/********** STAG version 2.7 Copyright 2000 owned by the United Kingdom Secretary of State for Defence acting through the Defence Evaluation and Research Agency. Developed by : Jim Benson, Department of Electronics and Computer Science, University of Southampton, United Kingdom. With help from : Nele D'Halleweyn, Ketan Mistry, Bill Redman-White, and Craig Easson. Based on STAG version 2.1 Developed by : Mike Lee, With help from : Bernard Tenbroek, Bill Redman-White, Mike Uren, Chris Edwards and John Bunyan. Acknowledgements : Rupert Howes and Pete Mole. **********/ /********** Modified by Paolo Nenzi 2002 ngspice integration **********/ #include "ngspice/ngspice.h" #include "ngspice/devdefs.h" #include "ngspice/ifsim.h" #include "soi3defs.h" #include "ngspice/suffix.h" char *SOI3names[] = { "Drain", "Front Gate", "Source", "Back Gate", "Bulk", "Thermal" }; IFparm SOI3pTable[] = { /* parameters */ IOP("l", SOI3_L, IF_REAL, "Length"), IOP("w", SOI3_W, IF_REAL, "Width"), IOP("m", SOI3_M, IF_REAL, "Parallel Multiplier"), IOP("as", SOI3_AS, IF_REAL, "Source area"), IOP("ad", SOI3_AD, IF_REAL, "Drain area"), IOP("ab", SOI3_AB, IF_REAL, "Body area"), IOP("nrd", SOI3_NRD, IF_REAL, "Drain squares"), IOP("nrs", SOI3_NRS, IF_REAL, "Source squares"), IP("off", SOI3_OFF, IF_FLAG, "Device initially off"), IOP("icvds", SOI3_IC_VDS, IF_REAL, "Initial D-S voltage"), IOP("icvgfs", SOI3_IC_VGFS, IF_REAL, "Initial GF-S voltage"), IOP("icvgbs", SOI3_IC_VGBS, IF_REAL, "Initial GB-S voltage"), IOP("icvbs", SOI3_IC_VBS, IF_REAL, "Initial B-S voltage"), IOP("temp", SOI3_TEMP, IF_REAL, "Instance temperature"), IOP("rt", SOI3_RT, IF_REAL, "Instance Lumped Thermal Resistance"), IOP("ct", SOI3_CT, IF_REAL, "Instance Lumped Thermal Capacitance"), IOP("rt1", SOI3_RT1, IF_REAL, "Second Thermal Resistance"), IOP("ct1", SOI3_CT1, IF_REAL, "Second Thermal Capacitance"), IOP("rt2", SOI3_RT2, IF_REAL, "Third Thermal Resistance"), IOP("ct2", SOI3_CT2, IF_REAL, "Third Thermal Capacitance"), IOP("rt3", SOI3_RT3, IF_REAL, "Fourth Thermal Resistance"), IOP("ct3", SOI3_CT3, IF_REAL, "Fourth Thermal Capacitance"), IOP("rt4", SOI3_RT4, IF_REAL, "Fifth Thermal Resistance"), IOP("ct4", SOI3_CT4, IF_REAL, "Fifth Thermal Capacitance"), IP( "ic", SOI3_IC, IF_REALVEC,"Vector of D-S, GF-S, GB-S, B-S voltages"), /* IP( "sens_l", SOI3_L_SENS, IF_FLAG, "flag to request sensitivity WRT length"), IP( "sens_w", SOI3_W_SENS, IF_FLAG, "flag to request sensitivity WRT width"),*/ OP( "dnode", SOI3_DNODE, IF_INTEGER, "Number of the drain node "), OP( "gfnode", SOI3_GFNODE, IF_INTEGER, "Number of frt. gate node "), OP( "snode", SOI3_SNODE, IF_INTEGER, "Number of the source node "), OP( "gbnode", SOI3_GBNODE, IF_INTEGER, "Number of back gate node "), OP( "bnode", SOI3_BNODE, IF_INTEGER, "Number of the body node "), OP( "dnodeprime", SOI3_DNODEPRIME, IF_INTEGER, "Number of int. drain node"), OP( "snodeprime", SOI3_SNODEPRIME, IF_INTEGER, "Number of int. source node "), OP( "tnode", SOI3_TNODE, IF_INTEGER, "Number of thermal node "), OP( "branch", SOI3_BRANCH, IF_INTEGER, "Number of thermal branch "), OP( "sourceconductance", SOI3_SOURCECONDUCT, IF_REAL, "Conductance of source"), OP( "drainconductance", SOI3_DRAINCONDUCT, IF_REAL, "Conductance of drain"), OP( "von", SOI3_VON, IF_REAL, "Effective Threshold Voltage (von) "), OP( "vfbf", SOI3_VFBF, IF_REAL, "Temperature adjusted flat band voltage"), OP( "vdsat", SOI3_VDSAT, IF_REAL, "Saturation drain voltage"), OP( "sourcevcrit", SOI3_SOURCEVCRIT,IF_REAL, "Critical source voltage"), OP( "drainvcrit", SOI3_DRAINVCRIT, IF_REAL, "Critical drain voltage"), OP( "id", SOI3_ID, IF_REAL, "Drain current"), OP( "ibs", SOI3_IBS, IF_REAL, "B-S junction current"), OP( "ibd", SOI3_IBD, IF_REAL, "B-D junction current"), OP( "gmbs", SOI3_GMBS, IF_REAL, "Bulk-Source transconductance"), OP( "gmf", SOI3_GMF, IF_REAL, "Front transconductance"), OP( "gmb", SOI3_GMB, IF_REAL, "Back transconductance"), OP( "gds", SOI3_GDS, IF_REAL, "Drain-Source conductance"), OP( "gbd", SOI3_GBD, IF_REAL, "Bulk-Drain conductance"), OP( "gbs", SOI3_GBS, IF_REAL, "Bulk-Source conductance"), OP( "capbd", SOI3_CAPBD, IF_REAL, "Bulk-Drain capacitance"), OP( "capbs", SOI3_CAPBS, IF_REAL, "Bulk-Source capacitance"), OP( "cbd0", SOI3_CAPZEROBIASBD, IF_REAL, "Zero-Bias B-D junction capacitance"), OP( "cbs0", SOI3_CAPZEROBIASBS, IF_REAL, "Zero-Bias B-S junction capacitance"), OP( "vbd", SOI3_VBD, IF_REAL, "Bulk-Drain voltage"), OP( "vbs", SOI3_VBS, IF_REAL, "Bulk-Source voltage"), OP( "vgfs", SOI3_VGFS, IF_REAL, "Front gate-Source voltage"), OP( "vgbs", SOI3_VGBS, IF_REAL, "Back gate-Source voltage"), OP( "vds", SOI3_VDS, IF_REAL, "Drain-Source voltage"), OP( "qgf", SOI3_QGF, IF_REAL, "Front Gate charge storage"), OP( "iqgf",SOI3_IQGF,IF_REAL,"Current due to front gate charge storage"), /* OP( "qgb", SOI3_QGB, IF_REAL, "Back Gate charge storage"), OP( "iqgb",SOI3_IQGB,IF_REAL,"Current due to back gate charge storage"), */ OP( "qd", SOI3_QD, IF_REAL, "Drain charge storage"), OP( "iqd",SOI3_IQD,IF_REAL,"Current due to drain charge