/********** Copyright 1990 Regents of the University of California. All rights reserved. Author: 1985 Thomas L. Quarles Modified: Alan Gillespie **********/ #ifndef MOS9 #define MOS9 #include "ngspice/ifsim.h" #include "ngspice/cktdefs.h" #include "ngspice/gendefs.h" #include "ngspice/complex.h" #include "ngspice/noisedef.h" /* declarations for level 9 MOSFETs */ /* information needed for each instance */ typedef struct sMOS9instance { struct sMOS9model *MOS9modPtr; /* backpointer to model */ struct sMOS9instance *MOS9nextInstance; /* pointer to next instance of *current model*/ IFuid MOS9name; /* pointer to character string naming this instance */ int MOS9states; /* index into state table for this device */ int MOS9dNode; /* number of the gate node of the mosfet */ int MOS9gNode; /* number of the gate node of the mosfet */ int MOS9sNode; /* number of the source node of the mosfet */ int MOS9bNode; /* number of the bulk node of the mosfet */ int MOS9dNodePrime; /* number of the internal drain node of the mosfet */ int MOS9sNodePrime; /* number of the internal source node of the mosfet */ double MOS9m; /* parallel device multiplier */ double MOS9l; /* the length of the channel region */ double MOS9w; /* the width of the channel region */ double MOS9drainArea; /* the area of the drain diffusion */ double MOS9sourceArea; /* the area of the source diffusion */ double MOS9drainSquares; /* the length of the drain in squares */ double MOS9sourceSquares; /* the length of the source in squares */ double MOS9drainPerimiter; double MOS9sourcePerimiter; double MOS9sourceConductance; /*conductance of source(or 0):set in setup*/ double MOS9drainConductance; /*conductance of drain(or 0):set in setup*/ double MOS9temp; /* operating temperature of this instance */ double MOS9dtemp; /* instance temperature difference */ double MOS9tTransconductance; /* temperature corrected transconductance*/ double MOS9tSurfMob; /* temperature corrected surface mobility */ double MOS9tPhi; /* temperature corrected Phi */ double MOS9tVto; /* temperature corrected Vto */ double MOS9tSatCur; /* temperature corrected saturation Cur. */ double MOS9tSatCurDens; /* temperature corrected saturation Cur. density*/ double MOS9tCbd; /* temperature corrected B-D Capacitance */ double MOS9tCbs; /* temperature corrected B-S Capacitance */ double MOS9tCj; /* temperature corrected Bulk bottom Capacitance */ double MOS9tCjsw; /* temperature corrected Bulk side Capacitance */ double MOS9tBulkPot; /* temperature corrected Bulk potential */ double MOS9tDepCap; /* temperature adjusted transition point in */ /* the cureve matching Fc * Vj */ double MOS9tVbi; /* temperature adjusted Vbi */ double MOS9icVBS; /* initial condition B-S voltage */ double MOS9icVDS; /* initial condition D-S voltage */ double MOS9icVGS; /* initial condition G-S voltage */ double MOS9von; double MOS9vdsat; double MOS9sourceVcrit; /* vcrit for pos. vds */ double MOS9drainVcrit; /* vcrit for neg. vds */ double