/********** Copyright 1990 Regents of the University of California. All rights reserved. Author: 1987 Thomas L. Quarles Modified: 2000 AlansFixes **********/ #include "ngspice/ngspice.h" #include "ngspice/devdefs.h" #include "ngspice/ifsim.h" #include "mos3defs.h" #include "ngspice/suffix.h" IFparm MOS3pTable[] = { /* parameters */ IOPU("m", MOS3_M, IF_REAL , "Multiplier"), IOPU("l", MOS3_L, IF_REAL , "Length"), IOPU("w", MOS3_W, IF_REAL , "Width"), IOPU("ad", MOS3_AD, IF_REAL , "Drain area"), IOPU("as", MOS3_AS, IF_REAL , "Source area"), IOPU("pd", MOS3_PD, IF_REAL , "Drain perimeter"), IOPU("ps", MOS3_PS, IF_REAL , "Source perimeter"), OP("id", MOS3_CD, IF_REAL, "Drain current"), OPR("cd", MOS3_CD, IF_REAL, "Drain current"), OPU("ibd", MOS3_CBD, IF_REAL, "B-D junction current"), OPU("ibs", MOS3_CBS, IF_REAL, "B-S junction current"), OPU("is", MOS3_CS, IF_REAL, "Source current"), OPU("ig", MOS3_CG, IF_REAL, "Gate current"), OPU("ib", MOS3_CB, IF_REAL, "Bulk current"), OP("vgs", MOS3_VGS, IF_REAL, "Gate-Source voltage"), OP("vds", MOS3_VDS, IF_REAL, "Drain-Source voltage"), OP("vbs", MOS3_VBS, IF_REAL, "Bulk-Source voltage"), OPU("vbd", MOS3_VBD, IF_REAL, "Bulk-Drain voltage"), IOPU("nrd", MOS3_NRD, IF_REAL , "Drain squares"), IOPU("nrs", MOS3_NRS, IF_REAL , "Source squares"), IP("off", MOS3_OFF, IF_FLAG , "Device initially off"), IOPAU("icvds", MOS3_IC_VDS, IF_REAL , "Initial D-S voltage"), IOPAU("icvgs", MOS3_IC_VGS, IF_REAL , "Initial G-S voltage"), IOPAU("icvbs", MOS3_IC_VBS, IF_REAL , "Initial B-S voltage"), IOPU("ic", MOS3_IC, IF_REALVEC, "Vector of D-S, G-S, B-S voltages"), IOPU("temp", MOS3_TEMP, IF_REAL , "Instance operating temperature"), IOPU("dtemp", MOS3_DTEMP, IF_REAL , "Instance temperature difference"), IP("sens_l", MOS3_L_SENS, IF_FLAG, "flag to request sensitivity WRT length"), IP("sens_w", MOS3_W_SENS, IF_FLAG, "flag to request sensitivity WRT width"), OPU("dnode", MOS3_DNODE, IF_INTEGER, "Number of drain node"), OPU("gnode", MOS3_GNODE, IF_INTEGER, "Number of gate node"), OPU("snode", MOS3_SNODE, IF_INTEGER, "Number of source node"), OPU("bnode", MOS3_BNODE, IF_INTEGER, "Number of bulk node"), OPU("dnodeprime", MOS3_DNODEPRIME,IF_INTEGER,"Number of internal drain node"), OPU("snodeprime", MOS3_SNODEPRIME,IF_INTEGER,"Number of internal source node"), OP("von", MOS3_VON, IF_REAL, "Turn-on voltage"), OP("vdsat", MOS3_VDSAT, IF_REAL, "Saturation drain voltage"), OPU("sourcevcrit", MOS3_SOURCEVCRIT, IF_REAL, "Critical source voltage"), OPU("drainvcrit", MOS3_DRAINVCRIT, IF_REAL, "Critical drain voltage"), OP("rs", MOS3_SOURCERESIST, IF_REAL, "Source resistance"), OPU("sourceconductance", MOS3_SOURCECONDUCT, IF_REAL, "Source conductance"), OP("rd", MOS3_DRAINRESIST, IF_REAL, "Drain resistance"), OPU("drainconductance", MOS3_DRAINCONDUCT, IF_REAL, "Drain conductance"), OP("gm", MOS3_GM, IF_REAL, "Transconductance"), OP("gds", MOS3_GDS, IF_REAL, "Drain-Source conductance"), OP("gmb", MOS3_GMBS, IF_REAL, "Bulk-Source