/********** Copyright 1990 Regents of the University of California. All rights reserved. Author: 1985 Thomas L. Quarles **********/ #ifndef MOS6 #define MOS6 #include "ngspice/ifsim.h" #include "ngspice/cktdefs.h" #include "ngspice/gendefs.h" #include "ngspice/complex.h" /* declarations for level 5 MOSFETs */ /* information needed for each instance */ typedef struct sMOS6instance { struct sMOS6model *sMOS6modPtr; /* backpointer to model */ struct sMOS6instance *MOS6nextInstance; /* pointer to next instance of *current model*/ IFuid MOS6name; /* pointer to character string naming this instance */ int MOS6states; /* index into state table for this device */ int MOS6dNode; /* number of the gate node of the mosfet */ int MOS6gNode; /* number of the gate node of the mosfet */ int MOS6sNode; /* number of the source node of the mosfet */ int MOS6bNode; /* number of the bulk node of the mosfet */ int MOS6dNodePrime; /* number of the internal drain node of the mosfet */ int MOS6sNodePrime; /* number of the internal source node of the mosfet */ double MOS6l; /* the length of the channel region */ double MOS6w; /* the width of the channel region */ double MOS6m; /* the parallel multiplier */ double MOS6drainArea; /* the area of the drain diffusion */ double MOS6sourceArea; /* the area of the source diffusion */ double MOS6drainSquares; /* the length of the drain in squares */ double MOS6sourceSquares; /* the length of the source in squares */ double MOS6drainPerimiter; double MOS6sourcePerimiter; double MOS6sourceConductance; /*conductance of source(or 0):set in setup*/ double MOS6drainConductance; /*conductance of drain(or 0):set in setup*/ double MOS6temp; /* operating temperature of this instance */ double MOS6dtemp; /* instance temperature difference from circuit */ double MOS6tKv; /* temperature corrected drain linear cond. factor*/ double MOS6tKc; /* temperature corrected saturation cur. factor*/ double MOS6tSurfMob; /* temperature corrected surface mobility */ double MOS6tPhi; /* temperature corrected Phi */ double MOS6tVto; /* temperature corrected Vto */ double MOS6tSatCur; /* temperature corrected saturation Cur. */ double MOS6tSatCurDens; /* temperature corrected saturation Cur. density*/ double MOS6tCbd; /* temperature corrected B-D Capacitance */ double MOS6tCbs; /* temperature corrected B-S Capacitance */ double MOS6tCj; /* temperature corrected Bulk bottom Capacitance */ double MOS6tCjsw; /* temperature corrected Bulk side Capacitance */ double MOS6tBulkPot; /* temperature corrected Bulk potential */ double MOS6tDepCap; /* temperature adjusted transition point in */ /* the cureve matching Fc * Vj */ double MOS6tVbi; /* temperature adjusted Vbi */ double MOS6icVBS; /* initial condition B-S voltage */ double MOS6icVDS; /* initial condition D-S voltage */ double MOS6icVGS; /* initial condition G-S voltage */ double MOS6von; double MOS6vdsat; double MOS6sourceVcrit; /* Vcrit for pos. vds */ double MOS6drainVcrit; /* Vcrit for pos. vds */ double MOS6cd; double MOS6cbs; double MOS6cbd; double MOS6gmbs; double MOS6gm; double MOS6gds; double MOS6gbd; double MOS6gbs; double