/********** Copyright 1990 Regents of the University of California. All rights reserved. Author: 1989 Takayasu Sakurai **********/ #include "ngspice/ngspice.h" #include "ngspice/devdefs.h" #include "ngspice/ifsim.h" #include "mos6defs.h" #include "ngspice/suffix.h" IFparm MOS6pTable[] = { /* parameters */ IOPU("l", MOS6_L, IF_REAL , "Length"), IOPU("w", MOS6_W, IF_REAL , "Width"), IOPU("m", MOS6_M, IF_REAL , "Parallel Multiplier"), IOPU("ad", MOS6_AD, IF_REAL , "Drain area"), IOPU("as", MOS6_AS, IF_REAL , "Source area"), IOPU("pd", MOS6_PD, IF_REAL , "Drain perimeter"), IOPU("ps", MOS6_PS, IF_REAL , "Source perimeter"), OP( "id", MOS6_CD, IF_REAL, "Drain current"), OPR( "cd", MOS6_CD, IF_REAL, "Drain current"), OP( "is", MOS6_CS, IF_REAL, "Source current"), OP( "ig", MOS6_CG, IF_REAL, "Gate current "), OP( "ib", MOS6_CB, IF_REAL, "Bulk current "), OP( "ibs", MOS6_CBS, IF_REAL, "B-S junction capacitance"), OP( "ibd", MOS6_CBD, IF_REAL, "B-D junction capacitance"), OP( "vgs", MOS6_VGS, IF_REAL, "Gate-Source voltage"), OP( "vds", MOS6_VDS, IF_REAL, "Drain-Source voltage"), OP( "vbs", MOS6_VBS, IF_REAL, "Bulk-Source voltage"), OPU( "vbd", MOS6_VBD, IF_REAL, "Bulk-Drain voltage"), IOPU("nrd", MOS6_NRD, IF_REAL , "Drain squares"), IOPU("nrs", MOS6_NRS, IF_REAL , "Source squares"), IP("off", MOS6_OFF, IF_FLAG , "Device initially off"), IOPAU("icvds", MOS6_IC_VDS, IF_REAL , "Initial D-S voltage"), IOPAU("icvgs", MOS6_IC_VGS, IF_REAL , "Initial G-S voltage"), IOPAU("icvbs", MOS6_IC_VBS, IF_REAL , "Initial B-S voltage"), IOPU("temp", MOS6_TEMP, IF_REAL, "Instance temperature"), IOPU("dtemp", MOS6_DTEMP, IF_REAL, "Instance temperature difference"), IP( "ic", MOS6_IC, IF_REALVEC, "Vector of D-S, G-S, B-S voltages"), IP( "sens_l", MOS6_L_SENS, IF_FLAG, "flag to request sensitivity WRT length"), IP( "sens_w", MOS6_W_SENS, IF_FLAG, "flag to request sensitivity WRT width"), /* OP( "cgs", MOS6_CGS, IF_REAL , "Gate-Source capacitance"), OP( "cgd", MOS6_CGD, IF_REAL , "Gate-Drain capacitance"), */ OPU( "dnode", MOS6_DNODE, IF_INTEGER, "Number of the drain node "), OPU( "gnode", MOS6_GNODE, IF_INTEGER, "Number of the gate node "), OPU( "snode", MOS6_SNODE, IF_INTEGER, "Number of the source node "), OPU( "bnode", MOS6_BNODE, IF_INTEGER, "Number of the node "), OPU( "dnodeprime", MOS6_DNODEPRIME, IF_INTEGER, "Number of int. drain node"), OPU( "snodeprime", MOS6_SNODEPRIME, IF_INTEGER, "Number of int. source node "), OP( "rs", MOS6_SOURCERESIST, IF_REAL, "Source resistance"), OPU("sourceconductance", MOS6_SOURCECONDUCT, IF_REAL, "Source conductance"), OP( "rd", MOS6_DRAINRESIST, IF_REAL, "Drain resistance"), OPU( "drainconductance", MOS6_DRAINCONDUCT, IF_REAL, "Drain conductance"), OP( "von", MOS6_VON, IF_REAL, "Turn-on voltage"), OP( "vdsat", MOS6_VDSAT, IF_REAL, "Saturation drain