ke05 / `P3(x_s - `se05); end Ds = delta_1s - delta_ns * (x_s + 1.0 + xi0s); if (x_s < 1.0e-5) begin Ps = 0.5 * (x_s * x_s * (1.0 - `oneThird * (x_s * (1.0 - 0.25 * x_s)))); Ds = `oneSixth * (delta_ns * x_s * x_s * x_s * (1.0 + 1.75 * x_s)); temp = sqrt(1.0 - `oneThird * (x_s * (1.0 - 0.25 * x_s))); sqm = `invSqrt2 * (x_s * temp); alpha = 1.0 + Gf * `invSqrt2 * (1.0 - 0.5 * x_s + `oneSixth * (x_s * x_s)) / temp; end else begin Ps = x_s - 1.0 + Es; sqm = sqrt(Ps); alpha = 1.0 + 0.5 * (Gf * (1.0 - Es) / sqm); end Em = Es; Ed = Em; Dm = Ds; Dd = Dm; // 4.2.4 Drain saturation voltage Rxcor = (1.0 + 0.2 * XCOR_i * Vsbx) / (1.0 + XCOR_i * Vsbx); if ( Ds > `ke05) begin xgs = Gf * sqrt(Ps + Ds); qis = Gf2 * Ds * phit1 / (xgs + Gf * sqm); qbs = sqm * Gf * phit1; if (RSB_i < 0) begin rhob = 1.0 / (1.0 - RSB_i * Vsbx); end else begin rhob = 1.0 + RSB_i * Vsbx; end if (RSG_i < 0) begin temp = 1.0 - RSG_i * qis; end else begin temp = 1.0 / (1.0 + RSG_i * qis); end GR = THER_i * (rhob * temp * qis); Eeffm = E_eff0 * (qbs + eta_mu * qis); Mutmp = pow(Eeffm * MUE_i, THEMU_i) + CS_i * (Ps / (Ps + Ds + 1.0e-14)); Gmob = (1.0 + Mutmp + GR) * Rxcor; if (THESATB_i < 0) begin xitsb = 1.0 / (1.0 - THESATB_i * Vsbx); end else begin xitsb = 1.0 + THESATB_i * Vsbx; end temp2 = qis * xitsb; wsat = 100.0 * (temp2 / (100.0 + temp2)); if (THESATG_i < 0) begin temp = 1 / (1 - THESATG_i * wsat); end else begin temp = 1 + THESATG_i * wsat; end thesat1 = THESAT_i * (temp / Gmob); phi_inf = qis / alpha + phit1; ysat = thesat1 * phi_inf * `invSqrt2; if (CHNL_TYPE==`PMOS) begin ysat = ysat / sqrt(1.0 + ysat); end za = 2.0 / (1.0 + sqrt(1.0 + 4.0 * ysat)); temp1 = za * ysat; Phi_0 = phi_inf * za * (1.0 + 0.86 * (temp1 * (1.0 - temp1 * za) / (1.0 + 4.0 * (temp1 * temp1 * za)))); asat = xgs + 0.5 * Gf2; Phi_2 = 0.98 * (Gf2 * Ds * phit1 / (asat + sqrt(asat * asat - Gf2 * Ds * 0.98))); Phi_0_2 = Phi_0 + Phi_2; Phi0_Phi2 = 2.0 * (Phi_0 * Phi_2); Phi_sat = Phi0_Phi2 / (Phi_0_2 + sqrt(Phi_0_2 * Phi_0_2 - 1.98 * Phi0_Phi2)); Vdsat = Phi_sat - phit1 * ln(1.0 + Phi_sat * (Phi_sat - 2.0 * asat * phit1) * inv_Gf2 / (phit1 * phit1 * Ds)); end else begin Vdsat = Vdsat_lim; end temp = pow(Vds / Vdsat, AX_i); Vdse = Vds * pow(1.0 + temp, -inv_AX); // 4.2.5 Surface potential at drain side Udse = Vdse * inv_phit1; xn_d = xn_s + Udse; if (Udse < `se) begin k_ds = exp(-Udse); end else begin k_ds = `ke / `P3(Udse - `se); end delta_nd = delta_ns * k_ds; `sp_s_d(x_d, xg, xn_d, delta_nd) x_ds = x_d - x_s; // // Approximations for extremely small x_ds: capacitance calulation // if (x_ds < 1.0E-10) begin pC = 2.0 * (xg - x_s) + Gf2 * (1.0 - Es + delta_1s * k_ds - delta_nd * (1.0 + xi1s)); qC = Gf2 * (1.0 - k_ds) * Ds; temp = 2.0 - Gf2 * (Es + delta_1s * k_ds - delta_nd * xi2s); temp = pC * pC - 2.0 * (temp * qC); x_ds = 2.0 * (qC / (pC + sqrt(temp))); x_d = x_s + x_ds; end dps = x_ds * phit1; // deltaPsi xi0d = x_d * x_d / (2.0 + x_d * x_d); if (x_d < `se05) begin Ed = exp(-x_d); if (x_d < 1.0e-5) begin Dd = `oneSixth * delta_nd * x_d * x_d * x_d * (1.0 + 1.75 * x_d); end else begin Dd = delta_nd * (1.0 / Ed - x_d - 1.0 - xi0d); end end else begin if (x_d > (xn_d - `se05)) begin temp = exp(x_d - xn_d); Ed = delta_nd / temp; Dd = temp - delta_nd * (x_d + 1.0 + xi0d); end else begin Ed = `ke05 / `P3(x_d - `se05); temp = `ke05 / `P3(xn_d - x_d - `se05); Dd = temp - delta_nd * (x_d + 1.0 + xi0d); end end // 4.2.6 Mid-point surface potential x_m = 0.5 * (x_s + x_d); Em = 0.0; temp = Ed * Es; if (temp > 0.0) begin Em = sqrt(temp); end D_bar = 0.5 * (Ds + Dd); Dm = D_bar + 0.125 * (x_ds * x_ds * (Em - 2.0 * inv_Gf2)); if (x_m < 1.0e-5) begin Pm = 0.5 * (x_m * x_m * (1.0 - `oneThird * (x_m * (1.0 - 0.25 * x_m)))); xgm = Gf * sqrt(Dm + Pm); // 4.2.7 Polysilicon depletion if (kp > 0.0) begin eta_p = 1.0 / sqrt(1.0 + kp * xgm); end // (kp > 0.0) temp = sqrt(1.0 - `oneThird * (x_m * (1.0 - 0.25 * x_m))); sqm = `invSqrt2 * (x_m * temp); alpha = eta_p + `invSqrt2 * (Gf * (1.0 - 0.5 * x_m + `oneSixth * (x_m * x_m)) / temp); end else begin Pm = x_m - 1.0 + Em; xgm = Gf * sqrt(Dm + Pm); // 4.2.7 Polysilicon depletion if (kp > 0.0) begin d0 = 1.0 - Em + 2.0 * (xgm * inv_Gf2); eta_p = 1.0 / sqrt(1.0 + kp * xgm); temp = eta_p / (eta_p + 1.0); x_pm = kp * (temp * temp * Gf2 * Dm); p_pd = 2.0 * (xgm - x_pm) + Gf2 * (1.0 - Em + Dm); q_pd = x_pm * (x_pm - 2.0 * xgm); xi_pd = 1.0 - 0.5 * (Gf2 * (Em + Dm)); u_pd = q_pd * p_pd / (p_pd * p_pd - xi_pd * q_pd); x_m = x_m + u_pd; km = exp(u_pd); Em = Em / km; Dm = Dm * km; Pm = x_m - 1.0 + Em; xgm = Gf * sqrt(Dm + Pm); help = 1.0 - Em + 2.0 * (xgm * eta_p * inv_Gf2); x_ds = x_ds * km * (d0 + D_bar) / (help + km * D_bar); dps = x_ds * phit1; end // (kp > 0.0) sqm = sqrt(Pm); alpha = eta_p + 0.5 * (Gf * (1.0 - Em) / sqm); end // 4.2.8 Potential midpoint inversion charge qim = phit1 * (Gf2 * Dm / (xgm + Gf * sqm)); // 4.2.8 Potential midpoint inversion charge (continued) qim1 = qim + phit1 * alpha; qim1_1 = 1.0 / qim1; qbm = sqm * Gf * phit1; // Series resistance if (RSG_i < 0) begin temp = 1.0 - RSG_i * qim; end else begin temp = 1.0 / (1.0 + RSG_i * qim); end GR = THER_i * (rhob * temp * qim); // Mobility reduction qeff = qbm + eta_mu * qim; Eeffm = E_eff0 * qeff; Mutmp = pow(Eeffm * MUE_i, THEMU_i) + CS_i * (Pm / (Pm + Dm + 1.0e-14)); Gmob = (1.0 + Mutmp + GR) * Rxcor; // 4.2.9 Drain-source channel current // Channel length modulation r1 = qim * qim1_1; r2 = phit1 * (alpha * qim1_1); temp = ln((1.0 + (Vds - dps) * inv_VP) / (1.0 + (Vdse - dps) * inv_VP)); temp1 = ln(1.0 + Vdsx * inv_VP); dL = ALP_i * temp; GdL = 1.0 / (1.0 + dL + dL * dL); dL1 = dL + ALP1_i * (qim1_1 * r1 * temp) + ALP2_i * (qbm * r2 * r2 * temp1); FdL = (1.0 + dL1 + dL1 * dL1) * GdL; // Velocity saturation temp2 = qim * xitsb; wsat = 100.0 * (temp2 / (100.0 + temp2)); Gmob_dL = Gmob * GdL; if (THESATG_i < 0) begin temp = 1 / (1 - THESATG_i * wsat); end else begin temp = 1 + THESATG_i * wsat; end thesat1 = THESAT_i * (temp / Gmob_dL); zsat = thesat1 * thesat1 * dps * dps; if (CHNL_TYPE == `PMOS) begin zsat = zsat / (1.0 + thesat1 * dps); end Gvsat = 0.5 * (Gmob_dL * (1.0 + sqrt(1.0 + 2.0 * zsat))); Gvsatinv = 1.0 / Gvsat; // Drain-source current Ids = BET_i * (FdL * qim1 * dps * Gvsatinv); // 4.2.10 Variables for calculation of intrinsic charges and gate current Voxm = xgm * phit1; temp = Gmob_dL * Gvsatinv; alpha1 = alpha * (1.0 + 0.5 * (zsat * temp * temp)); H = temp * qim1 / alpha1; // 4.2.11 Impact-Ionization