/********** Copyright 1990 Regents of the University of California. All rights reserved. Author: 1985 Thomas L. Quarles Modified: 2000 AlansFIxes **********/ #include "ngspice/ngspice.h" #include "ngspice/devdefs.h" #include "ngspice/ifsim.h" #include "mos2defs.h" #include "ngspice/suffix.h" IFparm MOS2pTable[] = { /* parameters */ IOPU("m", MOS2_M, IF_REAL , "Multiplier"), IOPU("l", MOS2_L, IF_REAL , "Length"), IOPU("w", MOS2_W, IF_REAL , "Width"), IOPU("ad", MOS2_AD, IF_REAL , "Drain area"), IOPU("as", MOS2_AS, IF_REAL , "Source area"), IOPU("pd", MOS2_PD, IF_REAL , "Drain perimeter"), IOPU("ps", MOS2_PS, IF_REAL , "Source perimeter"), OP( "id", MOS2_CD, IF_REAL,"Drain current"), OPR( "cd", MOS2_CD, IF_REAL,""), OP( "ibd", MOS2_CBD, IF_REAL, "B-D junction current"), OP( "ibs", MOS2_CBS, IF_REAL, "B-S junction current"), OP( "is", MOS2_CS, IF_REAL, "Source current "), OP( "ig", MOS2_CG, IF_REAL, "Gate current "), OP( "ib", MOS2_CB, IF_REAL, "Bulk current "), OP( "vgs", MOS2_VGS, IF_REAL, "Gate-Source voltage"), OP( "vds", MOS2_VDS, IF_REAL, "Drain-Source voltage"), OP( "vbs", MOS2_VBS, IF_REAL, "Bulk-Source voltage"), OPU( "vbd", MOS2_VBD, IF_REAL, "Bulk-Drain voltage"), IOPU("nrd", MOS2_NRD, IF_REAL , "Drain squares"), IOPU("nrs", MOS2_NRS, IF_REAL , "Source squares"), IP("off", MOS2_OFF, IF_FLAG , "Device initially off"), IOPAU("icvds", MOS2_IC_VDS,IF_REAL , "Initial D-S voltage"), IOPAU("icvgs", MOS2_IC_VGS,IF_REAL , "Initial G-S voltage"), IOPAU("icvbs", MOS2_IC_VBS,IF_REAL , "Initial B-S voltage"), IOPU("temp", MOS2_TEMP, IF_REAL ,"Instance operating temperature"), IOPU("dtemp", MOS2_DTEMP, IF_REAL , "Instance temperature difference"), IP( "ic", MOS2_IC, IF_REALVEC, "Vector of D-S, G-S, B-S voltages"), IP( "sens_l", MOS2_L_SENS,IF_FLAG, "flag to request sensitivity WRT length"), IP( "sens_w", MOS2_W_SENS,IF_FLAG, "flag to request sensitivity WRT width"), /* OP( "cgs", MOS2_CGS, IF_REAL , "Gate-Source capacitance"), OP( "cgd", MOS2_CGD, IF_REAL , "Gate-Drain capacitance"), */ OPU( "dnode", MOS2_DNODE, IF_INTEGER, "Number of drain node"), OPU( "gnode", MOS2_GNODE, IF_INTEGER, "Number of gate node"), OPU( "snode", MOS2_SNODE, IF_INTEGER, "Number of source node"), OPU( "bnode", MOS2_BNODE, IF_INTEGER, "Number of bulk node"), OPU( "dnodeprime", MOS2_DNODEPRIME, IF_INTEGER, "Number of internal drain node"), OPU( "snodeprime", MOS2_SNODEPRIME, IF_INTEGER, "Number of internal source node"), OP( "von", MOS2_VON, IF_REAL, " "), OP( "vdsat", MOS2_VDSAT, IF_REAL,"Saturation drain voltage"), OPU( "sourcevcrit", MOS2_SOURCEVCRIT, IF_REAL,"Critical source voltage"), OPU( "drainvcrit", MOS2_DRAINVCRIT, IF_REAL,"Critical drain voltage"), OP( "rs", MOS2_SOURCERESIST, IF_REAL, "Source resistance"), OPU( "sourceconductance", MOS2_SOURCECONDUCT, IF_REAL, "Source conductance"), OP( "rd", MOS2_DRAINRESIST, IF_REAL, "Drain