MOS6capbd; double MOS6capbs; double MOS6Cbd; double MOS6Cbdsw; double MOS6Cbs; double MOS6Cbssw; double MOS6f2d; double MOS6f3d; double MOS6f4d; double MOS6f2s; double MOS6f3s; double MOS6f4s; int MOS6mode; /* device mode : 1 = normal, -1 = inverse */ unsigned MOS6off:1; /* non-zero to indicate device is off for dc analysis*/ unsigned MOS6tempGiven :1; /* instance temperature specified */ unsigned MOS6dtempGiven :1; unsigned MOS6lGiven :1; unsigned MOS6wGiven :1; unsigned MOS6mGiven :1; unsigned MOS6drainAreaGiven :1; unsigned MOS6sourceAreaGiven :1; unsigned MOS6drainSquaresGiven :1; unsigned MOS6sourceSquaresGiven :1; unsigned MOS6drainPerimiterGiven :1; unsigned MOS6sourcePerimiterGiven :1; unsigned MOS6dNodePrimeSet :1; unsigned MOS6sNodePrimeSet :1; unsigned MOS6icVBSGiven :1; unsigned MOS6icVDSGiven :1; unsigned MOS6icVGSGiven :1; unsigned MOS6vonGiven :1; unsigned MOS6vdsatGiven :1; unsigned MOS6modeGiven :1; double *MOS6DdPtr; /* pointer to sparse matrix element at * (Drain node,drain node) */ double *MOS6GgPtr; /* pointer to sparse matrix element at * (gate node,gate node) */ double *MOS6SsPtr; /* pointer to sparse matrix element at * (source node,source node) */ double *MOS6BbPtr; /* pointer to sparse matrix element at * (bulk node,bulk node) */ double *MOS6DPdpPtr; /* pointer to sparse matrix element at * (drain prime node,drain prime node) */ double *MOS6SPspPtr; /* pointer to sparse matrix element at * (source prime node,source prime node) */ double *MOS6DdpPtr; /* pointer to sparse matrix element at * (drain node,drain prime node) */ double *MOS6GbPtr; /* pointer to sparse matrix element at * (gate node,bulk node) */ double *MOS6GdpPtr; /* pointer to sparse matrix element at * (gate node,drain prime node) */ double *MOS6GspPtr; /* pointer to sparse matrix element at * (gate node,source prime node) */ double *MOS6SspPtr; /* pointer to sparse matrix element at * (source node,source prime node) */ double *MOS6BdpPtr; /* pointer to sparse matrix element at * (bulk node,drain prime node) */ double *MOS6BspPtr; /* pointer to sparse matrix element at * (bulk node,source prime node) */ double *MOS6DPspPtr; /* pointer to sparse matrix element at * (drain prime node,source prime node) */ double *MOS6DPdPtr; /* pointer to sparse matrix element at * (drain prime node,drain node) */ double *MOS6BgPtr; /* pointer to sparse matrix element at * (bulk node,gate node) */ double *MOS6DPgPtr; /* pointer to sparse matrix element at * (drain prime node,gate node) */ double *MOS6SPgPtr; /* pointer to sparse matrix element at * (source prime node,gate node) */ double *MOS6SPsPtr; /* pointer to sparse matrix element at * (source prime node,source node) */ double *MOS6DPbPtr; /* pointer to sparse matrix element at * (drain prime node,bulk node) */ double *MOS6SPbPtr; /* pointer to sparse matrix element at * (source prime node,bulk node) */ double *MOS6SPdpPtr; /* pointer to sparse matrix element at * (source prime node,drain prime node) */ int MOS6senParmNo; /* parameter # for sensitivity use; set equal to 0 if neither length nor width of the mosfet is a design parameter */ unsigned MOS6sens_l :1; /* field which indicates whether length of the mosfet is a design parameter or not */ unsigned MOS6sens_w :1; /* field which indicates whether width of the mosfet is a design parameter or not */ unsigned MOS6senPertFlag :1; /* indictes whether the the parameter of the particular instance is to be perturbed */ double MOS6cgs; double MOS6cgd; double MOS6cgb; double *MOS6sens; #define MOS6senCgs MOS6sens /* contains pertured values of cgs */ #define MOS6senCgd MOS6sens + 6 /* contains perturbed values of cgd*/ #define MOS6senCgb MOS6sens + 12 /* contains perturbed values of cgb*/ #define MOS6senCbd MOS6sens + 18 /* contains perturbed values of cbd*/ #define MOS6senCbs MOS6sens + 24 /* contains perturbed values of cbs*/ #define MOS6senGds MOS6sens + 30 /* contains perturbed values of gds*/ #define MOS6senGbs MOS6sens + 36 /* contains perturbed values of gbs*/ #define MOS6senGbd MOS6sens + 42 /* contains perturbed values of gbd*/ #define MOS6senGm MOS6sens + 48 /* contains perturbed values of gm*/ #define MOS6senGmbs MOS6sens + 54 /* contains perturbed values of gmbs*/ #define MOS6dphigs_dl MOS6sens + 60 #define MOS6dphigd_dl MOS6sens + 61 #define MOS6dphigb_dl MOS6sens + 62 #define MOS6dphibs_dl MOS6sens + 63 #define MOS6dphibd_dl MOS6sens + 64 #define MOS6dphigs_dw MOS6sens + 65 #define MOS6dphigd_dw MOS6sens + 66 #define MOS6dphigb_dw MOS6sens + 67 #define MOS6dphibs_dw MOS6sens + 68 #define MOS6dphibd_dw MOS6sens + 69 } MOS6instance ; #define MOS6vbd MOS6states+ 0 /* bulk-drain voltage */ #define MOS6vbs MOS6states+ 1 /* bulk-source voltage */ #define MOS6vgs MOS6states+ 2 /* gate-source voltage */ #define MOS6vds MOS6states+ 3 /* drain-source voltage */ #define MOS6capgs MOS6states+4 /* gate-source capacitor value */ #define MOS6qgs MOS6states+ 5 /* gate-source capacitor charge */ #define MOS6cqgs MOS6states+ 6 /* gate-source capacitor current */ #define MOS6capgd MOS6states+ 7 /* gate-drain capacitor value */ #define MOS6qgd MOS6states+ 8 /* gate-drain capacitor charge */ #define MOS6cqgd MOS6states+ 9 /* gate-drain capacitor current */ #define MOS6capgb MOS6states+10 /* gate-bulk capacitor value */ #define MOS6qgb MOS6states+ 11 /* gate-bulk capacitor charge */ #define MOS6cqgb MOS6states+ 12 /* gate-bulk capacitor current */ #define MOS6qbd MOS6states+ 13 /* bulk-drain capacitor charge */ #define MOS6cqbd MOS6states+ 14 /* bulk-drain capacitor current */ #define MOS6qbs MOS6states+ 15 /* bulk-source capacitor charge */ #define MOS6cqbs MOS6states+ 16 /* bulk-source capacitor current */ #define MOS6numStates 17 #define MOS6sensxpgs MOS6states+17 /* charge sensitivities and their derivatives. +18 for the derivatives: pointer to the beginning of the array */ #define MOS6sensxpgd MOS6states+19 #define MOS6sensxpgb MOS6states+21 #define MOS6sensxpbs MOS6states+23 #define MOS6sensxpbd MOS6states+25 #define MOS6numSenStates 10 /* per model data */ /* NOTE: parameters marked 'input - use xxxx' are paramters for * which a temperature correction is applied in MOS6temp, thus * the MOS6xxxx value in the per-instance structure should be used * instead in all calculations */ typedef