MOS9cd; double MOS9cbs; double MOS9cbd; double MOS9gmbs; double MOS9gm; double MOS9gds; double MOS9gbd; double MOS9gbs; double MOS9capbd; double MOS9capbs; double MOS9Cbd; double MOS9Cbdsw; double MOS9Cbs; double MOS9Cbssw; double MOS9f2d; double MOS9f3d; double MOS9f4d; double MOS9f2s; double MOS9f3s; double MOS9f4s; int MOS9mode; /* device mode : 1 = normal, -1 = inverse */ unsigned MOS9off :1;/* non-zero to indicate device is off for dc analysis*/ unsigned MOS9tempGiven :1; /* instance temperature specified */ unsigned MOS9dtempGiven :1; /* instance temperature difference specified*/ unsigned MOS9mGiven :1; unsigned MOS9lGiven :1; unsigned MOS9wGiven :1; unsigned MOS9drainAreaGiven :1; unsigned MOS9sourceAreaGiven :1; unsigned MOS9drainSquaresGiven :1; unsigned MOS9sourceSquaresGiven :1; unsigned MOS9drainPerimiterGiven :1; unsigned MOS9sourcePerimiterGiven :1; unsigned MOS9dNodePrimeSet :1; unsigned MOS9sNodePrimeSet :1; unsigned MOS9icVBSGiven :1; unsigned MOS9icVDSGiven :1; unsigned MOS9icVGSGiven :1; unsigned MOS9vonGiven :1; unsigned MOS9vdsatGiven :1; unsigned MOS9modeGiven :1; double *MOS9DdPtr; /* pointer to sparse matrix element at * (Drain node,drain node) */ double *MOS9GgPtr; /* pointer to sparse matrix element at * (gate node,gate node) */ double *MOS9SsPtr; /* pointer to sparse matrix element at * (source node,source node) */ double *MOS9BbPtr; /* pointer to sparse matrix element at * (bulk node,bulk node) */ double *MOS9DPdpPtr; /* pointer to sparse matrix element at * (drain prime node,drain prime node) */ double *MOS9SPspPtr; /* pointer to sparse matrix element at * (source prime node,source prime node) */ double *MOS9DdpPtr; /* pointer to sparse matrix element at * (drain node,drain prime node) */ double *MOS9GbPtr; /* pointer to sparse matrix element at * (gate node,bulk node) */ double *MOS9GdpPtr; /* pointer to sparse matrix element at * (gate node,drain prime node) */ double *MOS9GspPtr; /* pointer to sparse matrix element at * (gate node,source prime node) */ double *MOS9SspPtr; /* pointer to sparse matrix element at * (source node,source prime node) */ double *MOS9BdpPtr; /* pointer to sparse matrix element at * (bulk node,drain prime node) */ double *MOS9BspPtr; /* pointer to sparse matrix element at * (bulk node,source prime node) */ double *MOS9DPspPtr; /* pointer to sparse matrix element at * (drain prime node,source prime node) */ double *MOS9DPdPtr; /* pointer to sparse matrix element at * (drain prime node,drain node) */ double *MOS9BgPtr; /* pointer to sparse matrix element at * (bulk node,gate node) */ double *MOS9DPgPtr; /* pointer to sparse matrix element at * (drain prime node,gate node) */ double *MOS9SPgPtr; /* pointer to sparse matrix element at * (source prime node,gate node) */ double *MOS9SPsPtr; /* pointer to sparse matrix element at * (source prime node,source node) */ double *MOS9DPbPtr; /* pointer to sparse matrix element at * (drain prime node,bulk node) */ double *MOS9SPbPtr; /* pointer