voltage"), OPU( "sourcevcrit", MOS6_SOURCEVCRIT,IF_REAL, "Critical source voltage"), OPU( "drainvcrit", MOS6_DRAINVCRIT, IF_REAL, "Critical drain voltage"), OP( "gmbs", MOS6_GMBS, IF_REAL, "Bulk-Source transconductance"), OP( "gm", MOS6_GM, IF_REAL, "Transconductance"), OP( "gds", MOS6_GDS, IF_REAL, "Drain-Source conductance"), OP( "gbd", MOS6_GBD, IF_REAL, "Bulk-Drain conductance"), OP( "gbs", MOS6_GBS, IF_REAL, "Bulk-Source conductance"), OP( "cgs", MOS6_CAPGS, IF_REAL, "Gate-Source capacitance"), OP( "cgd", MOS6_CAPGD, IF_REAL, "Gate-Drain capacitance"), OP( "cgb", MOS6_CAPGB, IF_REAL, "Gate-Bulk capacitance"), OP( "cbd", MOS6_CAPBD, IF_REAL, "Bulk-Drain capacitance"), OP( "cbs", MOS6_CAPBS, IF_REAL, "Bulk-Source capacitance"), OP( "cbd0", MOS6_CAPZEROBIASBD, IF_REAL, "Zero-Bias B-D junction capacitance"), OP( "cbdsw0", MOS6_CAPZEROBIASBDSW, IF_REAL, " "), OP( "cbs0", MOS6_CAPZEROBIASBS, IF_REAL, "Zero-Bias B-S junction capacitance"), OP( "cbssw0", MOS6_CAPZEROBIASBSSW, IF_REAL, " "), OPU( "cqgs",MOS6_CQGS,IF_REAL,"Capacitance due to gate-source charge storage"), OPU( "cqgd",MOS6_CQGD,IF_REAL,"Capacitance due to gate-drain charge storage"), OPU( "cqgb",MOS6_CQGB,IF_REAL,"Capacitance due to gate-bulk charge storage"), OPU( "cqbd",MOS6_CQBD,IF_REAL,"Capacitance due to bulk-drain charge storage"), OPU( "cqbs",MOS6_CQBS,IF_REAL,"Capacitance due to bulk-source charge storage"), OPU( "qgs", MOS6_QGS, IF_REAL, "Gate-Source charge storage"), OPU( "qgd", MOS6_QGD, IF_REAL, "Gate-Drain charge storage"), OPU( "qgb", MOS6_QGB, IF_REAL, "Gate-Bulk charge storage"), OPU( "qbd", MOS6_QBD, IF_REAL, "Bulk-Drain charge storage"), OPU( "qbs", MOS6_QBS, IF_REAL, "Bulk-Source charge storage"), OPU( "p", MOS6_POWER, IF_REAL, "Instaneous power"), OPU( "sens_l_dc", MOS6_L_SENS_DC, IF_REAL, "dc sensitivity wrt length"), OPU( "sens_l_real", MOS6_L_SENS_REAL,IF_REAL, "real part of ac sensitivity wrt length"), OPU( "sens_l_imag", MOS6_L_SENS_IMAG,IF_REAL, "imag part of ac sensitivity wrt length"), OPU( "sens_l_mag", MOS6_L_SENS_MAG, IF_REAL, "sensitivity wrt l of ac magnitude"), OPU( "sens_l_ph", MOS6_L_SENS_PH, IF_REAL, "sensitivity wrt l of ac phase"), OPU( "sens_l_cplx", MOS6_L_SENS_CPLX,IF_COMPLEX, "ac sensitivity wrt length"), OPU( "sens_w_dc", MOS6_W_SENS_DC, IF_REAL, "dc sensitivity wrt width"), OPU( "sens_w_real", MOS6_W_SENS_REAL,IF_REAL, "real part of ac sensitivity wrt width"), OPU( "sens_w_imag", MOS6_W_SENS_IMAG,IF_REAL, "imag part of ac sensitivity wrt width"), OPU( "sens_w_mag", MOS6_W_SENS_MAG, IF_REAL, "sensitivity wrt w of ac magnitude"), OPU( "sens_w_ph", MOS6_W_SENS_PH, IF_REAL, "sensitivity wrt w of ac phase"), OPU( "sens_w_cplx", MOS6_W_SENS_CPLX,IF_COMPLEX, "ac sensitivity wrt width") }; IFparm MOS6mPTable[] = { /* model parameters */ OP("type", MOS6_MOD_TYPE, IF_STRING ,"N-channel or P-channel