resistance"), OPU( "drainconductance", MOS2_DRAINCONDUCT, IF_REAL, "Drain conductance"), OP( "gm", MOS2_GM, IF_REAL, "Transconductance"), OP( "gds", MOS2_GDS, IF_REAL, "Drain-Source conductance"), OP( "gmb", MOS2_GMBS, IF_REAL, "Bulk-Source transconductance"), OPR( "gmbs", MOS2_GMBS, IF_REAL, ""), OPU( "gbd", MOS2_GBD, IF_REAL, "Bulk-Drain conductance"), OPU( "gbs", MOS2_GBS, IF_REAL, "Bulk-Source conductance"), OP( "cbd", MOS2_CAPBD, IF_REAL, "Bulk-Drain capacitance"), OP( "cbs", MOS2_CAPBS, IF_REAL, "Bulk-Source capacitance"), OP( "cgs", MOS2_CAPGS, IF_REAL, "Gate-Source capacitance"), OP( "cgd", MOS2_CAPGD, IF_REAL, "Gate-Drain capacitance"), OP( "cgb", MOS2_CAPGB, IF_REAL, "Gate-Bulk capacitance"), OPU( "cbd0", MOS2_CAPZEROBIASBD, IF_REAL,"Zero-Bias B-D junction capacitance"), OPU( "cbdsw0",MOS2_CAPZEROBIASBDSW,IF_REAL, " "), OPU( "cbs0", MOS2_CAPZEROBIASBS, IF_REAL,"Zero-Bias B-S junction capacitance"), OPU( "cbssw0", MOS2_CAPZEROBIASBSSW,IF_REAL," "), OPU("cqgs",MOS2_CQGS,IF_REAL,"Capacitance due to gate-source charge storage"), OPU("cqgd",MOS2_CQGD,IF_REAL,"Capacitance due to gate-drain charge storage"), OPU("cqgb",MOS2_CQGB,IF_REAL,"Capacitance due to gate-bulk charge storage"), OPU("cqbd",MOS2_CQBD,IF_REAL,"Capacitance due to bulk-drain charge storage"), OPU("cqbs",MOS2_CQBS,IF_REAL,"Capacitance due to bulk-source charge storage"), OPU( "qgs", MOS2_QGS, IF_REAL, "Gate-Source charge storage"), OPU( "qgd", MOS2_QGD, IF_REAL, "Gate-Drain charge storage"), OPU( "qgb", MOS2_QGB, IF_REAL, "Gate-Bulk charge storage"), OPU( "qbd", MOS2_QBD, IF_REAL, "Bulk-Drain charge storage"), OPU( "qbs", MOS2_QBS, IF_REAL, "Bulk-Source charge storage"), OPU( "p", MOS2_POWER, IF_REAL, "Instantaneous power "), OPU( "sens_l_dc", MOS2_L_SENS_DC, IF_REAL, "dc sensitivity wrt length"), OPU( "sens_l_real", MOS2_L_SENS_REAL, IF_REAL, "real part of ac sensitivity wrt length"), OPU( "sens_l_imag", MOS2_L_SENS_IMAG, IF_REAL, "imag part of ac sensitivity wrt length"), OPU( "sens_l_cplx", MOS2_L_SENS_CPLX, IF_COMPLEX, "ac sensitivity wrt length"), OPU( "sens_l_mag", MOS2_L_SENS_MAG, IF_REAL, "sensitivity wrt l of ac magnitude"), OPU( "sens_l_ph", MOS2_L_SENS_PH, IF_REAL, "sensitivity wrt l of ac phase"), OPU( "sens_w_dc", MOS2_W_SENS_DC, IF_REAL, "dc sensitivity wrt width"), OPU( "sens_w_real", MOS2_W_SENS_REAL, IF_REAL, "dc sensitivity and real part of ac sensitivity wrt width"), OPU( "sens_w_imag", MOS2_W_SENS_IMAG, IF_REAL, "imag part of ac sensitivity wrt width"), OPU( "sens_w_mag", MOS2_W_SENS_MAG, IF_REAL, "sensitivity wrt w of ac magnitude"), OPU( "sens_w_ph", MOS2_W_SENS_PH, IF_REAL, "sensitivity wrt w of ac phase"), OPU( "sens_w_cplx", MOS2_W_SENS_CPLX, IF_COMPLEX, "ac sensitivity wrt width") }; IFparm MOS2mPTable[] = { /* model parameters */ OP("type", MOS2_MOD_TYPE, IF_STRING ,"N-channel or P-channel MOS"), IOP("vto", MOS2_MOD_VTO, IF_REAL ,"Threshold voltage"), IOPR("vt0", MOS2_MOD_VTO, IF_REAL ,"Threshold voltage"), IOP("kp", MOS2_MOD_KP, IF_REAL ,"Transconductance parameter"), IOP("gamma", MOS2_MOD_GAMMA, IF_REAL ,"Bulk threshold parameter"), IOP("phi", MOS2_MOD_PHI, IF_REAL ,"Surface potential"), IOP("lambda",MOS2_MOD_LAMBDA,IF_REAL ,"Channel length modulation"), IOP("rd", MOS2_MOD_RD, IF_REAL ,"Drain ohmic resistance"), IOP("rs", MOS2_MOD_RS, IF_REAL ,"Source ohmic resistance"), IOP("cbd", MOS2_MOD_CBD, IF_REAL ,"B-D junction capacitance"), IOP("cbs", MOS2_MOD_CBS, IF_REAL ,"B-S junction capacitance"), IOP("is", MOS2_MOD_IS, IF_REAL ,"Bulk junction sat. current"), IOP("pb", MOS2_MOD_PB, IF_REAL ,"Bulk junction potential"), IOPA("cgso", MOS2_MOD_CGSO, IF_REAL ,"Gate-source overlap cap."), IOPA("cgdo", MOS2_MOD_CGDO, IF_REAL ,"Gate-drain overlap cap."), IOPA("cgbo", MOS2_MOD_CGBO, IF_REAL ,"Gate-bulk overlap cap."), IOP("rsh", MOS2_MOD_RSH, IF_REAL ,"Sheet resistance"), IOPA("cj", MOS2_MOD_CJ, IF_REAL ,"Bottom junction cap per area"), IOP("mj", MOS2_MOD_MJ, IF_REAL ,"Bottom grading coefficient"), IOPA("cjsw", MOS2_MOD_CJSW, IF_REAL ,"Side junction cap per area"), IOP("mjsw", MOS2_MOD_MJSW, IF_REAL ,"Side grading coefficient"), IOP("js", MOS2_MOD_JS, IF_REAL ,"Bulk jct. sat. current density"), IOP("tox", MOS2_MOD_TOX, IF_REAL ,"Oxide thickness"), IOP("ld", MOS2_MOD_LD, IF_REAL ,"Lateral diffusion"), IOP("u0", MOS2_MOD_U0, IF_REAL ,"Surface mobility"), IOPR("uo", MOS2_MOD_U0, IF_REAL ,"Surface mobility"), IOP("fc", MOS2_MOD_FC, IF_REAL ,"Forward bias jct. fit parm."), IP("nmos", MOS2_MOD_NMOS, IF_FLAG ,"N type MOSfet model"), IP("pmos", MOS2_MOD_PMOS, IF_FLAG ,"P type MOSfet model"), IOP("nsub", MOS2_MOD_NSUB, IF_REAL ,"Substrate doping"), IOP("tpg", MOS2_MOD_TPG, IF_INTEGER,"Gate type"), IOP("nss", MOS2_MOD_NSS, IF_REAL ,"Surface state density"), IOP("delta", MOS2_MOD_DELTA, IF_REAL ,"Width effect on threshold"), IOP("uexp", MOS2_MOD_UEXP, IF_REAL ,"Crit. field exp for mob. deg."), IOP("ucrit", MOS2_MOD_UCRIT, IF_REAL ,"Crit. field for mob. degradation"), IOP("vmax", MOS2_MOD_VMAX, IF_REAL ,"Maximum carrier drift velocity"), IOP("xj", MOS2_MOD_XJ, IF_REAL ,"Junction depth"), IOP("neff", MOS2_MOD_NEFF, IF_REAL ,"Total channel charge coeff."), IOP("nfs", MOS2_MOD_NFS, IF_REAL ,"Fast surface state density"), IOPU("tnom", MOS2_MOD_TNOM, IF_REAL ,"Parameter measurement temperature"), IOP("kf", MOS2_MOD_KF, IF_REAL ,"Flicker noise coefficient"), IOP("af", MOS2_MOD_AF, IF_REAL ,"Flicker noise exponent") }; char *MOS2names[] = { "Drain", "Gate", "Source", "Bulk" }; int MOS2nSize = NUMELEMS(MOS2names); int MOS2pTSize = NUMELEMS(MOS2pTable); int MOS2mPTSize = NUMELEMS(MOS2mPTable); int MOS2iSize = sizeof(MOS2instance); int MOS2mSize = sizeof(MOS2model);