to sparse matrix element at * (source prime node,bulk node) */ double *MOS9SPdpPtr; /* pointer to sparse matrix element at * (source prime node,drain prime node) */ int MOS9senParmNo; /* parameter # for sensitivity use; set equal to 0 if neither length nor width of the mosfet is a design parameter */ unsigned MOS9sens_l :1; /* field which indicates whether length of the mosfet is a design parameter or not */ unsigned MOS9sens_w :1; /* field which indicates whether width of the mosfet is a design parameter or not */ unsigned MOS9senPertFlag :1; /* indictes whether the the parameter of the particular instance is to be perturbed */ double MOS9cgs; double MOS9cgd; double MOS9cgb; double *MOS9sens; #define MOS9senGdpr MOS9sens #define MOS9senGspr MOS9sens + 1 #define MOS9senCgs MOS9sens + 2 /* contains pertured values of cgs */ #define MOS9senCgd MOS9sens + 8 /* contains perturbed values of cgd*/ #define MOS9senCgb MOS9sens + 14 /* contains perturbed values of cgb*/ #define MOS9senCbd MOS9sens + 20 /* contains perturbed values of cbd*/ #define MOS9senCbs MOS9sens + 26 /* contains perturbed values of cbs*/ #define MOS9senGds MOS9sens + 32 /* contains perturbed values of gds*/ #define MOS9senGbs MOS9sens + 38 /* contains perturbed values of gbs*/ #define MOS9senGbd MOS9sens + 44 /* contains perturbed values of gbd*/ #define MOS9senGm MOS9sens + 50 /* contains perturbed values of gm*/ #define MOS9senGmbs MOS9sens + 56 /* contains perturbed values of gmbs*/ #define MOS9dphigs_dl MOS9sens + 62 #define MOS9dphigd_dl MOS9sens + 63 #define MOS9dphigb_dl MOS9sens + 64 #define MOS9dphibs_dl MOS9sens + 65 #define MOS9dphibd_dl MOS9sens + 66 #define MOS9dphigs_dw MOS9sens + 67 #define MOS9dphigd_dw MOS9sens + 68 #define MOS9dphigb_dw MOS9sens + 69 #define MOS9dphibs_dw MOS9sens + 70 #define MOS9dphibd_dw MOS9sens + 71 /* distortion stuff */ /* * naming convention: * x = vgs * y = vbs * z = vds * cdr = cdrain */ #define MOS9NDCOEFFS 30 #ifndef NODISTO double MOS9dCoeffs[MOS9NDCOEFFS]; #else /* NODISTO */ double *MOS9dCoeffs; #endif /* NODISTO */ #ifndef CONFIG #define capbs2 MOS9dCoeffs[0] #define capbs3 MOS9dCoeffs[1] #define capbd2 MOS9dCoeffs[2] #define capbd3 MOS9dCoeffs[3] #define gbs2 MOS9dCoeffs[4] #define gbs3 MOS9dCoeffs[5] #define gbd2 MOS9dCoeffs[6] #define gbd3 MOS9dCoeffs[7] #define capgb2 MOS9dCoeffs[8] #define capgb3 MOS9dCoeffs[9] #define cdr_x2 MOS9dCoeffs[10] #define cdr_y2 MOS9dCoeffs[11] #define cdr_z2 MOS9dCoeffs[12] #define cdr_xy MOS9dCoeffs[13] #define cdr_yz MOS9dCoeffs[14] #define cdr_xz MOS9dCoeffs[15] #define cdr_x3 MOS9dCoeffs[16] #define cdr_y3 MOS9dCoeffs[17] #define cdr_z3 MOS9dCoeffs[18] #define cdr_x2z MOS9dCoeffs[19] #define cdr_x2y MOS9dCoeffs[20] #define cdr_y2z MOS9dCoeffs[21] #define cdr_xy2 MOS9dCoeffs[22] #define cdr_xz2 MOS9dCoeffs[23] #define cdr_yz2 MOS9dCoeffs[24] #define cdr_xyz MOS9dCoeffs[25] #define capgs2 MOS9dCoeffs[26] #define capgs3 MOS9dCoeffs[27] #define capgd2 MOS9dCoeffs[28] #define