/********** Copyright 1990 Regents of the University of California. All rights reserved. Author: 1987 Thomas L. Quarles Modified: Alan Gillespie **********/ #include "ngspice/ngspice.h" #include "ngspice/devdefs.h" #include "ngspice/ifsim.h" #include "mos9defs.h" #include "ngspice/suffix.h" IFparm MOS9pTable[] = { /* parameters */ IOPU("m", MOS9_M, IF_REAL , "Multiplier"), IOPU("l", MOS9_L, IF_REAL , "Length"), IOPU("w", MOS9_W, IF_REAL , "Width"), IOPU("ad", MOS9_AD, IF_REAL , "Drain area"), IOPU("as", MOS9_AS, IF_REAL , "Source area"), IOPU("pd", MOS9_PD, IF_REAL , "Drain perimeter"), IOPU("ps", MOS9_PS, IF_REAL , "Source perimeter"), OP("id", MOS9_CD, IF_REAL, "Drain current"), OPR("cd", MOS9_CD, IF_REAL, "Drain current"), OPU("ibd", MOS9_CBD, IF_REAL, "B-D junction current"), OPU("ibs", MOS9_CBS, IF_REAL, "B-S junction current"), OPU("is", MOS9_CS, IF_REAL, "Source current"), OPU("ig", MOS9_CG, IF_REAL, "Gate current"), OPU("ib", MOS9_CB, IF_REAL, "Bulk current"), OP("vgs", MOS9_VGS, IF_REAL, "Gate-Source voltage"), OP("vds", MOS9_VDS, IF_REAL, "Drain-Source voltage"), OP("vbs", MOS9_VBS, IF_REAL, "Bulk-Source voltage"), OPU("vbd", MOS9_VBD, IF_REAL, "Bulk-Drain voltage"), IOPU("nrd", MOS9_NRD, IF_REAL , "Drain squares"), IOPU("nrs", MOS9_NRS, IF_REAL , "Source squares"), IP("off", MOS9_OFF, IF_FLAG , "Device initially off"), IOPAU("icvds", MOS9_IC_VDS, IF_REAL , "Initial D-S voltage"), IOPAU("icvgs", MOS9_IC_VGS, IF_REAL , "Initial G-S voltage"), IOPAU("icvbs", MOS9_IC_VBS, IF_REAL , "Initial B-S voltage"), IOPU("ic", MOS9_IC, IF_REALVEC, "Vector of D-S, G-S, B-S voltages"), IOPU("temp", MOS9_TEMP, IF_REAL , "Instance operating temperature"), IOPU("dtemp", MOS9_DTEMP, IF_REAL , "Instance operating temperature difference"), IP("sens_l", MOS9_L_SENS, IF_FLAG, "flag to request sensitivity WRT length"), IP("sens_w", MOS9_W_SENS, IF_FLAG, "flag to request sensitivity WRT width"), OPU("dnode", MOS9_DNODE, IF_INTEGER, "Number of drain node"), OPU("gnode", MOS9_GNODE, IF_INTEGER, "Number of gate node"), OPU("snode", MOS9_SNODE, IF_INTEGER, "Number of source node"), OPU("bnode", MOS9_BNODE, IF_INTEGER, "Number of bulk node"), OPU("dnodeprime", MOS9_DNODEPRIME,IF_INTEGER,"Number of internal drain node"), OPU("snodeprime", MOS9_SNODEPRIME,IF_INTEGER,"Number of internal source node"), OP("von", MOS9_VON, IF_REAL, "Turn-on voltage"), OP("vdsat", MOS9_VDSAT, IF_REAL, "Saturation drain voltage"), OPU("sourcevcrit", MOS9_SOURCEVCRIT, IF_REAL, "Critical source voltage"), OPU("drainvcrit", MOS9_DRAINVCRIT, IF_REAL, "Critical drain voltage"), OP("rs", MOS9_SOURCERESIST, IF_REAL, "Source resistance"), OPU("sourceconductance", MOS9_SOURCECONDUCT, IF_REAL, "Source conductance"), OP("rd", MOS9_DRAINRESIST, IF_REAL, "Drain resistance"), OPU("drainconductance", MOS9_DRAINCONDUCT, IF_REAL, "Drain conductance"), OP("gm", MOS9_GM, IF_REAL, "Transconductance"), OP("gds", MOS9_GDS, IF_REAL, "Drain-Source conductance"), OP("gmb", MOS9_GMBS, IF_REAL, "Bulk-Source