if (SWIMPACT != 0) begin delVsat = Vds - A3_i * dps; if (delVsat > 0) begin temp2 = A2_i * ((1.0 + A4_i * (sqrt(phib + Vsbstar) - sqrt_phib)) / delVsat); `expl_low(-temp2, temp) mavl = A1_i * (delVsat * temp); Iimpact = Ids * mavl; end end end // (xg > 0) // 4.2.12 Surface potential in gate overlap regions if (((SWIGATE != 0) && (IGOV_i > 0)) || ((SWGIDL != 0) && (AGIDL_i > 0)) || (CGOV_i > 0)) begin `sp_ov(xs_ov, xgs_ov) `sp_ov(xd_ov, xgd_ov) Vovs = -phit * (xgs_ov + xs_ov); Vovd = -phit * (xgd_ov + xd_ov); end // 4.2.13 Gate current Igsov = 0.0; Igdov = 0.0; Igc = 0.0; Igs = 0.0; Igd = 0.0; Igb = 0.0; Igcs = 0.0; Igcd = 0.0; if (SWIGATE != 0) begin if (IGOV_i > 0) begin // Gate-source overlap component of gate current arg2mina = Vovs + Dov; psi_t = `MINA(0.0, arg2mina, 0.01); zg = sqrt(Vovs * Vovs + 1.0e-6) * inv_CHIB; if (GC3_i < 0) begin zg = `MINA(zg, GCQ, 1.0e-6); end arg1 = (3.0 + xs_ov + psi_t * inv_phit); `expl(arg1, Dsi) arg1 = -Vgs * inv_phit; `expl(arg1, temp) Dgate = Dsi * temp; temp = BOV * (-1.5 + zg * (GC2_i + GC3_i * zg)); if (temp > 0) begin TP = `P3(temp); end else begin `expl_low(temp, TP) end Igsov = IGOV_i * (TP * ln((1.0 + Dsi) / (1.0 + Dgate))); // Gate-drain overlap component of gate current arg2mina = Vovd + Dov; psi_t = `MINA(0.0, arg2mina, 0.01); zg = sqrt(Vovd * Vovd + 1.0e-6) * inv_CHIB; if (GC3_i < 0) begin zg = `MINA(zg, GCQ, 1.0e-6); end arg1 = (3.0 + xd_ov + psi_t * inv_phit); `expl(arg1, Dsi) arg1 = -Vgd * inv_phit; `expl(arg1, temp) Dgate = Dsi * temp; temp = BOV * (-1.5 + zg * (GC2_i + GC3_i * zg)); if (temp > 0) begin TP = `P3(temp); end else begin `expl_low(temp, TP) end Igdov = IGOV_i * (TP * ln((1.0 + Dsi) / (1.0 + Dgate))); end // Gate-channel component of gate current if (IGINV_i > 0) begin if (xg <= 0.0) begin temp = pow(Vds / Vdsat_lim, AX_i); Udse = Vds * pow(1.0 + temp, -inv_AX) * inv_phit1; end `expl_low(x_ds-Udse, temp) Vm = Vsbstar + phit1 * (0.5 * x_ds - ln(0.5 * (1.0 + temp))); arg2mina = Voxm + Dch; psi_t = `MINA(0.0, arg2mina, 0.01); zg = sqrt(Voxm * Voxm + 1.0e-6) * inv_CHIB; if (GC3_i < 0) begin zg = `MINA(zg, GCQ, 1.0e-06); end arg1 = (x_m + (psi_t - alpha_b - Vm) * inv_phit1); `expl(arg1,Dsi) arg1 = -(Vgs + Vsbstar - Vm) * inv_phit1; `expl(arg1,temp) Dgate = Dsi * temp; temp = BCH * (-1.5 + zg * (GC2_i + GC3_i * zg)); if (temp > 0) begin TP = `P3(temp); end else begin `expl_low(temp, TP) end Igc0 = IGINV_i * (TP * ln((1.0 + Dsi) / (1.0 + Dgate))); // Source/drain partitioning of gate-channel current if ((xg <= 0) || ((GC2_i == 0) && (GC3_i == 0))) begin igc = 1.0; igcd_h = 0.5; end else begin temp = GC2_i + 2.0 * GC3_i * zg; u0 = CHIB_i / (temp * BCH); x = 0.5 * (dps / u0); u0_div_H = u0 / H; Bg = u0_div_H * (1.0 - u0_div_H) * 0.5; Ag = 0.5 - 3.0 * Bg; if (x < 1.0e-3) begin xsq = x * x; igc = 1.0 + xsq * (`oneSixth + u0_div_H * `oneThird + `oneSixth * (xsq * (0.05 + 0.2 * u0_div_H))); igcd_h = 0.5 * igc - `oneSixth * (x * (1.0 + xsq * (0.4 * (Bg + 0.25) + 0.0285714285714 * (xsq * (0.125 + Bg))))); end else begin inv_x = 1.0 / x; `expl(x, ex) inv_ex = 1.0 / ex; temp = ex - inv_ex; temp2 = ex + inv_ex; igc = 0.5 * ((1.0 - u0_div_H) * temp * inv_x + u0_div_H * temp2); igcd_h = 0.5 * (igc - temp * (Bg - Ag * inv_x * inv_x) - Ag * temp2 * inv_x); end end Sg = 0.5 * (1.0 + xg / sqrt(xg * xg + 1.0e-6)); Igc = Igc0 * igc * Sg; Igcd = Igc0 * igcd_h * Sg; Igcs = Igc - Igcd; Igb = Igc0 * igc * (1.0 - Sg); end // (IGINV >0) Igs = Igsov + Igcs; Igd = Igdov + Igcd; end // (SWIGATE != 0) // 4.2.14 GIDL/GISL current Igidl = 0.0; Igisl = 0.0; if ((SWGIDL != 0) && (AGIDL_i > 0)) begin // GIDL current computation if (Vovd < 0) begin Vtovd = sqrt(Vovd * Vovd + CGIDL_i * CGIDL_i * (Vdb * Vdb) + 1.0e-6); temp = -BGIDL_i / Vtovd; `expl_low(temp, temp2) Igidl = -AGIDL_i * (Vdb * Vovd * Vtovd * temp2); end // GISL current computation if (Vovs < 0) begin Vtovs = sqrt(Vovs * Vovs + CGIDL_i * CGIDL_i * (Vsb * Vsb) + 1.0e-6); temp = -BGIDL_i / Vtovs; `expl_low(temp, temp2) Igisl = -AGIDL_i * (Vsb * Vovs * Vtovs * temp2); end end // (SWGIDL != 0) end // evaluateStatic ///////////////////////////////////////////////////////////////////////////// // // AC bias dependent quantities (calculations for charge contribs) // ///////////////////////////////////////////////////////////////////////////// begin : evaluateDynamic // 4.2.16 Quantum mechanical corrections COX_qm = COX_i; if (qq > 0.0) begin COX_qm = COX_i / (1.0 + qq * pow(qeff * qeff + qlim2, -1.0 * `oneSixth)); end // 4.2.17 Intrinsic charge model if (xg <= 0.0) begin QG = Voxm; QI = 0.0; QD = 0.0; QB = QG; end else begin Fj = 0.5 * (dps / H); Fj2 = Fj * Fj; QCLM = (1.0 - GdL) * (qim - 0.5 * (alpha * dps)); QG = Voxm + 0.5 * (eta_p * dps * (Fj * GdL * `oneThird - 1.0 + GdL)); temp = alpha * dps * `oneSixth; QI = GdL * (qim + temp * Fj) + QCLM; QD = 0.5 * (GdL * GdL * (qim - temp * (1.0 - Fj - 0.2 * Fj2)) + QCLM * (1.0 + GdL)); QB = QG - QI; end Qg = QG * COX_qm; Qd = -QD * COX_qm; Qb = -QB * COX_qm; // 4.2.18 Extrinsic charge model Qgs_ov = CGOV_i * Vovs; Qgd_ov = CGOV_i * Vovd; Qgb_ov = CGBOV_i * Vgb; // Outer fringe charge Qfgs = CFR_i * Vgs; Qfgd = CFR_i * Vgd; `ifdef NQSmodel // Variables for NQS model Gp = 0.0; Gp2 = 0.0; a_factrp = 0.0; marginp = 0.0; if (SWNQS_i != 0) begin if (xg <= 0.0) begin ym = 0.5; pd = 1.0; Gp = Gf; end else begin ym = 0.5 * ( 1.0 + 0.25 * (dps / H)); pd = xgm / (xg - x_m); Gp = Gf / pd; end Gp2 = Gp * Gp; a_factrp = 1.0 + Gp * `invSqrt2; marginp = 1e-5 * a_factrp; end `endif // NQSmodel end // evaluateDynamic ///////////////////////////////////////////////////////////////////////////// // // JUNCAP2 contribs // ///////////////////////////////////////////////////////////////////////////// begin : evaluateStaticDynamic // Source side VAK = Vjuns; VMAX = VMAXS; vbimin = vbimins; vfmin = vfmins; vch = vchs; vbbtlim = vbbtlims; `juncapcommon(ABSOURCE_i,LSSOURCE_i,LGSOURCE_i,isjunbot,qsjunbot,isjunsti,qsjunsti,isjungat,qsjungat) // Drain side VAK = Vjund; VMAX = VMAXD; vbimin = vbimind; vfmin = vfmind; vch = vchd; vbbtlim = vbbtlimd; `juncapcommon(ABDRAIN_i,LSDRAIN_i,LGDRAIN_i,idjunbot,qdjunbot,idjunsti,qdjunsti,idjungat,qdjungat) `ifdef NQSmodel // Set initial conditions for NQS model `include "PSP102_InitNQS.include" `endif // NQSmodel end // evaluateStaticDynamic ///////////////////////////////////////////////////////////////////////////// // // Current contribs // ///////////////////////////////////////////////////////////////////////////// begin : loadStatic // 4.2.15 Total terminal currents // Intrinsic MOSFET current Idse = MULT_i * Ids; // Gate (tunneling) current components Igbe = MULT_i * Igb; Igse = MULT_i * Igs; Igde = MULT_i * Igd; // GIDL/GISL current Igidle = MULT_i * Igidl; Igisle = MULT_i * Igisl; // Impact ionization current Iimpacte = MULT_i * Iimpact; // JUNCAP2 isjun = MULT_i * (ABSOURCE_i * isjunbot + LSSOURCE_i * isjunsti + LGSOURCE_i * isjungat); idjun = MULT_i * (ABDRAIN_i * idjunbot + LSDRAIN_i * idjunsti + LGDRAIN_i * idjungat); // Convert back for NMOS-PMOS and Source-Drain interchange if (sigVds > 0) begin I(D, `Bint) <+ CHNL_TYPE * (Iimpacte + Igidle); I(D, S) <+ CHNL_TYPE * Idse; I(`Gint, S) <+ CHNL_TYPE * Igse; I(`Gint, D) <+ CHNL_TYPE * Igde; I(S, `Bint) <+ CHNL_TYPE * Igisle; end else begin I(S, `Bint) <+ CHNL_TYPE * (Iimpacte + Igidle); I(S, D) <+ CHNL_TYPE * Idse; I(`Gint, D) <+ CHNL_TYPE * Igse; I(`Gint, S) <+ CHNL_TYPE * Igde; I(D, `Bint) <+ CHNL_TYPE * Igisle; end I(`Gint, `Bint) <+ CHNL_TYPE * Igbe; I(`Bjs, S) <+ CHNL_TYPE * isjun; I(`Bjd, D) <+ CHNL_TYPE * idjun; `ifdef NQSmodel I(G, GP) <+ Vrg * ggate; I(BP, BI) <+ Vrbulk * gbulk; I(BS, BI) <+ Vrjuns * gjuns; I(BD, BI) <+ Vrjund * gjund; I(B, BI) <+ Vrwell * gwell; `endif // NQSmodel I(D, S) <+ Vds * `GMIN; end // loadStatic ///////////////////////////////////////////////////////////////////////////// // // ddt() contribs from charges (Note: MULT is handled explicitly) // ///////////////////////////////////////////////////////////////////////////// begin : loadDynamic `ifdef NQSmodel // Calculate NQS charge contributions `include "PSP102_ChargesNQS.include" `endif // NQSmodel // 4.2.19 Total terminal charges // Intrinsic MOSFET charges Qg = MULT_i * Qg; Qb = MULT_i * Qb; Qd = MULT_i * Qd; Qs = -(Qg + Qb + Qd); // Total outerFringe + overlap for // gate-source and gate-drain. Qfgs = MULT_i * (Qfgs + Qgs_ov); Qfgd = MULT_i * (Qfgd + Qgd_ov); // Gate-bulk overlap charge Qgb_ov = MULT_i * Qgb_ov; // JUNCAP2 qsjun = MULT_i * (ABSOURCE_i * qsjunbot + LSSOURCE_i * qsjunsti + LGSOURCE_i * qsjungat); qdjun = MULT_i * (ABDRAIN_i * qdjunbot + LSDRAIN_i * qdjunsti + LGDRAIN_i * qdjungat); // Convert back (undo S-D interchange) if (sigVds < 0) begin temp = Qd; // Qd <--> Qs Qd = Qs; Qs = temp; temp = Qfgd; // Qfgd <--> Qfgs Qfgd = Qfgs; Qfgs = temp; end I(`Gint, S) <+ ddt(CHNL_TYPE * Qg); I(`Bint, S) <+ ddt(CHNL_TYPE * Qb); I(D, S) <+ ddt(CHNL_TYPE * Qd); I(`Gint, S) <+ ddt(CHNL_TYPE * Qfgs); I(`Gint, D) <+ ddt(CHNL_TYPE * Qfgd); I(`Gint, `Bint) <+ ddt(CHNL_TYPE * Qgb_ov); I(`Bjs, S) <+ ddt(CHNL_TYPE * qsjun); I(`Bjd, D) <+ ddt(CHNL_TYPE * qdjun); end // loadDynamic ///////////////////////////////////////////////////////////////////////////// // // Noise // ///////////////////////////////////////////////////////////////////////////// begin : noise // 4.2.20 Noise variable calculation Sfl = 0.0; mid = 0.0; mig = 0.0; migid = 0.0; c_igid = 0.0; CGeff = COX_qm * eta_p; sqid = 0.0; sqig = 0.0; if ((xg > 0.0) && (MULT_i > 0) && (BET_i > 0)) begin N1 = Cox_over_q * alpha * phit; Nm1 = Cox_over_q * qim1; Delta_N1 = Cox_over_q * (alpha * dps); Sfl = (NFA_i - NFB_i * N1 + NFC_i * (N1 * N1)) * ln((Nm1 + 0.5 * Delta_N1) / (Nm1 - 0.5 * Delta_N1)); Sfl = Sfl + (NFB_i + NFC_i * (Nm1 - 2.0 * N1)) * Delta_N1; Sfl = Sfl_prefac * Ids * Gvsatinv * Sfl / N1; H0 = qim1 / alpha; t1 = qim / qim1; sqt2 = 0.5 * `oneSixth * (dps / H0); t2 = sqt2 * sqt2; r = H0 / H - 1.0; lc = `CLIP_LOW(1.0 - 12 * (r * t2), 1e-20); lcinv2 = 1 / (lc * lc); g_ideal = BET_i * (FdL * qim1 * Gvsatinv); CGeff = Gvsat * Gvsat * COX_qm * eta_p / (Gmob_dL * Gmob_dL); mid = t1 + 12 * t2 - 24 * ((1.0 + t1) * t2 * r); mid = `CLIP_LOW(mid, 1e-40); mid = g_ideal * lcinv2 * mid; mig = t1 / 12 - t2 * (t1 + 0.2 - 12 * t2) - 1.6 * (t2 * (t1 + 1.0 - 12 * t2) * r); mig = `CLIP_LOW(mig, 1e-40); mig = lcinv2 / g_ideal * mig; migid = lcinv2 * sqt2 * (1.0 - 12 * t2 - (t1 + 19.2 * t2 - 12 * (t1 * t2)) * r); sqid = sqrt(MULT_i * nt * mid); sqig = sqrt(MULT_i * nt / mig); c_igid = (sqid == 0) ? 0.0 : (migid * sqig / sqid); // = migid / sqrt(mig * mid); c_igid = `CLIP_BOTH(c_igid, 0.0, 1.0); end shot_igsx = 2.0 * `QELE * abs(Igse); shot_igdx = 2.0 * `QELE * abs(Igde); shot_iavl = 2.0 * `QELE * ((mavl + 1) * abs(Iimpacte)); // JUNCAP2 sjnoisex = 2.0 * `QELE * abs(isjun); djnoisex = 2.0 * `QELE * abs(idjun); if (sigVds > 0) begin shot_igs = shot_igsx; shot_igd = shot_igdx; sjnoise = sjnoisex; djnoise = djnoisex + shot_iavl; end else begin shot_igs = shot_igdx; shot_igd = shot_igsx; sjnoise = sjnoisex + shot_iavl; djnoise = djnoisex; end `ifdef NQSmodel rgatenoise = nt0 * ggate; rbulknoise = nt0 * gbulk; rjunsnoise = nt0 * gjuns; rjundnoise = nt0 * gjund; rwellnoise = nt0 * gwell; `endif // NQSmodel // Important note: // In Verilog-A, correlated noise sources can only be implemented by using two additional // internal nodes (NOI and NOI2). When implementing PSP in a circuit simlutor, it is // generally not necessary to retain these internal nodes and therefore (for execution // speed reasons) should be avoided. // Noise contribs I(NOI2) <+ V(NOI2); I(NOI2) <+ white_noise(c_igid); I(NOII) <+ white_noise(sqig * sqig * (1.0 - c_igid)); I(NOII) <+ -sqig * V(NOI2); I(NOIR) <+ V(NOIR); I(NOIC) <+ ddt(mig * CGeff * V(NOIC)); I(D,S) <+ flicker_noise(MULT_i * Sfl, 1.0); I(D,S) <+ white_noise(sqid * sqid * (1.0 - c_igid)); I(D,S) <+ sqid * V(NOI2); I(`Gint,S)<+ ddt(0.5 * ((1.0 + sigVds) * mig * CGeff * V(NOIC))); I(`Gint,D)<+ ddt(0.5 * ((1.0 - sigVds) * mig * CGeff * V(NOIC))); I(`Gint,S)<+ white_noise(shot_igs); I(`Gint,D)<+ white_noise(shot_igd); // JUNCAP2 I(`Bjs,S) <+ white_noise(sjnoise, "shot"); I(`Bjd,D) <+ white_noise(djnoise, "shot"); `ifdef NQSmodel // Parasitic resistances I(GP,G) <+ white_noise(rgatenoise); I(BP,BI) <+ white_noise(rbulknoise); I(BS,BI) <+ white_noise(rjunsnoise); I(BD,BI) <+ white_noise(rjundnoise); I(B ,BI) <+ white_noise(rwellnoise); `endif // NQSmodel end // noise `ifdef insideADMS // OPinfo ///////////////////////////////////////////////////////////////////////////// // // Operating point info // ///////////////////////////////////////////////////////////////////////////// begin : OPinfo // The output variables defined below are currently not available in // Verilog-A, but only in the SiMKit-C-code which was generated from // this source. Similar functionality will be available in Verilog-A // from Verilog-A version 2.2 