capgd3 MOS9dCoeffs[29] #endif /* end distortion coeffs. */ /* indices to the array of MOSFET(3) noise sources */ #define MOS9RDNOIZ 0 #define MOS9RSNOIZ 1 #define MOS9IDNOIZ 2 #define MOS9FLNOIZ 3 #define MOS9TOTNOIZ 4 #define MOS9NSRCS 5 /* the number of MOSFET(9) noise sources */ #ifndef NONOISE double MOS9nVar[NSTATVARS][MOS9NSRCS]; #else /* NONOISE */ double **MOS9nVar; #endif /* NONOISE */ } MOS9instance ; #define MOS9vbd MOS9states+ 0 #define MOS9vbs MOS9states+ 1 #define MOS9vgs MOS9states+ 2 #define MOS9vds MOS9states+ 3 /* meyer capacitances */ #define MOS9capgs MOS9states+ 4 /* gate-source capacitor value */ #define MOS9qgs MOS9states+ 5 /* gate-source capacitor charge */ #define MOS9cqgs MOS9states+ 6 /* gate-source capacitor current */ #define MOS9capgd MOS9states+ 7 /* gate-drain capacitor value */ #define MOS9qgd MOS9states+ 8 /* gate-drain capacitor charge */ #define MOS9cqgd MOS9states+ 9 /* gate-drain capacitor current */ #define MOS9capgb MOS9states+ 10/* gate-bulk capacitor value */ #define MOS9qgb MOS9states+ 11 /* gate-bulk capacitor charge */ #define MOS9cqgb MOS9states+ 12 /* gate-bulk capacitor current */ /* diode capacitances */ #define MOS9qbd MOS9states+ 13 /* bulk-drain capacitor charge */ #define MOS9cqbd MOS9states+ 14 /* bulk-drain capacitor current */ #define MOS9qbs MOS9states+ 15 /* bulk-source capacitor charge */ #define MOS9cqbs MOS9states+ 16 /* bulk-source capacitor current */ #define MOS9NUMSTATES 17 #define MOS9sensxpgs MOS9states+17 /* charge sensitivities and their derivatives +18 for the derivatives - pointer to the beginning of the array */ #define MOS9sensxpgd MOS9states+19 #define MOS9sensxpgb MOS9states+21 #define MOS9sensxpbs MOS9states+23 #define MOS9sensxpbd MOS9states+25 #define MOS9numSenStates 10 /* per model data */ /* NOTE: parameters marked 'input - use xxxx' are paramters for * which a temperature correction is applied in MOS9temp, thus * the MOS9xxxx value in the per-instance structure should be used * instead in all calculations */ typedef struct sMOS9model { /* model structure for a resistor */ int MOS9modType; /* type index of this device type */ struct sMOS9model *MOS9nextModel; /* pointer to next possible model *in linked list */ MOS9instance * MOS9instances; /* pointer to list of instances * that have this model */ IFuid MOS9modName; /* pointer to character string naming this model */ /* --- end of generic struct GENmodel --- */ int MOS9type; /* device type : 1 = nmos, -1 = pmos */ double MOS9tnom; /* temperature at which parameters measured */ double MOS9latDiff; double MOS9lengthAdjust; /* New parm: mask adjustment to length */ double MOS9widthNarrow; /* New parm to reduce effective width */ double MOS9widthAdjust; /* New parm: mask adjustment to width */ double MOS9delvt0; /* New parm: adjustment to calculated vtO */ double MOS9jctSatCurDensity; /* input - use tSatCurDens*/ double MOS9jctSatCur; /* input - use tSatCur instead */ double MOS9drainResistance; double