storage"), OP( "qs", SOI3_QS, IF_REAL, "Source charge storage"), OP( "iqs",SOI3_IQS,IF_REAL,"Current due to source charge storage"), OP( "qbd", SOI3_QBD, IF_REAL, "Bulk-Drain charge storage"), OP( "iqbd",SOI3_IQBD,IF_REAL,"Current due to bulk-drain charge storage"), OP( "qbs", SOI3_QBS, IF_REAL, "Bulk-Source charge storage"), OP( "iqbs",SOI3_IQBS,IF_REAL,"Currnet due to bulk-source charge storage"), /* extra stuff for newer model -msll Jan96 */ OP( "vfbb", SOI3_VFBB, IF_REAL, "Temperature adjusted back flat band voltage") /*, OP( "sens_l_dc", SOI3_L_SENS_DC, IF_REAL, "dc sensitivity wrt length"), OP( "sens_l_real", SOI3_L_SENS_REAL,IF_REAL, "real part of ac sensitivity wrt length"), OP( "sens_l_imag", SOI3_L_SENS_IMAG,IF_REAL, "imag part of ac sensitivity wrt length"), OP( "sens_l_mag", SOI3_L_SENS_MAG, IF_REAL, "sensitivity wrt l of ac magnitude"), OP( "sens_l_ph", SOI3_L_SENS_PH, IF_REAL, "sensitivity wrt l of ac phase"), OP( "sens_l_cplx", SOI3_L_SENS_CPLX,IF_COMPLEX, "ac sensitivity wrt length"), OP( "sens_w_dc", SOI3_W_SENS_DC, IF_REAL, "dc sensitivity wrt width"), OP( "sens_w_real", SOI3_W_SENS_REAL,IF_REAL, "real part of ac sensitivity wrt width"), OP( "sens_w_imag", SOI3_W_SENS_IMAG,IF_REAL, "imag part of ac sensitivity wrt width"), OP( "sens_w_mag", SOI3_W_SENS_MAG, IF_REAL, "sensitivity wrt w of ac magnitude"), OP( "sens_w_ph", SOI3_W_SENS_PH, IF_REAL, "sensitivity wrt w of ac phase"), OP( "sens_w_cplx", SOI3_W_SENS_CPLX,IF_COMPLEX, "ac sensitivity wrt width")*/ }; IFparm SOI3mPTable[] = { /* model parameters */ IOP("vto", SOI3_MOD_VTO, IF_REAL ,"Threshold voltage"), IOP("vt0", SOI3_MOD_VTO, IF_REAL ,"Threshold voltage"), IOP("vfbf", SOI3_MOD_VFBF, IF_REAL ,"Flat band voltage"), IOP("kp", SOI3_MOD_KP, IF_REAL ,"Transconductance parameter"), IOP("gamma", SOI3_MOD_GAMMA, IF_REAL ,"Body Factor"), IOP("phi", SOI3_MOD_PHI, IF_REAL ,"Surface potential"), IOP("lambda",SOI3_MOD_LAMBDA,IF_REAL ,"Channel length modulation"), IOP("theta", SOI3_MOD_THETA, IF_REAL ,"Vertical field mobility degradation"), IOP("rd", SOI3_MOD_RD, IF_REAL ,"Drain ohmic resistance"), IOP("rs", SOI3_MOD_RS, IF_REAL ,"Source ohmic resistance"), IOP("cbd", SOI3_MOD_CBD, IF_REAL ,"B-D junction capacitance"), IOP("cbs", SOI3_MOD_CBS, IF_REAL ,"B-S junction capacitance"), IOP("is", SOI3_MOD_IS, IF_REAL ,"Bulk junction sat. current"), IOP("is1", SOI3_MOD_IS1, IF_REAL ,"2nd Bulk junction sat. current"), IOP("pb", SOI3_MOD_PB, IF_REAL ,"Bulk junction potential"), IOP("cgfso", SOI3_MOD_CGFSO, IF_REAL ,"Front Gate-source overlap