onwards. However, a different syntax is // to be used (see Verilog AMS language reference manual, version 2.2, // november 2004, Accellera). // Auxiliary variables id_op = Idse + Iimpacte + Igidle - Igde; is = -Idse + Igisle - Igse; ig = Igse + Igde + Igbe; ib = -Iimpacte - Igbe - Igidle - Igisle; P_D = 1 + 0.25 * (Gf * kp); facvsb0 = phib + 2 * phit1; facvsb = Vsbstar + facvsb0; sig1k = 2 * `PI * 1000 * CGeff; sig1k = sig1k * sig1k * mig; //////////////////////////////////////////////////////////////////////////////////// // // Actual operation point output variables // //////////////////////////////////////////////////////////////////////////////////// // Note: In this section (and ONLY in this section) `drain' always refers to // the highest-potential end of the channel. Therefore, care has to be // taken for derivatives w.r.t. terminal voltages when sigVds == -1. sdint = sigVds; ctype = CHNL_TYPE; if (sigVds < 0) begin // All variables in the actual model refering to junctions are // not subject to SD-interchange. In the OP-output variables, // SD-interchange is also done for the junctions, so that's // what is happening here. Similar precautions have to be taken // for those variables that are derivatives w.r.t. voltage branches ise = is - idjun; ige = ig; ide = id_op - isjun; ibe = ib + isjun + idjun; ids = Idse; idb = Iimpacte + Igidle - isjun; isb = Igisle - idjun; igs = Igse; igd = Igde; igb = Igbe; igcs = MULT_i * Igcs; igcd = MULT_i * Igcd; iavl = Iimpacte; igisl = Igisle; igidl = Igidle; ijsbot = MULT_i * ABDRAIN_i * idjunbot; ijsgat = MULT_i * LGDRAIN_i * idjungat; ijssti = MULT_i * LSDRAIN_i * idjunsti; ijs = ijsbot + ijsgat + ijssti; ijdbot = MULT_i * ABSOURCE_i * isjunbot; ijdgat = MULT_i * LGSOURCE_i * isjungat; ijdsti = MULT_i * LSSOURCE_i * isjunsti; ijd = ijdbot + ijdgat + ijdsti; vds = Vds; vgs = Vgs; vsb = Vsb; vto = VFB_i + P_D * facvsb0 + Gf * sqrt(phit1 * facvsb0); vts = VFB_i + P_D * facvsb - Vsbstar + Gf * sqrt(phit1 * facvsb ); vth = vts - delVg; vgt = vgs - vth; vdss = Vdsat; vsat = Vds - vdss; temp = Idse + Iimpacte + Igidle - Igde - isjun; // Total drain-current gm = CHNL_TYPE * ddx(temp, V(`Gint, S)); gmb = -CHNL_TYPE * ddx(temp, V(S, `Bint)); gds = -CHNL_TYPE * ddx(temp, V(D, S)) - (gm + gmb); gjs = -ddx(idjun, V(D, `Bjd)); gjd = -ddx(isjun, V(S, `Bjs)); css = CHNL_TYPE * ddx(Qd, V(D, S)); csg = -CHNL_TYPE * ddx(Qd, V(`Gint, S)); csb = CHNL_TYPE * ddx(Qd, V(S, `Bint)); csd = css - csg - csb; cgs = -CHNL_TYPE * ddx(Qg, V(D, S)); cgg = CHNL_TYPE * ddx(Qg, V(`Gint, S)); cgb = CHNL_TYPE * ddx(Qg, V(S, `Bint)); cgd = cgg - cgs - cgb; cds = -CHNL_TYPE * ddx(Qs, V(D, S)); cdg = -CHNL_TYPE * ddx(Qs, V(`Gint, S)); cdb = CHNL_TYPE * ddx(Qs, V(S, `Bint)); cdd = cdg + cds + cdb; cbs = -CHNL_TYPE * ddx(Qb, V(D, S)); cbg = -CHNL_TYPE * ddx(Qb, V(`Gint, S)); cbb = -CHNL_TYPE * ddx(Qb, V(S, `Bint)); cbd = cbb - cbs - cbg; cgsol = -CHNL_TYPE * ddx(Qfgd, V(D, S)); cgdol = CHNL_TYPE * ddx(Qfgs, V(`Gint, S)); cjsbot = -MULT_i * CHNL_TYPE * ABDRAIN_i * ddx(qdjunbot, V(D, `Bjd)); cjsgat = -MULT_i * CHNL_TYPE * LGDRAIN_i * ddx(qdjungat, V(D, `Bjd)); cjssti = -MULT_i * CHNL_TYPE * LSDRAIN_i * ddx(qdjunsti, V(D, `Bjd)); cjs = cjsbot + cjsgat + cjssti; cjdbot = -MULT_i * CHNL_TYPE * ABSOURCE_i * ddx(qsjunbot, V(S, `Bjs)); cjdgat = -MULT_i * CHNL_TYPE * LGSOURCE_i * ddx(qsjungat, V(S, `Bjs)); cjdsti = -MULT_i * CHNL_TYPE * LSSOURCE_i * ddx(qsjunsti, V(S, `Bjs)); cjd = cjdbot + cjdgat + cjdsti; end else begin ise = is - isjun; ige = ig; ide = id_op - idjun; ibe = ib + isjun + idjun; ids = Idse; idb = Iimpacte + Igidle - idjun; isb = Igisle - isjun; igs = Igse; igd = Igde; igb = Igbe; igcs = MULT_i * Igcs; igcd = MULT_i * Igcd; iavl = Iimpacte; igisl = Igisle; igidl = Igidle; ijsbot = MULT_i * ABSOURCE_i * isjunbot; ijsgat = MULT_i * LGSOURCE_i * isjungat; ijssti = MULT_i * LSSOURCE_i * isjunsti; ijs = ijsbot + ijsgat + ijssti; ijdbot = MULT_i * ABDRAIN_i * idjunbot; ijdgat = MULT_i * LGDRAIN_i * idjungat; ijdsti = MULT_i * LSDRAIN_i * idjunsti; ijd = ijdbot + ijdgat + ijdsti; vds = Vds; vgs = Vgs; vsb = Vsb; vto = VFB_i + P_D * facvsb0 + Gf * sqrt(phit1 * facvsb0); vts = VFB_i + P_D * facvsb - Vsbstar + Gf * sqrt(phit1 * facvsb ); vth = vts - delVg; vgt = vgs - vth; vdss = Vdsat; vsat = Vds - vdss; temp = Idse + Iimpacte + Igidle - Igde - idjun; gm = CHNL_TYPE * ddx(temp, V(`Gint, S)); gmb = -CHNL_TYPE * ddx(temp, V(S, `Bint)); gds = CHNL_TYPE * ddx(temp, V(D, S)); gjs = -ddx(isjun, V(S, `Bjs)); gjd = -ddx(idjun, V(D, `Bjd)); cdd = CHNL_TYPE * ddx(Qd, V(D, S)); cdg = -CHNL_TYPE * ddx(Qd, V(`Gint, S)); cdb = CHNL_TYPE * ddx(Qd, V(S, `Bint)); cds = cdd - cdg - cdb; cgd = -CHNL_TYPE * ddx(Qg, V(D, S)); cgg = CHNL_TYPE * ddx(Qg, V(`Gint, S)); cgb = CHNL_TYPE * ddx(Qg, V(S, `Bint)); cgs = cgg - cgd - cgb; csd = -CHNL_TYPE * ddx(Qs, V(D, S)); csg = -CHNL_TYPE * ddx(Qs, V(`Gint, S)); csb = CHNL_TYPE * ddx(Qs, V(S, `Bint)); css = csg + csd + csb; cbd = -CHNL_TYPE * ddx(Qb, V(D, S)); cbg = -CHNL_TYPE * ddx(Qb, V(`Gint, S)); cbb = -CHNL_TYPE * ddx(Qb, V(S, `Bint)); cbs = cbb - cbd - cbg; cgsol = CHNL_TYPE * ddx(Qfgs, V(`Gint, S)); cgdol = -CHNL_TYPE * ddx(Qfgd, V(D, S)); cjsbot = -MULT_i * CHNL_TYPE * ABSOURCE_i * ddx(qsjunbot, V(S, `Bjs)); cjsgat = -MULT_i * CHNL_TYPE * LGSOURCE_i * ddx(qsjungat, V(S, `Bjs)); cjssti = -MULT_i * CHNL_TYPE * LSSOURCE_i * ddx(qsjunsti, V(S, `Bjs)); cjs = cjsbot + cjsgat + cjssti; cjdbot = -MULT_i * CHNL_TYPE * ABDRAIN_i * ddx(qdjunbot, V(D, `Bjd)); cjdgat = -MULT_i * CHNL_TYPE * LGDRAIN_i * ddx(qdjungat, V(D, `Bjd)); cjdsti = -MULT_i * CHNL_TYPE * LSDRAIN_i * ddx(qdjunsti, V(D, `Bjd)); cjd = cjdbot + cjdgat + cjdsti; end `ifdef LocalModel weff = 0; leff = 0; `else weff = WE; leff = LE; `endif u = (abs(gds) < 1e-18) ? 0 : (gm / gds); rout = (abs(gds) < 1e-18) ? 0 : (1.0 / gds); vearly = (abs(gds) < 1e-18) ? 0 : (ide / gds); beff = (abs(vgt) < 1e-12) ? 0 : (2 * abs(ide) / (vgt * vgt)); fug = (abs(cgg + cgsol + cgdol) < 1e-30) ? 0.0 : gm / (2 * `PI * (cgg + cgsol + cgdol)); sfl = Sfl; sqrtsff = (abs(gm) < 1e-18) ? 0 : (sqrt(MULT_i * Sfl / 1000) / gm); sqrtsfw = (abs(gm) < 1e-18) ? 0 : (sqid / gm); sid = sqid * sqid; sig = MULT_i * nt * sig1k / (1 + sig1k * mig); cigid = c_igid; fknee = (sid == 0) ? 0 : Sfl / sid; sigs = shot_igsx; sigd = shot_igdx; siavl = shot_iavl; if (sigVds < 0) begin ssi = djnoisex; sdi = sjnoisex; end else begin ssi = sjnoisex; sdi = djnoisex; end end // OPinfo `endif // OPinfo end // analogBlock