MOS9sourceResistance; double MOS9sheetResistance; double MOS9transconductance; /* input - use tTransconductance */ double MOS9gateSourceOverlapCapFactor; double MOS9gateDrainOverlapCapFactor; double MOS9gateBulkOverlapCapFactor; double MOS9oxideCapFactor; double MOS9vt0; /* input - use tVto */ double MOS9capBD; /* input - use tCbs */ double MOS9capBS; /* input - use tCbd */ double MOS9bulkCapFactor; /* input - use tCj */ double MOS9sideWallCapFactor; /* input - use tCjsw */ double MOS9bulkJctPotential; /* input - use tBulkPot */ double MOS9bulkJctBotGradingCoeff; double MOS9bulkJctSideGradingCoeff; double MOS9fwdCapDepCoeff; double MOS9phi; /* input - use tPhi */ double MOS9gamma; double MOS9substrateDoping; int MOS9gateType; double MOS9surfaceStateDensity; double MOS9oxideThickness; double MOS9surfaceMobility; /* input - use tSurfMob */ double MOS9eta; double MOS9junctionDepth; double MOS9coeffDepLayWidth; /* xd */ double MOS9narrowFactor; /* delta */ double MOS9delta; /* input delta */ double MOS9fastSurfaceStateDensity; /* nfs */ double MOS9theta; /* theta */ double MOS9maxDriftVel; /* vmax */ double MOS9alpha; /* alpha */ double MOS9kappa; /* kappa */ double MOS9fNcoef; double MOS9fNexp; unsigned MOS9typeGiven :1; unsigned MOS9latDiffGiven :1; unsigned MOS9lengthAdjustGiven :1; unsigned MOS9widthNarrowGiven :1; unsigned MOS9widthAdjustGiven :1; unsigned MOS9delvt0Given :1; unsigned MOS9jctSatCurDensityGiven :1; unsigned MOS9jctSatCurGiven :1; unsigned MOS9drainResistanceGiven :1; unsigned MOS9sourceResistanceGiven :1; unsigned MOS9sheetResistanceGiven :1; unsigned MOS9transconductanceGiven :1; unsigned MOS9gateSourceOverlapCapFactorGiven :1; unsigned MOS9gateDrainOverlapCapFactorGiven :1; unsigned MOS9gateBulkOverlapCapFactorGiven :1; unsigned MOS9vt0Given :1; unsigned MOS9capBDGiven :1; unsigned MOS9capBSGiven :1; unsigned MOS9bulkCapFactorGiven :1; unsigned MOS9sideWallCapFactorGiven :1; unsigned MOS9bulkJctPotentialGiven :1; unsigned MOS9bulkJctBotGradingCoeffGiven :1; unsigned MOS9bulkJctSideGradingCoeffGiven :1; unsigned MOS9fwdCapDepCoeffGiven :1; unsigned MOS9phiGiven :1; unsigned MOS9gammaGiven :1; unsigned MOS9substrateDopingGiven :1; unsigned MOS9gateTypeGiven :1; unsigned MOS9surfaceStateDensityGiven :1; unsigned MOS9oxideThicknessGiven :1; unsigned MOS9surfaceMobilityGiven :1; unsigned MOS9etaGiven :1; unsigned MOS9junctionDepthGiven :1; unsigned MOS9deltaGiven :1; /* delta */ unsigned MOS9fastSurfaceStateDensityGiven :1; /* nfs */ unsigned MOS9thetaGiven :1; /* theta */ unsigned MOS9maxDriftVelGiven :1; /* vmax */ unsigned MOS9kappaGiven :1; /* kappa */ unsigned MOS9tnomGiven :1; /* Tnom was given? */ unsigned MOS9fNcoefGiven :1; unsigned MOS9fNexpGiven :1; } MOS9model; #ifndef NMOS #define NMOS 1 #define PMOS -1 #endif /*NMOS*/ /* device parameters */ #define MOS9_W 1 #define MOS9_L 2 #define MOS9_AS 3 #define MOS9_AD 4 #define MOS9_PS 5 #define MOS9_PD 6 #define MOS9_NRS 7 #define MOS9_NRD 8 #define MOS9_OFF 9 #define MOS9_IC 10 #define MOS9_IC_VBS 11 #define MOS9_IC_VDS 12 #define MOS9_IC_VGS 13 #define MOS9_W_SENS 14 #define MOS9_L_SENS 15 #define MOS9_CB 16 #define MOS9_CG 17 #define MOS9_CS 18 #define MOS9_POWER 19 #define MOS9_CGS 20 #define MOS9_CGD 21 #define MOS9_DNODE 22 #define MOS9_GNODE 23 #define MOS9_SNODE 24 #define MOS9_BNODE 25 #define MOS9_DNODEPRIME 26 #define MOS9_SNODEPRIME 27 #define MOS9_SOURCECONDUCT 28 #define MOS9_DRAINCONDUCT 29 #define MOS9_VON 30 #define MOS9_VDSAT 31 #define MOS9_SOURCEVCRIT 32 #define MOS9_DRAINVCRIT 33 #define MOS9_CD 34 #define MOS9_CBS 35 #define MOS9_CBD 36 #define MOS9_GMBS 37 #define MOS9_GM 38 #define MOS9_GDS 39 #define MOS9_GBD 40 #define MOS9_GBS 41 #define MOS9_CAPBD 42 #define MOS9_CAPBS 43 #define MOS9_CAPZEROBIASBD 44 #define MOS9_CAPZEROBIASBDSW 45 #define MOS9_CAPZEROBIASBS 46 #define MOS9_CAPZEROBIASBSSW 47 #define MOS9_VBD 48 #define MOS9_VBS 49 #define MOS9_VGS 50 #define MOS9_VDS 51 #define MOS9_CAPGS 52 #define MOS9_QGS 53 #define MOS9_CQGS 54 #define MOS9_CAPGD 55 #define MOS9_QGD 56 #define MOS9_CQGD 57 #define MOS9_CAPGB 58 #define MOS9_QGB 59 #define MOS9_CQGB 60 #define MOS9_QBD 61 #define MOS9_CQBD 62 #define MOS9_QBS 63 #define MOS9_CQBS 64 #define MOS9_W_SENS_REAL 65 #define MOS9_W_SENS_IMAG 66 #define MOS9_W_SENS_MAG 67 #define MOS9_W_SENS_PH 68 #define MOS9_W_SENS_CPLX 69 #define MOS9_L_SENS_REAL 70 #define MOS9_L_SENS_IMAG 71 #define MOS9_L_SENS_MAG 72 #define MOS9_L_SENS_PH 73 #define MOS9_L_SENS_CPLX 74 #define MOS9_W_SENS_DC 75 #define MOS9_L_SENS_DC 76 #define MOS9_TEMP 77 #define MOS9_SOURCERESIST 78 #define MOS9_DRAINRESIST 79 #define MOS9_M 80 #define MOS9_DTEMP 81 /* model parameters */ #define MOS9_MOD_VTO 101 #define MOS9_MOD_KP 102 #define MOS9_MOD_GAMMA 103 #define MOS9_MOD_PHI 104 #define MOS9_MOD_RD 105 #define MOS9_MOD_RS 106 #define MOS9_MOD_CBD 107 #define MOS9_MOD_CBS 108 #define MOS9_MOD_IS 109 #define MOS9_MOD_PB 110 #define MOS9_MOD_CGSO 111 #define MOS9_MOD_CGDO 112 #define MOS9_MOD_CGBO 113 #define MOS9_MOD_RSH 114 #define MOS9_MOD_CJ 115 #define MOS9_MOD_MJ 116 #define MOS9_MOD_CJSW 117 #define MOS9_MOD_MJSW 118 #define MOS9_MOD_JS 119 #define MOS9_MOD_TOX 120 #define MOS9_MOD_LD 121 #define MOS9_MOD_U0 122 #define MOS9_MOD_FC 123 #define MOS9_MOD_NSUB 124 #define MOS9_MOD_TPG 125 #define MOS9_MOD_NSS 126 #define MOS9_MOD_ETA 127 #define MOS9_MOD_DELTA 128 #define MOS9_MOD_NFS 129 #define MOS9_MOD_THETA 130 #define MOS9_MOD_VMAX 131 #define MOS9_MOD_KAPPA 132 #define MOS9_MOD_NMOS 133 #define MOS9_MOD_PMOS 134 #define MOS9_MOD_XJ 135 #define MOS9_MOD_UEXP 136 #define MOS9_MOD_NEFF 137 #define MOS9_MOD_XD 138 #define MOS9_MOD_ALPHA 139 #define MOS9_DELTA 140 #define MOS9_MOD_TNOM 141 #define MOS9_MOD_KF 142 #define MOS9_MOD_AF 143 #define MOS9_MOD_TYPE 144 #define MOS9_MOD_XL 145 #define MOS9_MOD_WD 146 #define MOS9_MOD_XW 147 #define MOS9_MOD_DELVTO 148 /* device questions */ /* model questions */ #include "mos9ext.h" #endif /*MOS9*/