transconductance"), OPR("gmbs", MOS3_GMBS, IF_REAL, "Bulk-Source transconductance"), OPU("gbd", MOS3_GBD, IF_REAL, "Bulk-Drain conductance"), OPU("gbs", MOS3_GBS, IF_REAL, "Bulk-Source conductance"), OP("cbd", MOS3_CAPBD, IF_REAL, "Bulk-Drain capacitance"), OP("cbs", MOS3_CAPBS, IF_REAL, "Bulk-Source capacitance"), OP("cgs", MOS3_CAPGS, IF_REAL, "Gate-Source capacitance"), /* OPR("cgs", MOS3_CGS, IF_REAL , "Gate-Source capacitance"),*/ OP("cgd", MOS3_CAPGD, IF_REAL, "Gate-Drain capacitance"), /* OPR("cgd", MOS3_CGD, IF_REAL , "Gate-Drain capacitance"),*/ OP("cgb", MOS3_CAPGB, IF_REAL, "Gate-Bulk capacitance"), OPU("cqgs",MOS3_CQGS,IF_REAL,"Capacitance due to gate-source charge storage"), OPU("cqgd",MOS3_CQGD, IF_REAL,"Capacitance due to gate-drain charge storage"), OPU("cqgb",MOS3_CQGB, IF_REAL,"Capacitance due to gate-bulk charge storage"), OPU("cqbd",MOS3_CQBD,IF_REAL,"Capacitance due to bulk-drain charge storage"), OPU("cqbs",MOS3_CQBS,IF_REAL,"Capacitance due to bulk-source charge storage"), OPU("cbd0",MOS3_CAPZEROBIASBD,IF_REAL,"Zero-Bias B-D junction capacitance"), OPU("cbdsw0",MOS3_CAPZEROBIASBDSW,IF_REAL, "Zero-Bias B-D sidewall capacitance"), OPU("cbs0",MOS3_CAPZEROBIASBS,IF_REAL,"Zero-Bias B-S junction capacitance"), OPU("cbssw0",MOS3_CAPZEROBIASBSSW,IF_REAL, "Zero-Bias B-S sidewall capacitance"), OPU("qbs", MOS3_QBS, IF_REAL, "Bulk-Source charge storage"), OPU("qgs", MOS3_QGS, IF_REAL, "Gate-Source charge storage"), OPU("qgd", MOS3_QGD, IF_REAL, "Gate-Drain charge storage"), OPU("qgb", MOS3_QGB, IF_REAL, "Gate-Bulk charge storage"), OPU("qbd", MOS3_QBD, IF_REAL, "Bulk-Drain charge storage"), OPU("p", MOS3_POWER, IF_REAL, "Instantaneous power"), OPU("sens_l_dc", MOS3_L_SENS_DC, IF_REAL, "dc sensitivity wrt length"), OPU("sens_l_real",MOS3_L_SENS_REAL, IF_REAL, "real part of ac sensitivity wrt length"), OPU("sens_l_imag",MOS3_L_SENS_IMAG, IF_REAL, "imag part of ac sensitivity wrt length"), OPU("sens_l_cplx",MOS3_L_SENS_CPLX, IF_COMPLEX, "ac sensitivity wrt length"), OPU("sens_l_mag", MOS3_L_SENS_MAG, IF_REAL, "sensitivity wrt l of ac magnitude"), OPU("sens_l_ph", MOS3_L_SENS_PH, IF_REAL, "sensitivity wrt l of ac phase"), OPU("sens_w_dc", MOS3_W_SENS_DC, IF_REAL, "dc sensitivity wrt width"), OPU("sens_w_real",MOS3_W_SENS_REAL, IF_REAL, "real part of ac sensitivity wrt width"), OPU("sens_w_imag",MOS3_W_SENS_IMAG, IF_REAL, "imag part of ac sensitivity wrt width"), OPU("sens_w_mag", MOS3_W_SENS_MAG, IF_REAL, "sensitivity wrt w of ac magnitude"), OPU("sens_w_ph", MOS3_W_SENS_PH, IF_REAL, "sensitivity wrt w of ac phase"), OPU("sens_w_cplx",MOS3_W_SENS_CPLX, IF_COMPLEX, "ac sensitivity wrt width") }; IFparm MOS3mPTable[] = { /* model parameters */ OP("type", MOS3_MOD_TYPE, IF_STRING ,"N-channel or P-channel MOS"), IP("nmos", MOS3_MOD_NMOS, IF_FLAG ,"N type MOSfet model"), IP("pmos", MOS3_MOD_PMOS, IF_FLAG ,"P type MOSfet model"), IOP("vto", MOS3_MOD_VTO, IF_REAL ,"Threshold voltage"), IOPR("vt0", MOS3_MOD_VTO, IF_REAL ,"Threshold voltage"), IOP("kp", MOS3_MOD_KP, IF_REAL ,"Transconductance parameter"), IOP("gamma", MOS3_MOD_GAMMA, IF_REAL ,"Bulk threshold parameter"), IOP("phi", MOS3_MOD_PHI, IF_REAL ,"Surface potential"), IOP("rd", MOS3_MOD_RD, IF_REAL ,"Drain ohmic resistance"), IOP("rs", MOS3_MOD_RS, IF_REAL ,"Source ohmic resistance"), IOPA("cbd", MOS3_MOD_CBD, IF_REAL ,"B-D junction capacitance"), IOPA("cbs", MOS3_MOD_CBS, IF_REAL ,"B-S junction capacitance"), IOP("is", MOS3_MOD_IS, IF_REAL ,"Bulk junction sat. current"), IOP("pb", MOS3_MOD_PB, IF_REAL ,"Bulk junction potential"), IOPA("cgso", MOS3_MOD_CGSO, IF_REAL ,"Gate-source overlap cap."), IOPA("cgdo", MOS3_MOD_CGDO, IF_REAL ,"Gate-drain overlap cap."), IOPA("cgbo", MOS3_MOD_CGBO, IF_REAL ,"Gate-bulk overlap cap."), IOP("rsh", MOS3_MOD_RSH, IF_REAL ,"Sheet resistance"), IOPA("cj", MOS3_MOD_CJ, IF_REAL ,"Bottom junction cap per area"), IOP("mj", MOS3_MOD_MJ, IF_REAL ,"Bottom grading coefficient"), IOPA("cjsw", MOS3_MOD_CJSW, IF_REAL ,"Side junction cap per area"), IOP("mjsw", MOS3_MOD_MJSW, IF_REAL ,"Side grading coefficient"), IOPU("js", MOS3_MOD_JS, IF_REAL ,"Bulk jct. sat. current density"), IOP("tox", MOS3_MOD_TOX, IF_REAL ,"Oxide thickness"), IOP("ld", MOS3_MOD_LD, IF_REAL ,"Lateral diffusion"), IOP("xl", MOS3_MOD_XL, IF_REAL ,"Length mask adjustment"), IOP("wd", MOS3_MOD_WD, IF_REAL ,"Width Narrowing (Diffusion)"), IOP("xw", MOS3_MOD_XW, IF_REAL ,"Width mask adjustment"), IOPU("delvto", MOS3_MOD_DELVTO, IF_REAL ,"Threshold voltage Adjust"), IOPR("delvt0", MOS3_MOD_DELVTO, IF_REAL ,"Threshold voltage Adjust"), IOP("u0", MOS3_MOD_U0, IF_REAL ,"Surface mobility"), IOPR("uo", MOS3_MOD_U0, IF_REAL ,"Surface mobility"), IOP("fc", MOS3_MOD_FC, IF_REAL ,"Forward bias jct. fit parm."), IOP("nsub", MOS3_MOD_NSUB, IF_REAL ,"Substrate doping"), IOP("tpg", MOS3_MOD_TPG, IF_INTEGER,"Gate type"), IOP("nss", MOS3_MOD_NSS, IF_REAL ,"Surface state density"), IOP("vmax", MOS3_MOD_VMAX, IF_REAL ,"Maximum carrier drift velocity"), IOP("xj", MOS3_MOD_XJ, IF_REAL ,"Junction depth"), IOP("nfs", MOS3_MOD_NFS, IF_REAL ,"Fast surface state density"), IOP("xd", MOS3_MOD_XD, IF_REAL ,"Depletion layer width"), IOP("alpha", MOS3_MOD_ALPHA, IF_REAL ,"Alpha"), IOP("eta", MOS3_MOD_ETA, IF_REAL ,"Vds dependence of threshold voltage"), IOP("delta", MOS3_MOD_DELTA, IF_REAL ,"Width effect on threshold"), IOPR("input_delta", MOS3_DELTA, IF_REAL ,""), IOP("theta", MOS3_MOD_THETA, IF_REAL ,"Vgs dependence on mobility"), IOP("kappa", MOS3_MOD_KAPPA, IF_REAL ,"Kappa"), IOPU("tnom", MOS3_MOD_TNOM, IF_REAL ,"Parameter measurement temperature"), IOP("kf", MOS3_MOD_KF, IF_REAL ,"Flicker noise coefficient"), IOP("af", MOS3_MOD_AF, IF_REAL ,"Flicker noise exponent") }; char *MOS3names[] = { "Drain", "Gate", "Source", "Bulk" }; int MOS3nSize = NUMELEMS(MOS3names); int MOS3pTSize = NUMELEMS(MOS3pTable); int MOS3mPTSize = NUMELEMS(MOS3mPTable); int MOS3iSize = sizeof(MOS3instance); int MOS3mSize = sizeof(MOS3model);