transconductance"), OPR("gmbs", MOS9_GMBS, IF_REAL, "Bulk-Source transconductance"), OPU("gbd", MOS9_GBD, IF_REAL, "Bulk-Drain conductance"), OPU("gbs", MOS9_GBS, IF_REAL, "Bulk-Source conductance"), OP("cbd", MOS9_CAPBD, IF_REAL, "Bulk-Drain capacitance"), OP("cbs", MOS9_CAPBS, IF_REAL, "Bulk-Source capacitance"), OP("cgs", MOS9_CAPGS, IF_REAL, "Gate-Source capacitance"), /* OPR("cgs", MOS9_CGS, IF_REAL , "Gate-Source capacitance"),*/ OP("cgd", MOS9_CAPGD, IF_REAL, "Gate-Drain capacitance"), /* OPR("cgd", MOS9_CGD, IF_REAL , "Gate-Drain capacitance"),*/ OP("cgb", MOS9_CAPGB, IF_REAL, "Gate-Bulk capacitance"), OPU("cqgs",MOS9_CQGS,IF_REAL,"Capacitance due to gate-source charge storage"), OPU("cqgd",MOS9_CQGD, IF_REAL,"Capacitance due to gate-drain charge storage"), OPU("cqgb",MOS9_CQGB, IF_REAL,"Capacitance due to gate-bulk charge storage"), OPU("cqbd",MOS9_CQBD,IF_REAL,"Capacitance due to bulk-drain charge storage"), OPU("cqbs",MOS9_CQBS,IF_REAL,"Capacitance due to bulk-source charge storage"), OPU("cbd0",MOS9_CAPZEROBIASBD,IF_REAL,"Zero-Bias B-D junction capacitance"), OPU("cbdsw0",MOS9_CAPZEROBIASBDSW,IF_REAL, "Zero-Bias B-D sidewall capacitance"), OPU("cbs0",MOS9_CAPZEROBIASBS,IF_REAL,"Zero-Bias B-S junction capacitance"), OPU("cbssw0",MOS9_CAPZEROBIASBSSW,IF_REAL, "Zero-Bias B-S sidewall capacitance"), OPU("qbs", MOS9_QBS, IF_REAL, "Bulk-Source charge storage"), OPU("qgs", MOS9_QGS, IF_REAL, "Gate-Source charge storage"), OPU("qgd", MOS9_QGD, IF_REAL, "Gate-Drain charge storage"), OPU("qgb", MOS9_QGB, IF_REAL, "Gate-Bulk charge storage"), OPU("qbd", MOS9_QBD, IF_REAL, "Bulk-Drain charge storage"), OPU("p", MOS9_POWER, IF_REAL, "Instantaneous power"), OPU("sens_l_dc", MOS9_L_SENS_DC, IF_REAL, "dc sensitivity wrt length"), OPU("sens_l_real",MOS9_L_SENS_REAL, IF_REAL, "real part of ac sensitivity wrt length"), OPU("sens_l_imag",MOS9_L_SENS_IMAG, IF_REAL, "imag part of ac sensitivity wrt length"), OPU("sens_l_cplx",MOS9_L_SENS_CPLX, IF_COMPLEX, "ac sensitivity wrt length"), OPU("sens_l_mag", MOS9_L_SENS_MAG, IF_REAL, "sensitivity wrt l of ac magnitude"), OPU("sens_l_ph", MOS9_L_SENS_PH, IF_REAL, "sensitivity wrt l of ac phase"), OPU("sens_w_dc", MOS9_W_SENS_DC, IF_REAL, "dc sensitivity wrt width"), OPU("sens_w_real",MOS9_W_SENS_REAL, IF_REAL, "real part of ac sensitivity wrt width"), OPU("sens_w_imag",MOS9_W_SENS_IMAG, IF_REAL, "imag part of ac sensitivity wrt width"), OPU("sens_w_mag", MOS9_W_SENS_MAG, IF_REAL, "sensitivity wrt w of ac magnitude"), OPU("sens_w_ph", MOS9_W_SENS_PH, IF_REAL, "sensitivity wrt w of ac phase"), OPU("sens_w_cplx",MOS9_W_SENS_CPLX, IF_COMPLEX, "ac sensitivity wrt width") }; IFparm MOS9mPTable[] = { /* model parameters */ OP("type", MOS9_MOD_TYPE, IF_STRING ,"N-channel or P-channel MOS"), IP("nmos", MOS9_MOD_NMOS, IF_FLAG ,"N type MOSfet model"), IP("pmos", MOS9_MOD_PMOS, IF_FLAG ,"P type MOSfet model"), IOP("vto", MOS9_MOD_VTO, IF_REAL ,"Threshold voltage"), IOPR("vt0", MOS9_MOD_VTO, IF_REAL ,"Threshold voltage"), IOP("kp", MOS9_MOD_KP, IF_REAL ,"Transconductance parameter"), IOP("gamma", MOS9_MOD_GAMMA, IF_REAL ,"Bulk threshold parameter"), IOP("phi", MOS9_MOD_PHI, IF_REAL ,"Surface potential"), IOP("rd", MOS9_MOD_RD, IF_REAL ,"Drain ohmic resistance"), IOP("rs", MOS9_MOD_RS, IF_REAL ,"Source ohmic resistance"), IOPA("cbd", MOS9_MOD_CBD, IF_REAL ,"B-D junction capacitance"), IOPA("cbs", MOS9_MOD_CBS, IF_REAL ,"B-S junction capacitance"), IOP("is", MOS9_MOD_IS, IF_REAL ,"Bulk junction sat. current"), IOP("pb", MOS9_MOD_PB, IF_REAL ,"Bulk junction potential"), IOPA("cgso", MOS9_MOD_CGSO, IF_REAL ,"Gate-source overlap cap."), IOPA("cgdo", MOS9_MOD_CGDO, IF_REAL ,"Gate-drain overlap cap."), IOPA("cgbo", MOS9_MOD_CGBO, IF_REAL ,"Gate-bulk overlap cap."), IOP("rsh", MOS9_MOD_RSH, IF_REAL ,"Sheet resistance"), IOPA("cj", MOS9_MOD_CJ, IF_REAL ,"Bottom junction cap per area"), IOP("mj", MOS9_MOD_MJ, IF_REAL ,"Bottom grading coefficient"), IOPA("cjsw", MOS9_MOD_CJSW, IF_REAL ,"Side junction cap per area"), IOP("mjsw", MOS9_MOD_MJSW, IF_REAL ,"Side grading coefficient"), IOPU("js", MOS9_MOD_JS, IF_REAL ,"Bulk jct. sat. current density"), IOP("tox", MOS9_MOD_TOX, IF_REAL ,"Oxide thickness"), IOP("ld", MOS9_MOD_LD, IF_REAL ,"Lateral diffusion"), IOP("xl", MOS9_MOD_XL, IF_REAL ,"Length mask adjustment"), IOP("wd", MOS9_MOD_WD, IF_REAL ,"Width Narrowing (Diffusion)"), IOP("xw", MOS9_MOD_XW, IF_REAL ,"Width mask adjustment"), IOPU("delvto", MOS9_MOD_DELVTO, IF_REAL ,"Threshold voltage Adjust"), IOPR("delvt0", MOS9_MOD_DELVTO, IF_REAL ,"Threshold voltage Adjust"), IOP("u0", MOS9_MOD_U0, IF_REAL ,"Surface mobility"), IOPR("uo", MOS9_MOD_U0, IF_REAL ,"Surface mobility"), IOP("fc", MOS9_MOD_FC, IF_REAL ,"Forward bias jct. fit parm."), IOP("nsub", MOS9_MOD_NSUB, IF_REAL ,"Substrate doping"), IOP("tpg", MOS9_MOD_TPG, IF_INTEGER,"Gate type"), IOP("nss", MOS9_MOD_NSS, IF_REAL ,"Surface state density"), IOP("vmax", MOS9_MOD_VMAX, IF_REAL ,"Maximum carrier drift velocity"), IOP("xj", MOS9_MOD_XJ, IF_REAL ,"Junction depth"), IOP("nfs", MOS9_MOD_NFS, IF_REAL ,"Fast surface state density"), IOP("xd", MOS9_MOD_XD, IF_REAL ,"Depletion layer width"), IOP("alpha", MOS9_MOD_ALPHA, IF_REAL ,"Alpha"), IOP("eta", MOS9_MOD_ETA, IF_REAL ,"Vds dependence of threshold voltage"), IOP("delta", MOS9_MOD_DELTA, IF_REAL ,"Width effect on threshold"), IOPR("input_delta", MOS9_DELTA, IF_REAL ,""), IOP("theta", MOS9_MOD_THETA, IF_REAL ,"Vgs dependence on mobility"), IOP("kappa", MOS9_MOD_KAPPA, IF_REAL ,"Kappa"), IOPU("tnom", MOS9_MOD_TNOM, IF_REAL ,"Parameter measurement temperature"), IOP("kf", MOS9_MOD_KF, IF_REAL ,"Flicker noise coefficient"), IOP("af", MOS9_MOD_AF, IF_REAL ,"Flicker noise exponent") }; char *MOS9names[] = { "Drain", "Gate", "Source", "Bulk" }; int MOS9nSize = NUMELEMS(MOS9names); int MOS9pTSize = NUMELEMS(MOS9pTable); int MOS9mPTSize = NUMELEMS(MOS9mPTable); int MOS9iSize = sizeof(MOS9instance); int MOS9mSize = sizeof(MOS9model);