cap."), IOP("cgfdo", SOI3_MOD_CGFDO, IF_REAL ,"Front Gate-drain overlap cap."), IOP("cgfbo", SOI3_MOD_CGFBO, IF_REAL ,"Front Gate-bulk overlap cap."), IOP("cgbso", SOI3_MOD_CGBSO, IF_REAL ,"Back Gate-source overlap cap."), IOP("cgbdo", SOI3_MOD_CGBDO, IF_REAL ,"Back Gate-drain overlap cap."), IOP("cgbbo", SOI3_MOD_CGBBO, IF_REAL ,"Back Gate-bulk overlap cap."), IOP("rsh", SOI3_MOD_RSH, IF_REAL ,"Sheet resistance"), IOP("cj", SOI3_MOD_CJSW, IF_REAL ,"Side junction cap per area"), IOP("mj", SOI3_MOD_MJSW, IF_REAL ,"Side grading coefficient"), IOP("js", SOI3_MOD_JS, IF_REAL ,"Bulk jct. sat. current density"), IOP("js1", SOI3_MOD_JS1, IF_REAL ,"2nd Bulk jct. sat. current density"), IOP("tof", SOI3_MOD_TOF, IF_REAL ,"Front Oxide thickness"), IOP("tob", SOI3_MOD_TOB, IF_REAL ,"Back Oxide thickness"), IOP("tb", SOI3_MOD_TB, IF_REAL ,"Bulk film thickness"), IOP("ld", SOI3_MOD_LD, IF_REAL ,"Lateral diffusion"), IOP("u0", SOI3_MOD_U0, IF_REAL ,"Surface mobility"), IOP("uo", SOI3_MOD_U0, IF_REAL ,"Surface mobility"), IOP("fc", SOI3_MOD_FC, IF_REAL ,"Forward bias jct. fit parm."), IP("nsoi", SOI3_MOD_NSOI3, IF_FLAG ,"N type SOI3fet model"), IP("psoi", SOI3_MOD_PSOI3, IF_FLAG ,"P type SOI3fet model"), IOP("kox", SOI3_MOD_KOX, IF_REAL ,"Oxide thermal conductivity"), IOP("shsi", SOI3_MOD_SHSI, IF_REAL ,"Specific heat of silicon"), IOP("dsi", SOI3_MOD_DSI, IF_REAL ,"Density of silicon"), IOP("nsub", SOI3_MOD_NSUB, IF_REAL ,"Substrate doping"), IOP("tpg", SOI3_MOD_TPG, IF_INTEGER,"Gate type"), IOP("nqff", SOI3_MOD_NQFF, IF_REAL ,"Front fixed oxide charge density"), IOP("nqfb", SOI3_MOD_NQFB, IF_REAL ,"Back fixed oxide charge density"), IOP("nssf", SOI3_MOD_NSSF, IF_REAL ,"Front surface state density"), IOP("nssb", SOI3_MOD_NSSB, IF_REAL ,"Back surface state density"), IOP("tnom", SOI3_MOD_TNOM, IF_REAL ,"Parameter measurement temp"), IP("kf", SOI3_MOD_KF, IF_REAL ,"Flicker noise coefficient"), IP("af", SOI3_MOD_AF, IF_REAL ,"Flicker noise exponent"), /* extra stuff for newer model - msll Jan96 */ IOP("sigma", SOI3_MOD_SIGMA, IF_REAL ,"DIBL coefficient"), IOP("chifb", SOI3_MOD_CHIFB, IF_REAL ,"Temperature coeff of flatband voltage"), IOP("chiphi",SOI3_MOD_CHIPHI, IF_REAL ,"Temperature coeff of PHI"), IOP("deltaw",SOI3_MOD_DELTAW,IF_REAL ,"Narrow width factor"), IOP("deltal",SOI3_MOD_DELTAL,IF_REAL ,"Short channel factor"), IOP("vsat", SOI3_MOD_VSAT, IF_REAL ,"Saturation velocity"), IOP("k", SOI3_MOD_K, IF_REAL ,"Thermal exponent"), IOP("lx", SOI3_MOD_LX, IF_REAL ,"Channel length modulation (alternative)"), IOP("vp", SOI3_MOD_VP, IF_REAL ,"Channel length modulation (alt. empirical)"), IOP("eta", SOI3_MOD_ETA, IF_REAL ,"Impact ionization field adjustment factor"), IOP("alpha0",SOI3_MOD_ALPHA0,IF_REAL ,"First impact ionisation coeff (alpha0)"), IOP("beta0", SOI3_MOD_BETA0, IF_REAL ,"Second impact ionisation coeff (beta0)"), IOP("lm", SOI3_MOD_LM, IF_REAL ,"Impact ion. drain region length"), IOP("lm1", SOI3_MOD_LM1, IF_REAL ,"Impact ion. drain region length coeff"), IOP("lm2", SOI3_MOD_LM2, IF_REAL ,"Impact ion. drain region length coeff"), IOP("etad", SOI3_MOD_ETAD, IF_REAL ,"Diode ideality factor"), IOP("etad1", SOI3_MOD_ETAD1, IF_REAL ,"2nd Diode ideality factor"), IOP("chibeta",SOI3_MOD_CHIBETA,IF_REAL ,"Impact ionisation temperature coefficient"), IOP("vfbb", SOI3_MOD_VFBB, IF_REAL ,"Back Flat band voltage"), IOP("gammab",SOI3_MOD_GAMMAB,IF_REAL ,"Back Body Factor"), IOP("chid", SOI3_MOD_CHID, IF_REAL ,"Junction temperature factor"), IOP("chid1", SOI3_MOD_CHID1, IF_REAL ,"2nd Junction temperature factor"), IOP("dvt", SOI3_MOD_DVT, IF_INTEGER,"Switch for temperature dependence of vt in diodes"), IOP("nlev", SOI3_MOD_NLEV, IF_INTEGER,"Level switch for flicker noise model"), IOP("betabjt",SOI3_MOD_BETABJT,IF_REAL ,"Beta for BJT"), IOP("tauf", SOI3_MOD_TAUFBJT,IF_REAL ,"Forward tau for BJT"), IOP("taur", SOI3_MOD_TAURBJT,IF_REAL ,"Reverse tau for BJT"), IOP("betaexp",SOI3_MOD_BETAEXP,IF_REAL ,"Exponent for Beta of BJT"), IOP("tauexp", SOI3_MOD_TAUEXP,IF_REAL, "Exponent for Transit time of BJT"), IOP("rsw", SOI3_MOD_RSW, IF_REAL ,"Source resistance width scaling factor"), IOP("rdw", SOI3_MOD_RDW, IF_REAL ,"Drain resistance width scaling factor"), IOP("fmin", SOI3_MOD_FMIN, IF_REAL ,"Minimum feature size of technology"), IOP("vtex", SOI3_MOD_VTEX, IF_REAL ,"Extracted threshold voltage"), IOP("vdex", SOI3_MOD_VDEX, IF_REAL ,"Drain bias at which vtex extracted"), IOP("delta0",SOI3_MOD_DELTA0,IF_REAL ,"Surface potential factor for vtex conversion"), IOP("csf", SOI3_MOD_CSF ,IF_REAL ,"Saturation region charge sharing factor"), IOP("nplus", SOI3_MOD_NPLUS ,IF_REAL ,"Doping concentration of N+ or P+ regions"), IOP("rta", SOI3_MOD_RTA ,IF_REAL ,"Thermal resistance area scaling factor"), IOP("cta", SOI3_MOD_CTA ,IF_REAL ,"Thermal capacitance area scaling factor"), IOP("mexp", SOI3_MOD_MEXP ,IF_REAL ,"Exponent for CLM smoothing") }; int SOI3nSize = NUMELEMS(SOI3names); int SOI3pTSize = NUMELEMS(SOI3pTable); int SOI3mPTSize = NUMELEMS(SOI3mPTable); int SOI3iSize = sizeof(SOI3instance); int SOI3mSize = sizeof(SOI3model);