struct sMOS6model { /* model structure for a resistor */ int MOS6modType; /* type index to this device type */ struct sMOS6model *MOS6nextModel; /* pointer to next possible model *in linked list */ MOS6instance * MOS6instances; /* pointer to list of instances * that have this model */ IFuid MOS6modName; /* pointer to character string naming this model */ /* --- end of generic struct GENmodel --- */ int MOS6type; /* device type : 1 = nmos, -1 = pmos */ double MOS6tnom; /* temperature at which parameters measured */ double MOS6latDiff; double MOS6jctSatCurDensity; /* input - use tSatCurDens */ double MOS6jctSatCur; /* input - use tSatCur */ double MOS6drainResistance; double MOS6sourceResistance; double MOS6sheetResistance; double MOS6kv; /* input - use tKv */ double MOS6nv; /* drain linear conductance factor*/ double MOS6kc; /* input - use tKc */ double MOS6nc; /* saturation current coeff.*/ double MOS6nvth; /* threshold voltage coeff.*/ double MOS6ps; /* saturation current modification parameter*/ double MOS6gateSourceOverlapCapFactor; double MOS6gateDrainOverlapCapFactor; double MOS6gateBulkOverlapCapFactor; double MOS6oxideCapFactor; double MOS6vt0; /* input - use tVto */ double MOS6capBD; /* input - use tCbd */ double MOS6capBS; /* input - use tCbs */ double MOS6bulkCapFactor; /* input - use tCj */ double MOS6sideWallCapFactor; /* input - use tCjsw */ double MOS6bulkJctPotential; /* input - use tBulkPot */ double MOS6bulkJctBotGradingCoeff; double MOS6bulkJctSideGradingCoeff; double MOS6fwdCapDepCoeff; double MOS6phi; /* input - use tPhi */ double MOS6gamma; double MOS6gamma1; /* secondary back-gate effect parametr */ double MOS6sigma; double MOS6lambda; double MOS6lamda0; double MOS6lamda1; double MOS6substrateDoping; int MOS6gateType; double MOS6surfaceStateDensity; double MOS6oxideThickness; double MOS6surfaceMobility; /* input - use tSurfMob */ unsigned MOS6typeGiven :1; unsigned MOS6latDiffGiven :1; unsigned MOS6jctSatCurDensityGiven :1; unsigned MOS6jctSatCurGiven :1; unsigned MOS6drainResistanceGiven :1; unsigned MOS6sourceResistanceGiven :1; unsigned MOS6sheetResistanceGiven :1; unsigned MOS6kvGiven :1; unsigned MOS6nvGiven :1; unsigned MOS6kcGiven :1; unsigned MOS6ncGiven :1; unsigned MOS6nvthGiven :1; unsigned MOS6psGiven :1; unsigned MOS6gateSourceOverlapCapFactorGiven :1; unsigned MOS6gateDrainOverlapCapFactorGiven :1; unsigned MOS6gateBulkOverlapCapFactorGiven :1; unsigned MOS6vt0Given :1; unsigned MOS6capBDGiven :1; unsigned MOS6capBSGiven :1; unsigned MOS6bulkCapFactorGiven :1; unsigned MOS6sideWallCapFactorGiven :1; unsigned MOS6bulkJctPotentialGiven :1; unsigned MOS6bulkJctBotGradingCoeffGiven :1; unsigned MOS6bulkJctSideGradingCoeffGiven :1; unsigned MOS6fwdCapDepCoeffGiven :1; unsigned MOS6phiGiven :1; unsigned MOS6gammaGiven :1; unsigned MOS6gamma1Given :1; unsigned MOS6sigmaGiven :1; unsigned MOS6lambdaGiven :1; unsigned MOS6lamda0Given :1; unsigned MOS6lamda1Given :1; unsigned MOS6substrateDopingGiven :1; unsigned MOS6gateTypeGiven :1; unsigned MOS6surfaceStateDensityGiven :1; unsigned MOS6oxideThicknessGiven :1; unsigned MOS6surfaceMobilityGiven :1; unsigned MOS6tnomGiven :1; } MOS6model; #ifndef NMOS #define NMOS 1 #define PMOS -1 #endif /*NMOS*/ /* device parameters */ #define MOS6_W 1 #define MOS6_L 2 #define MOS6_AS 3 #define MOS6_AD 4 #define MOS6_PS 5 #define MOS6_PD 6 #define MOS6_NRS 7 #define MOS6_NRD 8 #define MOS6_OFF 9 #define MOS6_IC 10 #define MOS6_IC_VBS 11 #define MOS6_IC_VDS 12 #define MOS6_IC_VGS 13 #define MOS6_W_SENS 14 #define MOS6_L_SENS 15 #define MOS6_CB 16 #define MOS6_CG 17 #define MOS6_CS 18 #define MOS6_POWER 19 #define MOS6_TEMP 20 #define MOS6_DTEMP 21 #define MOS6_M 22 /* model paramerers */ #define MOS6_MOD_VTO 101 #define MOS6_MOD_KV 102 #define MOS6_MOD_NV 103 #define MOS6_MOD_KC 104 #define MOS6_MOD_NC 105 #define MOS6_MOD_NVTH 106 #define MOS6_MOD_PS 107 #define MOS6_MOD_GAMMA 108 #define MOS6_MOD_GAMMA1 109 #define MOS6_MOD_SIGMA 110 #define MOS6_MOD_PHI 111 #define MOS6_MOD_LAMBDA 112 #define MOS6_MOD_LAMDA0 113 #define MOS6_MOD_LAMDA1 114 #define MOS6_MOD_RD 115 #define MOS6_MOD_RS 116 #define MOS6_MOD_CBD 117 #define MOS6_MOD_CBS 118 #define MOS6_MOD_IS 119 #define MOS6_MOD_PB 120 #define MOS6_MOD_CGSO 121 #define MOS6_MOD_CGDO 122 #define MOS6_MOD_CGBO 123 #define MOS6_MOD_CJ 124 #define MOS6_MOD_MJ 125 #define MOS6_MOD_CJSW 126 #define MOS6_MOD_MJSW 127 #define MOS6_MOD_JS 128 #define MOS6_MOD_TOX 129 #define MOS6_MOD_LD 130 #define MOS6_MOD_RSH 131 #define MOS6_MOD_U0 132 #define MOS6_MOD_FC 133 #define MOS6_MOD_NSUB 134 #define MOS6_MOD_TPG 135 #define MOS6_MOD_NSS 136 #define MOS6_MOD_NMOS 137 #define MOS6_MOD_PMOS 138 #define MOS6_MOD_TNOM 139 #define MOS6_MOD_TYPE 140 /* device questions */ #define MOS6_CGS 201 #define MOS6_CGD 202 #define MOS6_DNODE 203 #define MOS6_GNODE 204 #define MOS6_SNODE 205 #define MOS6_BNODE 206 #define MOS6_DNODEPRIME 207 #define MOS6_SNODEPRIME 208 #define MOS6_SOURCECONDUCT 209 #define MOS6_DRAINCONDUCT 210 #define MOS6_VON 211 #define MOS6_VDSAT 212 #define MOS6_SOURCEVCRIT 213 #define MOS6_DRAINVCRIT 214 #define MOS6_CD 215 #define MOS6_CBS 216 #define MOS6_CBD 217 #define MOS6_GMBS 218 #define MOS6_GM 219 #define MOS6_GDS 220 #define MOS6_GBD 221 #define MOS6_GBS 222 #define MOS6_CAPBD 223 #define MOS6_CAPBS 224 #define MOS6_CAPZEROBIASBD 225 #define MOS6_CAPZEROBIASBDSW 226 #define MOS6_CAPZEROBIASBS 227 #define MOS6_CAPZEROBIASBSSW 228 #define MOS6_VBD 229 #define MOS6_VBS 230 #define MOS6_VGS 231 #define MOS6_VDS 232 #define MOS6_CAPGS 233 #define MOS6_QGS 234 #define MOS6_CQGS 235 #define MOS6_CAPGD 236 #define MOS6_QGD 237 #define MOS6_CQGD 238 #define MOS6_CAPGB 239 #define MOS6_QGB 240 #define MOS6_CQGB 241 #define MOS6_QBD 242 #define MOS6_CQBD 243 #define MOS6_QBS 244 #define MOS6_CQBS 245 #define MOS6_L_SENS_REAL 246 #define MOS6_L_SENS_IMAG 247 #define MOS6_L_SENS_MAG 248 #define MOS6_L_SENS_PH 249 #define MOS6_L_SENS_CPLX 250 #define MOS6_W_SENS_REAL 251 #define MOS6_W_SENS_IMAG 252 #define MOS6_W_SENS_MAG 253 #define MOS6_W_SENS_PH 254 #define MOS6_W_SENS_CPLX 255 #define MOS6_L_SENS_DC 256 #define MOS6_W_SENS_DC 257 #define MOS6_SOURCERESIST 258 #define MOS6_DRAINRESIST 259 /* model questions */ #include "mos6ext.h" #endif /*MOS6*/