MOS"), IOP("vto", MOS6_MOD_VTO, IF_REAL ,"Threshold voltage"), IOPR("vt0", MOS6_MOD_VTO, IF_REAL ,"Threshold voltage"), IOP("kv", MOS6_MOD_KV, IF_REAL ,"Saturation voltage factor"), IOP("nv", MOS6_MOD_NV, IF_REAL ,"Saturation voltage coeff."), IOP("kc", MOS6_MOD_KC, IF_REAL ,"Saturation current factor"), IOP("nc", MOS6_MOD_NC, IF_REAL ,"Saturation current coeff."), IOP("nvth", MOS6_MOD_NVTH, IF_REAL ,"Threshold voltage coeff."), IOP("ps", MOS6_MOD_PS, IF_REAL ,"Sat. current modification par."), IOP("gamma", MOS6_MOD_GAMMA, IF_REAL ,"Bulk threshold parameter"), IOP("gamma1",MOS6_MOD_GAMMA1,IF_REAL ,"Bulk threshold parameter 1"), IOP("sigma", MOS6_MOD_SIGMA, IF_REAL ,"Static feedback effect par."), IOP("phi", MOS6_MOD_PHI, IF_REAL ,"Surface potential"), IOP("lambda",MOS6_MOD_LAMBDA,IF_REAL ,"Channel length modulation param."), IOP("lambda0",MOS6_MOD_LAMDA0,IF_REAL ,"Channel length modulation param. 0"), IOP("lambda1",MOS6_MOD_LAMDA1,IF_REAL ,"Channel length modulation param. 1"), IOP("rd", MOS6_MOD_RD, IF_REAL ,"Drain ohmic resistance"), IOP("rs", MOS6_MOD_RS, IF_REAL ,"Source ohmic resistance"), IOPA("cbd", MOS6_MOD_CBD, IF_REAL ,"B-D junction capacitance"), IOPA("cbs", MOS6_MOD_CBS, IF_REAL ,"B-S junction capacitance"), IOP("is", MOS6_MOD_IS, IF_REAL ,"Bulk junction sat. current"), IOP("pb", MOS6_MOD_PB, IF_REAL ,"Bulk junction potential"), IOPA("cgso", MOS6_MOD_CGSO, IF_REAL ,"Gate-source overlap cap."), IOPA("cgdo", MOS6_MOD_CGDO, IF_REAL ,"Gate-drain overlap cap."), IOPA("cgbo", MOS6_MOD_CGBO, IF_REAL ,"Gate-bulk overlap cap."), IOP("rsh", MOS6_MOD_RSH, IF_REAL ,"Sheet resistance"), IOPA("cj", MOS6_MOD_CJ, IF_REAL ,"Bottom junction cap per area"), IOP("mj", MOS6_MOD_MJ, IF_REAL ,"Bottom grading coefficient"), IOPA("cjsw", MOS6_MOD_CJSW, IF_REAL ,"Side junction cap per area"), IOP("mjsw", MOS6_MOD_MJSW, IF_REAL ,"Side grading coefficient"), IOP("js", MOS6_MOD_JS, IF_REAL ,"Bulk jct. sat. current density"), IOP("ld", MOS6_MOD_LD, IF_REAL ,"Lateral diffusion"), IOP("tox", MOS6_MOD_TOX, IF_REAL ,"Oxide thickness"), IOP("u0", MOS6_MOD_U0, IF_REAL ,"Surface mobility"), IOPR("uo", MOS6_MOD_U0, IF_REAL ,"Surface mobility"), IOP("fc", MOS6_MOD_FC, IF_REAL ,"Forward bias jct. fit parm."), IP("nmos", MOS6_MOD_NMOS, IF_FLAG ,"N type MOSfet model"), IP("pmos", MOS6_MOD_PMOS, IF_FLAG ,"P type MOSfet model"), IOP("tpg", MOS6_MOD_TPG, IF_INTEGER,"Gate type"), IOP("nsub", MOS6_MOD_NSUB, IF_REAL ,"Substrate doping"), IOP("nss", MOS6_MOD_NSS, IF_REAL ,"Surface state density"), IOP("tnom", MOS6_MOD_TNOM, IF_REAL ,"Parameter measurement temperature") }; char *MOS6names[] = { "Drain", "Gate", "Source", "Bulk" }; int MOS6nSize = NUMELEMS(MOS6names); int MOS6pTSize = NUMELEMS(MOS6pTable); int MOS6mPTSize = NUMELEMS(MOS6mPTable); int MOS6iSize = sizeof(MOS6instance); int MOS6mSize = sizeof(MOS6model);